IMW65R007M2H INFINEON | Alldatasheet

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Technical content

Features

  • Ultra-lowswitchinglosses
  • Benchmarkgatethresholdvoltage,VGS(th)=4.5V
  • Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage
  • Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme
  • Robustbodydiodeoperationunderhardcommutationevents
  • .XTinterconnectiontechnologyforbest-in-classthermalperformance Benefits
  • Enableshighefficiencyandhighpowerdensitydesigns
  • Facilitatesgreateaseofuseandintegration
  • ProvidesthebestpriceperformanceratiocomparedtoIndustry’smost ambitiousroadmaps
  • Reducesthesize,weightandbillofmaterialsofthesystems
  • Enhancessystemrobustnessandreliability Potentialapplications
  • SMPS
  • SolarPVinverters
  • Energystorageandbatteryformation
  • UPS
  • EVcharginginfrastructure
  • Motordrives Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDSSoverfullTj,range 650 V RDS(on),typ 6.7 mΩ RDS(on),max 8.5 mΩ QG,typ 179 nC ID,pulse 886 A Qoss@400V 337 nC Eoss@400V 45.7 µJ Type/OrderingCode Package Marking RelatedLinks IMW65R007M2H PG-TO247-3 65R007M2 see Appendix A

CoolSiCªMOSFET650VG2 IMW65R007M2H Rev.2.2,2024-03-06Final Data Sheet TableofContents

CoolSiCªMOSFET650VG2 IMW65R007M2H Rev.2.2,2024-03-06Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified. Note: for optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous DC drain current1) IDDC 171

143 A TC=25°C

TC=100°C Peak drain current2) IDM - - 886 A TC=25°C,VGS=18V Avalanche energy, single pulse EAS - - 848 mJ ID=31.8A,VDD=50V;seetable11 Avalanche energy, repetitive EAR - - 4.24 mJ ID=31.8A,VDD=50V;seetable11 Avalanche current, single pulse IAS - - 31.8 A - MOSFETdv/dtruggedness dv/dt - - 200 V/ns VDS=0...400V Gate source voltage (static)3) VGS -7 - 23 V - Gate source voltage (transient) VGS -10 - 25 V tp≤500ns,dutycycle≤1% Power dissipation Ptot - - 625 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 175 °C - Mounting torque - - - 60 Ncm M3 and M3.5 screws Continuous reverse drain current1) ISDC 171

130 A VGS=18V,TC=25°C

VGS=0V,TC=25°C Peak reverse drain current2) ISM 886

276 A TC=25°C,tp≤250ns

TC=25°C Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min 1)LimitedbyTJ,max 2)PulsewidthtpulselimitedbyTj,max. 3) The maximum gate-source voltage in the application design should be in accordance to IPC-9592B.

CoolSiCªMOSFET650VG2 IMW65R007M2H Rev.2.2,2024-03-06Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case Rth(j-c) - - 0.24 °C/W Not subject to production test. Parameter verified by design/characterization according to JESD51-14. Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s 3Operatingrange Table4Operatingrange Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Recommended turn-on voltage VGS(on) - 18 - V - Recommended turn-off voltage VGS(off) - 0 - V -

CoolSiCªMOSFET650VG2 IMW65R007M2H Rev.2.2,2024-03-06Final Data Sheet 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table5Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source voltage VDSS 650 - - V VGS=0V,ID=2.97mA Gate threshold voltage1) VGS(th) 3.5 4.5 5.6 V VDS=VGS,ID=29.7mA Zero gate voltage drain current IDSS - µA VDS=650V,VGS=0V,Tj=25°C VDS=650V,VGS=0V,Tj=175°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 8.7 6.7 6.1 8.5 mΩ VGS=15V,ID=146.3A,Tj=25°C VGS=18V,ID=146.3A,Tj=25°C VGS=20V,ID=146.3A,Tj=25°C VGS=18V,ID=146.3A,Tj=175°C Internal gate resistance RG,int - 1.0 - Ω f=1MHz 1) Tested after 1 ms pulse at VGS = +20 V. “Linear mode” operation is not recommended. For assessment of potential “linear mode” operation, please contact Infineon sales office.

