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Technical content

Features

  • V DSS = 1200 V at Tvj = 25°C
  • I DCC = 225 A at Tvj = 25°C
  • R DS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Benchmark gate threshold voltage, V GS(th) = 4.2 V
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
  • Robust body diode for hard commutation
  • .XT interconnection technology for best-in-class thermal performance Potential applications
  • General purpose drives (GPD)
  • EV-Charging
  • Online UPS/Industrial UP
  • String inverters
  • Solar optimizer Product validation
  • Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
  • Please also note the application note AN2019-05 for power and thermal cycling 1 2 3

Description

1 – gate 2 – drain 3 – source Type Package Marking IMW120R007M1H PG-TO247-3-STD-N2.5 12M1H007 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 www.infineon.com 2022-01-31

CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Datasheet 2 Revision 1.00 2022-01-31

1 Package

Table 1 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Storage temperature Tstg -55 150 °C Soldering temperature wave soldering 1.6 mm (0.063 in.) from case for 10 s 260 °C Mounting torque M M3 screw Maximum of mounting process: 3 0.6 Nm Thermal resistance, junction-ambient Rth(j-a) 62 K/W

2 MOSFET

Table 2 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS Tvj ≥ 25 °C 1200 V Continuous DC drain current for Rth(j-c,max), limited by Tvj(max) IDDC VGS = 18 V Tc = 25 °C 225 A Tc = 100 °C 168 Peak drain current, tp limited by Tvj(max) IDM VGS = 18 V 504 A Gate-source voltage, max. transient voltage1) VGS tp ≤ 0.5 µs, D<0.001 -10/23 V Gate-source voltage, max. static voltage VGS -5/20 V Avalanche energy, single pulse EAS ID = 35 A, VDD = 50 V, L = 1 mH 638 mJ Avalanche energy, repetitive EAR ID = 35 A, VDD = 50 V, L = 5.2 µH 3.2 mJ MOSFET dv/dt robustness dv/dt VDS = 0...800 V 150 V/ns Power dissipation, limited by Tvj(max) Ptot Tc = 25 °C 750 W Tc = 100 °C 375 1) Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime. Table 3 Recommended values Parameter Symbol Note or test condition Values Unit Recommended turn-on gate voltage VGS(on) 15...18 V (table continues...) IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 3 Revision 1.00 2022-01-31

Table 3 (continued) Recommended values Parameter Symbol Note or test condition Values Unit Recommended turn-off gate voltage VGS(off) -5...0 V Table 4 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Drain-source on-state resistance RDS(on) ID = 108 A Tvj = 25 °C, VGS(on) = 18 V 7 9.9 mΩ Tvj = 100 °C, VGS(on) = 18 V Tvj = 175 °C, VGS(on) = 18 V Tvj = 25 °C, VGS(on) = 15 V 8.9 11.1 Gate-emitter threshold voltage VGS(th) ID = 47 mA, VDS = VGS (tested after 1 ms pulse at VGS = 20 V) Tvj = 25 °C 3.5 4.2 5.2 V Tvj = 175 °C 3.6 Zero gate-voltage drain current IDSS VDS = 1200 V, VGS = 0 V Tvj = 25 °C 860 µA Tvj = 175 °C 15 Gate leakage current IGSS VDS = 0 V VGS = 23 V 300 nA VGS = -10 V -300 Forward transconductance gfs ID = 108 A, VDS = 20 V 72.6 S Internal gate resistance RG,int f = 1 MHz, VAC = 25 mV 1.8 Ω Input capacitance Ciss VDD = 25 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 9170 nF Output capacitance Coss VDD = 25 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 420 pF Reverse transfer capacitance Crss VDD = 25 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 61 pF Coss stored energy Eoss VDD = 25 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 172 µJ Total gate charge QG VDD = 800 V, ID = 108 A, VGS = 0/18 V, turn-on pulse 220 nC Plateau gate charge QGS(pl) VDD = 800 V, ID = 108 A, VGS = 0/18 V, turn-on pulse 72 nC Gate-to-drain charge QGD VDD = 800 V, ID = 108 A, VGS = 0/18 V, turn-on pulse 64 nC (table continues...) IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 4 Revision 1.00 2022-01-31

Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Turn-on delay time td(on) VDD = 800 V, ID = 108 A, VGS = 0/18 V, RGS(on) = 1 Ω, RGS(off) = 1 Ω, diode: body diode at VGS = 0 V , Lσ = 15 nH Tvj = 25 °C 62 ns Tvj = 175 °C 55 Rise time tr VDD = 800 V, ID = 108 A, VGS = 0/18 V, RGS(on) = 1 Ω, RGS(off) = 1 Ω, diode: body diode at VGS = 0 V, Lσ = 15 nH Tvj = 25 °C 58 ns Tvj = 175 °C 75 Turn-off delay time td(off) VDD = 800 V, ID = 108 A, VGS = 0/18 V, RGS(on) = 1 Ω, RGS(off) = 1 Ω, diode: body diode at VGS = 0 V, Lσ = 15 nH Tvj = 25 °C 77 ns Tvj = 175 °C 85 Fall time tf VDD = 800 V, ID = 108 A, VGS = 0/18 V, RGS(on) = 1 Ω, RGS(off) = 1 Ω, diode: body diode at VGS = 0 V, Lσ = 15 nH Tvj = 25 °C 44 ns Tvj = 175 °C 44 Turn-on energy Eon VDD = 800 V, ID = 108 A, VGS = 0/18 V, RGS(on) = 1 Ω, RGS(off) = 1 Ω, diode: body diode at VGS = 0 V, Lσ = 15 nH Tvj = 25 °C 2900 µJ Tvj = 175 °C 3470 Turn-off energy Eoff VDD = 800 V, ID = 108 A, VGS = 0/18 V, RGS(on) = 1 Ω, RGS(off) = 1 Ω, diode: body diode at VGS = 0 V, Lσ = 15 nH Tvj = 25 °C 1200 µJ Tvj = 175 °C 1320 Total switching energy Etot VDD = 800 V, ID = 108 A, VGS = 0/18 V, RGS(on) = 1 Ω, RGS(off) = 1 Ω, diode: body diode at VGS = 0 V, Lσ = 15 nH Tvj = 25 °C 4561 µJ Tvj = 175 °C 6028 (table continues...) IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 5 Revision 1.00 2022-01-31

Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. MOSFET/body diode thermal resistance, junction to case Rth(j-c) 0.15 0.20 K/W Virtual junction temperature Tvj -55 175 °C Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test setup and package. Dynamic test circuit see Fig. F.

3 Body diode

Table 5 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS Tvj ≥ 25 °C 1200 V Continuous reverse drain current for Rth(j-c,max), limited by Tvj(max) ISDC VGS = 0 V Tc = 25 °C 163 A Tc = 100 °C 93 Peak reverse drain current, tp limited by Tvj(max) ISM VGS = 0 V 504 A Table 6 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Drain-source reverse voltage VSD ISD = 108 A, VGS = 0 V Tvj = 25 °C 3.8 5 V Tvj = 100 °C 3.7 Tvj = 175 °C 3.6 MOSFET forward recovery charge Qfr VDD = 800 V, ISD = 108 A, VGS = 0 V, dif/dt = 3000 A/µs, Qfr includes also QC Tvj = 25 °C 900 nC Tvj = 175 °C 1651 MOSFET peak forward recovery current Ifrm VDD = 800 V, ISD = 108 A, VGS = 0 V, dif/dt = 3000 A/µs, Qfr includes also QC Tvj = 25 °C 7 A Tvj = 175 °C 8 (table continues...) IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 6 Revision 1.00 2022-01-31

Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. MOSFET forward recovery energy Efr VDD = 800 V, ISD = 108 A, VGS = 0 V, dif/dt = 3000 A/µs, Qfr includes also QC Tvj = 25 °C 461 µJ Tvj = 175 °C 1238 Virtual junction temperature Tvj -55 175 °C IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 7 Revision 1.00 2022-01-31

