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- Manufacturer or author: ROHM CO,. LTD.
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1/3 www.rohm.com ○c 2010 ROHM Co., Ltd. All rights reserved. 2010.02 - Rev.B General purpose transistor (isolated dual transistors) IMX25 Features Dimensions (Unit : mm) 1) Two 2SD2704K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr 1 and Tr2. Absolute maximum ratings (Ta=25C) Inner circuit Electrical characteristics (Ta=25C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) Min. 820 0.1 0.1 2700 100 V I C=10μA IC=1mA IE=10μA VCB=50V VEB=25V VCE=2V, IC=4mA IC/IB=30mA/3mA V V μA μA mV Typ. Max. Unit Conditions fT Ron Cob 0.7 3.9 VCE=6V, IE=−4mA, f=10MHz IB=5mA, Vi=100mVrms, f=1kHz VCB=10V, IE=0A, f=1MHz MHz Ω pF Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Output capacitance Output On-resistance Collector-emitter saturation voltage Packaging specifications IMX25 Part No. T110 3000 Packaging type Code Basic ordering unit (pieces) Taping ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol: X25 (1)(2)(3) 0.3 +0.1 −0.05 1.6 2.8±0.2 +0.2 −0.1 (6)(5)(4) 0.95 0.95 1.9±0.2 2.9±0.2 1.1+0.2 0.8±0.1 −0.1 0 to 0.1 0.3 to 0.6 0.15 −0.06 +0.1 All terminals have same dimensions Parameter Symbol Limits Unit VCBO 50 V VCEO 20 V VEBO 25 V IC 300 mA Tj 150 °C Tstg −55 to +150 °C Pd 300(TOTAL) mW ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Power dissipation ∗ 200mW per element must not be exceeded. Tr2 Tr1 (4) (5) (6) (3) (2) (1)
2/3 www.rohm.com ○c 2010 ROHM Co., Ltd. All rights reserved. 2010.02 - Rev.B Data Sheet IMX25 Electrical characteristic curves 0.1 0.1 100 1000COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE(ON) (V) Fig.1 Grounded emitter propagation characteristics ( Ι ) VCE=2V 25°C −40°C Ta=125°C COLLECTOR CURRENT : IC (mA) Fig.2 Grounded emitter propagation characteristics ( ΙΙ ) 0.1 0.1 100 1000 BASE TO EMITTER VOLTAGE : VBE(ON) (V) VCE=6V 25°C −40°C Ta=125°C 1 10 100 100 0 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current ( ) VCE=2V DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) 1 10 100 100 0 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C VCE=6V 1 10 100 1000 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C COLLECTOR CURRENT : IC (mA) Fig.5 Collector-emitter saturation voltage vs. collector current ( ) IC/IB=10/1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1 10 100 1000 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C COLLECTOR CURRENT : IC (mA) IC/IB=20/1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) 1 10 100 1000 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C COLLECTOR CURRENT : IC (mA) IC/IB=50/1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Base-emitter saturation voltage vs. collector current ( ) 1 10 100 100 0 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C COLLECTOR CURRENT : IC (mA) IC/IB=10/1 BASE SATURATION VOLTAGE : VBE(sat) (mV) Fig.9 Base-emitter saturation voltage vs. collector current ( ) COLLECTOR CURRENT : IC (mA) BASE SATURATION VOLTAGE : VBE(sat) (mV) 1 10 100 100 0 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C IC/IB=20/1
3/3 www.rohm.com ○c 2010 ROHM Co., Ltd. All rights reserved. 2010.02 - Rev.B Data Sheet IMX25 Fig.10 Base-emitter saturation voltage vs. collector current ( ) COLLECTOR CURRENT : IC (mA) BASE SATURATION VOLTAGE : VBE(sat) (mV) 1 10 100 100 0 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C IC/IB=50/1 Fig.11 Gain bandwidth product vs. emitter current 11 0 1 0 0 10000 Ta=25°C f=50MHz IE=0A EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) 11 0 1 0 0 0.1 100 Ta=25°C f=1MHz IE=0A 0.01 0.1 1 10 010 0.1 100 Ta= 25°C See Fig.15 ON RESISTANCE : Ron (Ω) Fig.13 Output-on resistance vs. base current ( ) BASE CURRENT : IB (mA) 0.01 0.1 1 10 010 0.1 100 Ta=25°C See Fig.16 ON RESISTANCE : Ron (Ω) Fig.14 Output-on resistance vs. base current ( ) BASE CURRENT : IB (mA) Ron measurement circuit Ron= ×RL vi−v0 RL=1kΩ IB OutputInput 100mV(rms) 1V(rms) f=1kHz Vi V Fig.15 Ron measurement circuit ( ) Ron= ×RL vi−v0 RL=1kΩ IB OutputInput 100mV(rms) 1V(rms) f=1kHz Vi V Fig.16 Ron measurement circuit ( ) This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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