CoolSiCªMOSFET650VG2 IMW65R007M2H Rev.2.2,2024-03-06Final Data Sheet Table6Dynamiccharacteristics External parasitic elements (PCB layout) influence switching behavior significantly. Stray inductances and coupling capacitances must be minimized. For layout recommendations please use provided application notes or contact Infineon sales office. Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 6359 - pF VGS=0V,VDS=400V,f=250kHz Reverse transfer capacitance Crss - 35 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance1) Coss - 471 613 pF VGS=0V,VDS=400V,f=250kHz Output charge1) Qoss - 337 439 nC calculationbasedonCoss Effective output capacitance, energy related2) Co(er) - 571 - pF VGS=0V, VDS=0...400V Effective output capacitance, time related3) Co(tr) - 844 - pF ID=constant,VGS=0V, VDS=0...400V Turn-on delay time td(on) - 89 - ns VDD=400V,VGS=0/18V, ID=146.3A,RG,ext=5.2Ω ; see table 10 Rise time tr - 30 - ns VDD=400V,VGS=0/18V, ID=146.3A,RG,ext=5.2Ω ; see table 10 Turn-off delay time td(off) - 55 - ns VDD=400V,VGS=0/18V, ID=146.3A,RG,ext=5.2Ω ; see table 10 Fall time tf - 21 - ns VDD=400V,VGS=0/18V, ID=146.3A,RG,ext=5.2Ω ; see table 10 Turn-ON switching losses4) Eon - 3607 - µJ VDD=400V,VGS=0/18V, ID=146.3A,RG,ext=5.2Ω Turn-OFF switching losses4) Eoff - 2511 - µJ VDD=400V,VGS=0/18V, ID=146.3A,RG,ext=5.2Ω Total switching losses4) Etot - 6118 - µJ VDD=400V,VGS=0/18V, ID=146.3A,RG,ext=5.2Ω Table7Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Plateau gate to source charge QGS(pl) - 47 - nC VDD=400V,ID=146.3A, VGS=0to18V Gate to drain charge QGD - 33 - nC VDD=400V,ID=146.3A, VGS=0to18V Total gate charge QG - 179 - nC VDD=400V,ID=146.3A, VGS=0to18V 1) Maximum specification is defined by calculated six sigma upper confidence bound 2)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V. 3)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V. 4) MOSFET used in half-bridge configuration without external diode

CoolSiCªMOSFET650VG2 IMW65R007M2H Rev.2.2,2024-03-06Final Data Sheet Table8Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source reverse voltage VSD - 4.4 - V VGS=0V,IS=146.3A,Tj=25°C MOSFET forward recovery time tfr - 48.0 - ns VDD=400V,IS=146.3A, diS/dt=1000A/µs;seetable9 MOSFET forward recovery charge1) Qfr - 473 - nC VDD=400V,IS=146.3A, diS/dt=1000A/µs;seetable9 MOSFET peak forward recovery current Ifrm - 19.7 - A VDD=400V,IS=146.3A, diS/dt=1000A/µs;seetable9 1)QfrincludesQoss

CoolSiCªMOSFET650VG2 IMW65R007M2H Rev.2.2,2024-03-06Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 100 200 300 400 500 600 700 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] IDS[A] 100 101 102 103 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC IDS=f(VDS); TC=25 °C; D=0; parameter: tp Diagram3:Safeoperatingarea VDS[V] IDS[A] 100 101 102 103 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC IDS=f(VDS); TC=80 °C; D=0; parameter: tp Diagram4:Max.transientthermalimpedance tp[s] Zth(j-c),max[K/W] 10-5 10-4 10-3 10-2 10-1 10-3 10-2 10-1 100 0.5 0.2 0.1 single pulse 0.05 0.01 0.02 Zth(j-c),max=f(tP); parameter: D=tp/T

CoolSiCªMOSFET650VG2 IMW65R007M2H Rev.2.2,2024-03-06Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] IDS[A] 200 400 600 800 1000 1200 1400 1600 20 V 18 V 15 V 12 V 10 V 8 V IDS=f(VDS); Tj=25 °C; parameter: VGS Diagram6:Typ.outputcharacteristics VDS[V] IDS[A] 200 400 600 800 1000 1200 1400 1600 20 V 18 V 15 V 12 V 10 V 8 V IDS=f(VDS); Tj=175 °C; parameter: VGS Diagram7:Typ.drain-sourceon-stateresistance IDS[A] RDS(on)[Ω ] 200 400 600 800 1000 1200 1400 0.008 0.018 0.028 15 V 12 V 10 V 18 V 20 V RDS(on)=f(IDS); Tj=125 °C; parameter: VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[normalized] -50 -25 100 125 150 175 0.5 1.0 1.5 2.0 RDS(on)=f(Tj); ID=146.3 A; VGS=18 V

CoolSiCªMOSFET650VG2 IMW65R007M2H Rev.2.2,2024-03-06Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] IDS[A] 200 400 600 800 1000 1200 1400 1600 175 °C 25 °C IDS=f(VGS); VDS=20 V; parameter: Tj Diagram10:Typ.gatecharge QG[nC] VGS[V] 100 120 140 160 180 200 400 V VGS=f(QG); ID=146.3 A pulsed; parameter: VDD Diagram11:Typ.reversedraincurrentcharacteristics VSD[V] ISD[A] 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 10-1 100 101 102 103 175 °C 25 °C ISD=f(VSD); VGS=0 V; parameter: Tj Diagram12:Typ.reversedraincurrentcharacteristics VSD[V] ISD[A] 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 10-1 100 101 102 103 25 °C 175 °C ISD=f(VSD); VGS=18 V; parameter: Tj

CoolSiCªMOSFET650VG2 IMW65R007M2H Rev.2.2,2024-03-06Final Data Sheet Diagram13:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 175 100 200 300 400 500 600 700 800 900 EAS=f(Tj); ID=31.8 A; VDD=50 V Diagram14:Drain-sourcebreakdownvoltage Tj[°C] VDSS[V] -50 -25 100 125 150 175 650 660 670 680 690 700 VDSS=f(Tj); ID=2.97 mA Diagram15:Typ.capacitances VDS[V] C[pF] 100 150 200 250 300 350 400 450 500 550 600 650 101 102 103 104 Ciss Coss Crss C=f(VDS); VGS=0 V; f=250 kHz Diagram16:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 150 200 250 300 350 400 450 500 550 600 650 100 125 150 Eoss=f(VDS)

CoolSiCªMOSFET650VG2 IMW65R007M2H Rev.2.2,2024-03-06Final Data Sheet Diagram17:Typ.Qossoutputcharge VDS[V] Qoss[nC] 100 150 200 250 300 350 400 450 500 550 600 650 100 150 200 250 300 350 400 450 500 Qoss=f(VDS) Diagram18:Typ.SwitchingLossesvsRG,ext RG,ext[Ω ] E[µJ] 2000 4000 6000 8000 10000 12000 14000 Etot Eon Eoff E=f(RG,ext); VDD=400 V; VGS=0/18 V; ID=146.3 A Diagram19:Typ.SwitchingLossesvsswitchingcurrent IDS[A] E[µJ] 100 150 200 250 300 5000 10000 15000 20000 25000 Etot Eon Eoff E=f(IDS); VDD=400 V; VGS=0/18 V; RG,ext=5.3 Ω

CoolSiCªMOSFET650VG2 IMW65R007M2H Rev.2.2,2024-03-06Final Data Sheet 6TestCircuits Table9Bodydiodecharacteristics Test circuit for body diode characteristics Body diode recovery waveform RG1 RG2 IS VDS Qfr tfr Ifrm Ifrm Is dIs / dtVDD ISO VDD VDS IS Table10Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS RG VDD Table11Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS VDSS ID VDS ID VDS VDD

CoolSiCªMOSFET650VG2 IMW65R007M2H Rev.2.2,2024-03-06Final Data Sheet 7PackageOutlines DIMENSIONSMIN.MAX.MILLIMETERSPG-TO247-3-U06PACKAGE - GROUPNUMBER: A2bDcEeLQøPL1 AA1 2.161.85 5.44 20.800.551.07 15.70 4.105.493.5019.80 16.25 1.330.6821.10 6.003.704.4720.32 16.1317.65 b11.902.41 E23.685.10E31.002.60 S6.046.30 Figure1OutlinePG-TO247-3,dimensionsinmm

CoolSiCªMOSFET650VG2 IMW65R007M2H Rev.2.2,2024-03-06Final Data Sheet 8AppendixA Table12RelatedLinks

  • IFXCoolSiCCoolSiCªMOSFET650VG2Webpage:www.infineon.com
  • IFXCoolSiCCoolSiCªMOSFET650VG2applicationnote:www.infineon.com
  • IFXCoolSiCCoolSiCªMOSFET650VG2simulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

CoolSiCªMOSFET650VG2 IMW65R007M2H Rev.2.2,2024-03-06Final Data Sheet RevisionHistory IMW65R007M2H Revision:2024-03-06,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2023-11-02 Release of final version 2.1 2024-02-29 updated simulation model; included Eon and Eoff data and diagrams 2.2 2024-03-06 minor layout changes Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2023InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.