4 Characteristics diagrams

Reverse bias safe operating area (RBSOA), MOSFET IDS = f(VDS) Tvj ≤ 175 °C, VGS = 0/18 V, Tc = 25 °C Power dissipation as a function of case temperature limited by bond wire, MOSFET Ptot = f(Tc) 0 200 400 600 800 1000 1200 1400 100 200 300 400 500 600 0 25 50 75 100 125 150 175 100 200 300 400 500 600 700 800 Maximum DC drain to source current as a function of case temperature limited by bond wire, MOSFET IDS = f(Tc) Maximum source to drain current as a function of case temperature limited by bond wire, MOSFET ISD = f(Tc) VGS = 0 V 0 25 50 75 100 125 150 175 100 150 200 250 300 0 25 50 75 100 125 150 175 100 150 200 250 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 8 Revision 1.00 2022-01-31

Typical transfer characteristic , MOSFET IDS = f(VGS) VDS = 20 V, tp = 20 µs Typical gate-source threshold voltage as a function of junction temperature , MOSFET VGS(th) = f(Tvj) ID = 47 mA 0 4 8 12 16 20 200 400 600 800 1000 1200 1400 1600 1800 -50 -25 0 25 50 75 100 125 150 175 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Typical output characteristic, VGS as parameter , MOSFET IDS = f(VDS) Tvj = 25 °C, tp = 20 µs Typical output characteristic, VGS as parameter, MOSFET IDS = f(VDS) Tvj = 175 °C, tp = 20 µs 0 4 8 12 16 20 100 200 300 400 500 600 700 800 900 1000 0 4 8 12 16 20 100 200 300 400 500 600 700 800 900 1000 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 9 Revision 1.00 2022-01-31

Typical on-state resistance as a function of junction temperature, MOSFET RDS(on) = f(Tvj) ID = 108 A Typical gate charge , MOSFET VGS = f(QG) ID = 108 A, VDS = 800 V -50 -25 0 25 50 75 100 125 150 175 0 60 120 180 240 300 Typical capacitance as a function of drain-source voltage , MOSFET C = f(VDS) f = 100 kHz, VGS = 0 V Typical reverse drain voltage as function of junction temperature , MOSFET VSD = f(Tvj) ISD = 108 A, VGS = 0 V 1 10 100 1000 100 1000 10000 -50 -25 0 25 50 75 100 125 150 175 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 10 Revision 1.00 2022-01-31

Typical reverse drain current as function of reverse drain voltage, VGS as parameter, MOSFET ISD = f(VSD) Tvj = 25 °C, tp = 20 µs Typical reverse drain current as function of reverse drain voltage, VGS as parameter, MOSFET ISD = f(VSD) Tvj = 175 °C, tp = 20 µs 0 1 2 3 4 5 6 100 150 200 250 300 350 400 450 500 0 1 2 3 4 5 6 100 150 200 250 300 350 400 450 500 Typical switching energy as a function of junction temperature, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V, MOSFET E = f(Tvj) VGS = 0/18 V, ID = 108 A, RG,ext = 1 Ω, VDD = 800 V Typical switching energy as a function of drain current, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V, MOSFET E = f(ID) Tvj = 175 °C, RG,ext = 1 Ω, VDD = 800 V, VGS = 0/18 V 25 50 75 100 125 150 175 1000 2000 3000 4000 5000 6000 7000 8000 9000 40 60 80 100 120 140 160 180 200 220 2000 4000 6000 8000 10000 12000 14000 16000 18000 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 11 Revision 1.00 2022-01-31

