EMX5_1 ROHM | Alldatasheet
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- Manufacturer or author: ROHM CO., LTD.
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Rev.B 1/2 High transition frequency (dual transistors) EMX5 / UMX5N / IMX5 zFeatures 1) Two 2SC3838K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=3.2GHz) 3) Low output capacitance. (Cob=0.9pF) zEquivalent circuits EMX5 / UMX5N (3) (2) (1) (4) (5) (6) IMX5 Tr1 Tr1Tr2Tr2 (4) (5) (6) (3) (2) (1) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 300(TOTAL) 150(TOTAL)EMX5 / UMX5N IMX5 150 −55 to +150 Unit V V V mA mW Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. zPackage, marking, and packaging specifications Type EMX5 EMT5 T2R 8000 IMX5 SMT6 T108 3000 UMX5N UMT6 TR 3000 Package Marking Code Basic ordering unit (pieces) zDimensions (Unit : mm) UMX5N Each lead has same dimensionsROHM : UMT6 EIAJ : SC-88 IMX5 Each lead has same dimensionsROHM : SMT6 EIAJ : SC-74 Each lead has same dimensionsROHM : EMT6 EMX6 This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
Rev.B 2/2 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Transition frequency BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT 0.5 0.5 120 0.5 1.55 V V V µA µA V GHz ∗ Cob 1.4 3.2 0.9 pF IC=10µA IC=1mA IE=10µA VCB=10V VEB=2V VCE/IE=10V/−10mA, f=500MHz VCB/f=10V/1MHz, IE=0A IC/IB=10mA/5mA VCE/IC=10V/5mA ∗Transition frequency of the device. Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance zElectrical characteristics curves Fig.3 Gain bandwidth product vs. emitter current EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (GHz) 0.2 0.1 0.5 1.0 2.0
5.0 Ta=25°C
VCE=10V Fig.2 Collector-emitter saturation voltage vs. collector current COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) 0.20.1 0.5 1 2 5 10 20 50 100 200 500 Ta=25°C Ic/IB=10 Ic/IB=2 Fig.1 DC current gain vs. collector current COLLECTOR CURRENT : IC (mA) DC CURRENT TRANSFER RATIO : hFE 0.20.1 0.5 1 2 51 0 2 0 5 0 100 200
500 Ta=25°C
VCE=10V Fig.5 Collector to base time constant vs. collector current characteristics COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE TIME CONSTANT : Cc rbb'(ps)0.20.1 0.5 1 2 5 10 20 50 2.0 1.0 5.0
50 Ta=25°C
VCE=10V f=31.8MHz Fig.6 Noise factor vs. collector current characteristics COLLECTOR CURRENT : IC (mA) NOISE FIGURE : NF (dB) 0.20.1 0.5 1 2 5 10 20 50 Ta=25°C VCE=6V f=500MHz Fig.4 Capacitance vs. reverse bias voltage COLLECTOR TO BASE VOLTAGE : VCB (V) FEEDBACK CAPACITANCE : Cre (pF) OUTPUT CAPACITANCE : Cob (pF) 0.20.1 0.5 1 2 5 10 20 50 0.2 0.1 0.5 1.0 2.0 f=1MHz IE=0A Cob Cre
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