IMX3T108 ROHM | Alldatasheet
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1/3 www.rohm.com ○c 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.B 2.0 1.30.9 0.7 0.65 0.65 UMX3N Each lead has same dimensionsROHM : UMT6 EIAJ : SC-88 0~0.1 (6) 0.15 0.1Min. 2.1 0.2 1.25 (1) (4) (3) (2) (5) IMX3 Each lead has same dimensionsROHM : SMT6 EIAJ : SC-74 (6) (5) (4) 0.3Min. 0.15 0.3 1.1 0.8 0~0.1 (3) 2.8 1.6 1.9 2.9 0.95 (2) 0.95 (1) Each lead has same dimensionsROHM : EMT6 EMX3 0.22 1.2 1.6 (1) (2)(5) (3) (6) (4) 0.13 0.5 0.50.5 1.0 1.6 General purpose (dual transistors) EMX3 / UMX3N / IMX3 Features Dimensions (Unit : mm) Two 2SC2412AK chips in a EMT or UMT or SMT package. Inner circuits (1) (2) (3) (4) (5) (6) (6) (5) (4) (3) (2) (1) EMX3 / UMX3N IMX3 Tr2 Tr1 Tr2 Tr1 Package, marking, and packaging specifications Type EMX3 EMT6 T2R 8000 UMX3N UMT6 TR 3000 IMX3 SMT6 T108 3000 Package Marking Code Basic ordering unit (pieces) Absolute maximum ratings (Ta=25C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 150 300(TOTAL) 150(TOTAL)EEMX3 / UMX3N IMX3 150 −55 to +150 Unit V V V mA mW Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Transition frequency BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT 120 180 0.1 0.1 0.4 560 V V V μA μA V MHz ∗ Cob − 2 3.5 pF IC=50μA IC=1mA IE=50μA VCB=60V VEB=7V VCE=12V, IE=−2mA, f=100MHz VCB=12V, IE=0mA, f=1MHz IC/IB=50mA/5mA VCE=6V, IC=1mA ∗Transition frequency of the device. Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance
2/3 www.rohm.com ○c 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.B Data Sheet EMX3 / UMX3N / IMX3 Electrical characteristics curves Fig.1 Grounded emitter propagation characteristics 0.1 0.2 0.5 Ta =100°C VCE=6V COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) 25°C −55°C Fig.2 Grounded emitter output characteristics ( Ι ) 100 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 0.05mA 0.10mA 0.15mA 0.25mA 0.30mA 0.35mA 0.20mA Ta=25°C IB=0A 0.40mA 0.50mA 0.45mA 4 8 12 16 IB=0A Ta=25°C COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 3μA 6μA 9μA 12μA 15μA 18μA 21μA 24μA 27μA 30μA Fig.3 Grounded emitter output characteristics ( ΙΙ ) 0.2 0.5 1 2 5 10 20 50 100 200 100 200 500 VCE=5V Ta=25°C Fig.4 DC current gain vs. collector current ( Ι ) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) 0.2 0.5 1 2 5 10 20 50 100 200 100 200 500 25°C −55°C Ta=100°C VCE=5V Fig.5 DC current gain vs. collector current ( ΙΙ ) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig. 6 Collector-emitter saturation voltage vs. collector current 0.2 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 IC/IB=50 Ta=25°C Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) 0.2 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 IC/IB=10 Ta=100°C 25°C −55°C Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 IC/IB=50 Ta=100°C 25°C −55°C Fig.9 Gain bandwidth product vs. emitter current 100 200 500 Ta=25°C VCE=6V EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz)
3/3 www.rohm.com ○c 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.B Data Sheet EMX3 / UMX3N / IMX3 Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 0.2 0.5 1 2 5 10 20 50 Cob Ta=25°C f=1MHz IE=0A IC=0ACib Fig.11 Base-collector time constant vs. emitter current BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) EMITTER CURRENT : IE (mA) 100 200 Ta=25°C f=32MHZ VCB=6V
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