FMW3 ROHM | Alldatasheet
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General purpose (dual transistors) FMW3 / FMW4 / IMX8 !!!!Features 1) Two 2SC3906K chips in an SMT package. 2) High breakdown voltage. !!!!Absolute maximum ratings (Ta = 25°C) Parameter Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 120 120 150 −55~+150 Unit V V V mA mW ∗ 300(TOTAL) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature ∗ 200mW per element must not be exceeded. !!!!Package, marking, and packaging specifications FMW3 SMT5 T148 3000 FMW4 SMT5 T148 3000 IMX8 SMT6 T108 3000 Part No. Package Marking Code Basic ordering unit (pieces) !!!!Circuit diagrams FMW3 FMW4 IMX8 !!!!External dimensions (Units : mm) ROHM : SMT5 FMW3 FMW4 EIAJ : SC-74A Each lead has same dimensions 0to0.1 0.8 0.3to0.6 0.15 1.6 2.8 0.95 1.9 (4)(5) (1) 0.3 (3) 0.95 (2) ROHM : SMT6 IMX8 EIAJ : SC-74 Each lead has same dimensions (6)(5)(4) 0.3to0.6 0.15 0.3 1.1 0.8 0to0.1 (3) 2.8 1.6 1.9 2.9 0.95 (2) 0.95 (1) 1.1 2.9 !!!!Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO IEBO hFE 120 120 180 0.5 0.5 820 V V V µA µA Transition frequency fT − 140 − MHz IC=50µA IC=1mA IE=50µA VCB=100V VEB=4V VCE(sat) −− 0.5 V I C/IB=10mA/1mA VCE=6V, IC=2mA VCE=−12V, IE=2mA, f=100MHz ∗Transition frequency of the device Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage