IMX25

IMX25 ROHM | Alldatasheet

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General purpose transistor (isolated dual transistors) IMX25 zFeatures 1) Two 2SD2704K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. zStructure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. zExternal dimensions (Unit : mm) ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol: X25 (1)(2)(3) 0.3 +0.1 −0.05 1.6 2.8±0.2 +0.2 −0.1 (6)(5)(4) 0.95 0.95 1.9±0.2 2.9±0.2 1.1+0.2 0.8±0.1 −0.1 0 to 0.1 0.3 to 0.6 0.15 −0.06 +0.1 All terminals have same dimensions zAbsolute maximum ratings (Ta=25°C) zEquivalent circuit Parameter Symbol Limits Unit VCBO 50 V VCEO 20 V VEBO 25 V IC 300 mA Tj 150 °C Tstg −55 to +150 °C Pd 300(TOTAL) mW ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Power dissipation ∗ 200mW per element must not be exceeded. Tr2 Tr1 (4) (5) (6) (3) (2) (1) zElectrical characteristics (Ta=25°C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) Min. 820 0.1 0.1 2700 100 V IC=10µA IC=1mA IE=10µA VCB=50V VEB=25V VCE=2V, IC=4mA IC/IB=30mA/3mA V V µA µA V Typ. Max. Unit Conditions fT Ron Cob 0.7 3.9 VCE=6V, IE=−4mA, f=10MHz IB=5mA, Vi=100mVrms, f=1kHz VCB=10V, IE=0A, f=1MHz MHz Ω pF Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Output capacitance Output On-resistance Collector-emitter saturation voltage

Part No. T110 3000 Packaging type Code Basic ordering unit (pieces) Taping zElectrical characteristic curves 0.1 0.1 100 1000COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE(ON) (V) Fig.1 Grounded emitter propagation characteristics ( Ι ) VCE=2V 25°C −40°C Ta=125°C COLLECTOR CURRENT : IC (mA) Fig.2 Grounded emitter propagation characteristics ( ΙΙ ) 0.1 0.1 100 1000 BASE TO EMITTER VOLTAGE : VBE(ON) (V) VCE=6V 25°C −40°C Ta=125°C 1 10 100 1000 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current ( ) VCE=2V DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) 1 10 100 1000 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C VCE=6V 1 10 100 1000 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C COLLECTOR CURRENT : IC (mA) Fig.5 Collector-emitter saturation voltage vs. collector current ( ) IC/IB=10/1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1 10 100 1000 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C COLLECTOR CURRENT : IC (mA) IC/IB=20/1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Fig.6 Collector-emitter saturation voltage vs. collector current ( )

Ta= −40°C Ta=25°C Ta=125°C COLLECTOR CURRENT : IC (mA) IC/IB=50/1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Base-emitter saturation voltage vs. collector current ( ) 1 10 100 1000 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C COLLECTOR CURRENT : IC (mA) IC/IB=10/1 BASE SATURATION VOLTAGE : VBE(sat) (mV) Fig.9 Base-emitter saturation voltage vs. collector current ( ) COLLECTOR CURRENT : IC (mA) BASE SATURATION VOLTAGE : VBE(sat) (mV) 1 10 100 1000 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C IC/IB=20/1 Fig.10 Base-emitter saturation voltage vs. collector current ( ) COLLECTOR CURRENT : IC (mA) BASE SATURATION VOLTAGE : VBE(sat) (mV) 1 10 100 1000 100 1000 10000 Ta= −40°C Ta=25°C Ta=125°C IC/IB=50/1 Fig.11 Gain bandwidth product vs. emitter current 1 10 100 10000 Ta=25°C f=50MHz IE=0A EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) 1 10 100 0.1 100 Ta=25°C f=1MHz IE=0A 0.01 0.1 1 10010 0.1 100 Ta= 25°C See Fig.15 ON RESISTANCE : Ron (Ω) Fig.13 Output-on resistance vs. base current ( ) BASE CURRENT : IB (mA) 0.01 0.1 1 10010 0.1 100 Ta=25°C See Fig.16 ON RESISTANCE : Ron (Ω) Fig.14 Output-on resistance vs. base current ( ) BASE CURRENT : IB (mA)

Ron= ×RL vi−v0 RL=1kΩ IB OutputInput 100mV(rms) 1V(rms) f=1kHz Vi V Fig.15 Ron measurement circuit ( ) Ron= ×RL vi−v0 RL=1kΩ IB OutputInput 100mV(rms) 1V(rms) f=1kHz Vi V Fig.16 Ron measurement circuit ( )

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.