IMT65R039M1H INFINEON | Alldatasheet

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Technical content

Features

  • Optimizedswitchingbehaviorathighercurrents
  • CommutationrobustfastbodydiodewithlowQf
  • Superiorgateoxidereliability
  • Tj,max=175°Candexcellentthermalbehavior
  • LowerRDS(on)andpulsecurrentdependencyontemperature
  • Increasedavalanchecapability
  • Compatiblewithstandarddrivers(recommendeddrivingvoltage:0V-18V)
  • Kelvinsourceprovidesupto4timeslowerswitchinglosses Benefits
  • Uniquecombinationofhighperformance,highreliabilityandeaseofuse
  • Easeofuseandintegration
  • Suitablefortopologieswithcontinuoushardcommutation
  • Higherrobustnessandsystemreliability
  • Efficiencyimprovement
  • Reducedsystemsizeleadingtohigherpowerdensity Potentialapplications
  • SMPS
  • UPS(uninterruptablepowersupplies)
  • SolarPVinverters
  • EVcharginginfrastructure
  • Energystorageandbatteryformation
  • ClassDamplifiers Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:Thesourceandsensesourcepinsarenotexchangeable. Theirexchangemightleadtomalfunction. Table1KeyPerformanceParameters Parameter Value Unit VDS@TJ=25°C 650 V RDS(on),typ 39 mΩ RDS(on),max 51 mΩ QG,typ 41 nC IDM 122 A Qoss@400V 97 nC Eoss@400V 14.6 µJ Type/OrderingCode Package Marking RelatedLinks IMT65R039M1H PG-HSOF-8 65R039M1 see Appendix A

650VCoolSiCªM1SiCTrenchPowerDevice IMT65R039M1H Rev.2.1,2023-02-24Final Data Sheet TableofContents

650VCoolSiCªM1SiCTrenchPowerDevice IMT65R039M1H Rev.2.1,2023-02-24Final Data Sheet 1Maximumratings atTJ=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous DC drain current1) ID

43 A TC=25°C

TC=100°C Peak drain current2) IDM - - 122 A TC=25°C Avalanche energy, single pulse EAS - - 213 mJ ID=8.0A,VDD=50V;seetable11 Avalanche energy, repetitive EAR - - 1.06 mJ ID=8.0A,VDD=50V;seetable11 Avalanche current, single pulse IAS - - 8.0 A - MOSFETdv/dtruggedness dv/dt - - 200 V/ns VDS=0...400V Gate source voltage (static)3) VGS -5 - 23 V static Gate source voltage (transient) VGS -7 - 25 V tpulse,positive<=1%dutycycle/fsw Power dissipation Ptot - - 263 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature TJ -55 - 175 °C - Mounting torque - - - n.a. Ncm - Continuous reverse drain current1) ISDC

35 A VGS=18V,TC=25°C

VGS=0V,TC=25°C Repetitive peak reverse drain current1) ISRM - - 122 A TC=25°C,pulsewidthtp<=250ns Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min 1)LimitedbyTJ,max 2)PulsewidthtplimitedbyTJ,max 3) The maximum gate-source voltage in the application design should be in accordance to IPC-9592B

650VCoolSiCªM1SiCTrenchPowerDevice IMT65R039M1H Rev.2.1,2023-02-24Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 0.57 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 35 45 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflow soldering allowed Tsold - - 260 °C reflow MSL2 3Operatingrange Table4Operatingrange Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate-source voltage operating range including undershoots1) VGS -2 - 20 V - 1)Importantnotice:Ifthegatesourcevoltageofthedeviceinapplicationexceedstheoperatingrange(Table4),thedevice RDS(on)andVGS(th)mightexceedthemaximumvaluestatedinthedatasheetattheendofthelifetimeofthedevice.Inorderto ensure sound operation of the device over the planned lifetime, the maximum ratings (Table 2) and the CoolSiCTM MOSFET 650V M1 trench power device application note AN_1907_PL52_1911_144109 must be considered.

650VCoolSiCªM1SiCTrenchPowerDevice IMT65R039M1H Rev.2.1,2023-02-24Final Data Sheet 4Electricalcharacteristics atTJ=25°C,unlessotherwisespecified Table5Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=0.75mA Gate threshold voltage1) VGS(th) 3.5 4.5 5.7 V VDS=VGS,ID=7.5mA Zero gate voltage drain current IDSS 150 - µA VDS=650V,VGS=0V,TJ=25°C VDS=650V,VGS=0V,TJ=175°C Gate leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.039 0.055 0.051 - Ω VGS=18V,ID=25.0A,TJ=25°C VGS=18V,ID=25.0A,TJ=175°C Internal gate resistance RG - 5.0 - Ω f=1MHz Table6Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 1393 - pF VGS=0V,VDS=400V,f=250kHz Reverse transfer capacitance Crss - 15 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance2) Coss - 160 208 pF VGS=0V,VDS=400V,f=250kHz Output charge2) Qoss - 97 126 nC calculationbasedonCoss Effective output capacitance, energy related3) Co(er) - 182 - pF VGS=0V, VDS=0...400V Effective output capacitance, time related4) Co(tr) - 241 - pF ID=constant,VGS=0V, VDS=0...400V Turn-on delay time td(on) - 7.1 - ns VDD=400V,VGS=18V,ID=25.0A, RG=1.8Ω ;seetable10 Rise time tr - 10.9 - ns VDD=400V,VGS=18V,ID=25.0A, RG=1.8Ω ;seetable10 Turn-off delay time td(off) - 17.4 - ns VDD=400V,VGS=18V,ID=25.0A, RG=1.8Ω ;seetable10 Fall time tf - 7 - ns VDD=400V,VGS=18V,ID=25.0A, RG=1.8Ω ;seetable10 1)Testedafter1mspulseatVGS=+20V 2)Maximumspecificationisdefinedbycalculatedsixsigmaupperconfidencebound 3)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 4)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

650VCoolSiCªM1SiCTrenchPowerDevice IMT65R039M1H Rev.2.1,2023-02-24Final Data Sheet Table7Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 11 - nC VDD=400V,ID=25.0A, VGS=0to18V Gate to drain charge Qgd - 9 - nC VDD=400V,ID=25.0A, VGS=0to18V Gate charge total Qg - 41 - nC VDD=400V,ID=25.0A, VGS=0to18V Table8Bodydiodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source reverse voltage VSD - 4.0 - V VGS=0V,IS=25.0A,TJ=25°C MOSFET forward recovery time tfr - 21.2 - ns VDD=400V,IS0=25.0A, diS/dt=1000A/µs;seetable9 MOSFET forward recovery charge Qf - 102 - nC VDD=400V,IS0=25.0A, diS/dt=1000A/µs;seetable9 MOSFET peak forward recovery current Ifrm - 8.3 - A VDD=400V,IS0=25.0A, diS/dt=1000A/µs;seetable9

650VCoolSiCªM1SiCTrenchPowerDevice IMT65R039M1H Rev.2.1,2023-02-24Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 100 150 200 250 300 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms DC 10 ms ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 0.5 single pulse 0.02 0.05 0.01 0.2 0.1 ZthJC=f(tP);parameter:D=tp/T

650VCoolSiCªM1SiCTrenchPowerDevice IMT65R039M1H Rev.2.1,2023-02-24Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 150 200 250 20 V 18 V 15 V 12 V 10 V 8 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 100 150 200 250 20 V 18 V 15 V 12 V 10 V 8 V ID=f(VDS);Tj=150°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 100 125 150 175 200 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 18 V 15 V 12 V 10 V 20 V RDS(on)=f(ID);Tj=150°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance TJ[°C] RDS(on)[normalized] -50 -25 100 125 150 175 0.5 1.0 1.5 2.0 RDS(on)=f(Tj);ID=25.0A;VGS=18V

650VCoolSiCªM1SiCTrenchPowerDevice IMT65R039M1H Rev.2.1,2023-02-24Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 100 150 200 250 175 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 400 V VGS=f(Qgate);ID=25.0Apulsed;parameter:VDD Diagram11:Typ.reversecharacteristics VSD[V] ISD[A] 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 10-1 100 101 102 103 175 °C 25 °C ISD=f(VSD);VGS=0V;parameter:Tj Diagram12:Typ.reversecharacteristics VSD[V] ISD[A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-1 100 101 102 103 25 °C 175 °C ISD=f(VSD);VGS=18V;parameter:Tj

650VCoolSiCªM1SiCTrenchPowerDevice IMT65R039M1H Rev.2.1,2023-02-24Final Data Sheet Diagram13:Avalancheenergy TJ[°C] EAS[mJ] 100 125 150 175 100 150 200 250 EAS=f(Tj);ID=8.0A;VDD=50V Diagram14:Drain-sourcebreakdownvoltage TJ[°C] V(BR)DSS[V] -50 -25 100 125 150 175 620 630 640 650 660 670 680 690 V(BR)DSS=f(Tj);ID=0.75mA Diagram15:Typ.capacitances VDS[V] C[pF] 100 150 200 250 300 350 400 450 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram16:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 150 200 250 300 350 400 450 500 Eoss=f(VDS)

650VCoolSiCªM1SiCTrenchPowerDevice IMT65R039M1H Rev.2.1,2023-02-24Final Data Sheet Diagram17:Typ.Qossoutputcharge VDS[V] Qoss[nC] 100 150 200 250 300 350 400 450 500 100 110 120 Qoss=f(VDS)

650VCoolSiCªM1SiCTrenchPowerDevice IMT65R039M1H Rev.2.1,2023-02-24Final Data Sheet 6TestCircuits Table9Bodydiodecharacteristics(CoolSiC) Test circuit for body diode characteristics Body diode recovery waveform RG1 RG2 IS VDS Qf tfr Ifrm Ifrm Is dIs / dtVDD ISO VDD VDS IS Table10Switchingtimes(CoolSiC) Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS RG VDD Table11Unclampedinductiveload(CoolSiC) Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DSS ID VDS ID VDS VDD

650VCoolSiCªM1SiCTrenchPowerDevice IMT65R039M1H Rev.2.1,2023-02-24Final Data Sheet 7PackageOutlines DIMENSIONSMIN.MAX.MILLIMETERSPG-HSOF-8-U02PACKAGE - GROUPNUMBER: 1.20 (BSC) 2.202.40 AbDEE1E2e L b19.709.90 L10.500.90 L20.500.70 Figure1OutlinePG-HSOF-8,dimensionsinmm/inches

650VCoolSiCªM1SiCTrenchPowerDevice IMT65R039M1H Rev.2.1,2023-02-24Final Data Sheet 8AppendixA Table12RelatedLinks

  • IFXCoolSiCM1Webpage:www.infineon.com
  • IFXCoolSiCM1applicationnote:www.infineon.com
  • IFXCoolSiCM1simulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

650VCoolSiCªM1SiCTrenchPowerDevice IMT65R039M1H Rev.2.1,2023-02-24Final Data Sheet RevisionHistory IMT65R039M1H Revision:2023-02-24,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2023-02-20 Release of final version 2.1 2023-02-24 Typo correction in footnote 1 page 4 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2023InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.