Typical switching energy losses as a function of gate resistance, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V, MOSFET E = f(RG,ext) VGS = 0/18 V, ID = 108 A, Tvj = 175 °C, VDD = 800 V Typical switching times as a function of gate resistance, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V, MOSFET t = f(RG,ext) VGS = 0/18 V, ID = 108 A, Tvj = 175 °C, VDD = 800 V 0 10 20 30 40 50 4000 8000 12000 16000 20000 0 10 20 30 40 50 200 400 600 800 Typical reverse recovery charge as a function of revere drain current slope, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V, MOSFET Qfr = f(dif/dt ) VGS = 0/18 V, ID = 108 A, VDD = 800 V Typical reverse recovery current as a function of reverse drain current slope, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V, MOSFET Ifrm = f(dif/dt ) VGS = 0/18 V, ID = 108 A, VDD = 800 V 0 1000 2000 3000 4000 5000 6000 0.00 0.40 0.80 1.20 1.60 2.00 0 1000 2000 3000 4000 5000 6000 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 12 Revision 1.00 2022-01-31

Typical switching energy losses as a function of dead time / blanking time, test circuit in Fig. F, 2nd device own body diode: VGS = -5 V, MOSFET E = f(tdead) VGS = -5/18 V, ID = 108 A, Tvj = 175 °C, VDD = 800 V Max. transient thermal impedance (MOSFET/diode) , MOSFET Zth(j-c),max = f(tp) D = tp/T 50 250 450 650 850 1050 500 1000 1500 2000 2500 3000 3500 4000 1E-5 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 13 Revision 1.00 2022-01-31

5 Package outlines

5.44 c Q D E e L S P A b 0.38 6.04 5.35 1.00 3.40 3.85 20.70 13.08 15.50 0.51 3.50 19.80 12.38 1.60 4.70 2.20 1.00 1.50 2.57 0.89 6.30 6.25 17.65 2.60 5.10 14.15 3.70 21.50 16.30 20.40 1.35 4.50 2.41 5.30 2.60 1.40 2.50 3.43 REVISION 25.07.2018 ISSUE DATE EUROPEAN PROJECTION SCALE 5mm DOCUMENT NO. Z8B00003327 DIMENSIONS MIN. MAX. 3:1 2 3 4 PG-TO247-3-STD-N2.5 Figure 1 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 14 Revision 1.00 2022-01-31

6 Testing conditions

Figure A. Definition of switching times Figure B. Definition of diode switching characteristics Figure C. Definition of switching losses Figure E. Thermal equivalent circuit ID(t) 1% ID t ID(t) 1% ID t VDS(t)VDS(t) t t1 t2 t3 t4 3% VDS3% VDS Eon = t3ʃt4VDS*ID*dt Eoff = t1ʃt2VDS*ID*dt VDS(t) t t1 t2 t3 t4 3% VDS Eon = t3ʃt4VDS*ID*dt Eoff = t1ʃt2VDS*ID*dt 90% VGS 10% VGS VGS(t) t 90% VGS 10% VGS VGS(t) t r2 r3r1 M =TC Tj(t) p(t) τ1/r1 τ2/r2 τn/rn r2 r3r1 M =TC Tj(t) p(t) τ1/r1 τ2/r2 τn/rn ton 90% td(on) tr 10%10%VGSVGS VDSVDS td(off)td(off) tftf tofftoffton 90% td(on) tr 10%VGS VDS td(off) tf toff I,V t VR IF tata tbtb dIp/dt QbQa I,V t VR IF Ifrm tfr ta tb dIp/dt 10% Ifrm dIfr/dt 90% Ifrm tfr = ta + tb Qfr = Qa + Qb QbQa QG,totQGS,pl VGS,VDS 97% VDS VDS t, Q Q QG,totQGS,pl QQGDGD VGS,VDS 97% VDS VGS = 18 V VDS t, Q Q VDD ½Lσ ½Lσ RG DUT Cσ L second device VGS(off) VDD ½Lσ ½Lσ RG DUT Cσ L second device VGS(off) Figure D. Definition of QGD Figure F. Dynamic test circuit Parasitic inductance Lσ, Parasitic capacitor Cσ, Figure 2 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 15 Revision 1.00 2022-01-31

Revision history

Document revision Date of release Description of changes 1.00 2022-01-31 Final datasheet IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Datasheet 16 Revision 1.00 2022-01-31

All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-01-31 Published by Infineon Technologies AG

81726 Munich, Germany

© 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABB961-001 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.