IMT4 DIODES | Alldatasheet
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Maximum Ratings @ TA = 25/c176C unless otherwise specified A M J LD F B C H K B2 B1 E1 C2 E2 C1 Mechanical Data /c183Case: SOT-26, Molded Plastic /c183Case material - UL Flammability Rating Classification 94V-0 /c183Moisture sensitivity: Level 1 per J-STD-020A /c183Terminals: Solderable per MIL-STD-202, Method 208 /c183Terminal Connections: See Diagram /c183Marking: KX7, See Page 2 /c183Ordering & Date Code Information: See Page 2 /c183Weight: 0.016 grams (approx.) IMT4 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Characteristic Symbol IMT4 Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -50 mA Power Dissipation (Note 1) Pd 225 mW Thermal Resistance, Junction to Ambient (Note 1) R/c113JA 555 /c176C/W Operating and Storage Temperature Range Tj,T STG -55 to +150 /c176C TCUDORPWEN Electrical Characteristics @ TA = 25/c176C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage V(BR)CBO -120 /c190/c190 V IC = -50/c109A Collector-Emitter Breakdown Voltage V(BR)CEO -120 /c190/c190 V IC = -1.0mA Emitter-Base Breakdown Voltage V(BR)EBO -5.0 /c190/c190 V IE = -50/c109A Collector Cutoff Current ICBO /c190/c190 -0.5 /c109A VCB = -100V Emitter Cutoff Current IEBO /c190/c190 -0.5 /c109A VEB = -4.0V ON CHARACTERISTICS (Note 2) DC Current Gain hFE 180 /c190 820 /c190IC = -2.0mA, VCE = -6.0V Collector-Emitter Saturation Voltage VCE(SAT) /c190/c190 -0.5 V IC = -10mA, IB = -1.0mA SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT /c190 140 /c190 MHz VCE = -12V, IE = 2.0mA, f = 100MHz SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D /c190/c1900.95 F /c190/c1900.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 /c97 0/c1768° /c190 All Dimensions in mm B2 B1 E1 C2 E2 C1 2. Short duration pulse test used to minimize self-heating effect.
DS30303 Rev. 2 - 2 2 of 3 IMT4 www.diodes.com TCUDORPWEN Marking Information Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 123 45 6 7 89 OND Date Code Key KX7 YM KX7 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Year 2002 2003 2004 2005 2006 2007 2008 2009 Code NP R S T UV W
Ordering Information
(Note 3) Device Packaging Shipping IMT4-7 SOT-26 3000/Tape & Reel 100 150 200 250 0 100 200 P , POWER DISSIPATION (mW)d T , AMBIENT TEMPERATURE (°C)A Fig. 1, Power Derating Curve (see Note 1) 100 200 300 1.0 10.0 100 h , DC CURRENT GAINFE I COLLECTOR CURRENT (mA)C, Fig.2 T ypical DC Current Gain vs. Collector Current 400 500 T= 2 5 °Ca T = -25 °Ca T= 7 5 °Ca V= 6 VCE
DS30303 Rev. 2 - 2 3 of 3 IMT4 www.diodes.com TCUDORPWEN 0.1 1.0 100 10.0 I , COLLECTOR CURRENT (mA)C V , BASE-EMITTER VOLTAGE (V)BE(ON) Fig. 3 Typical Collector Current vs. Base-Emitter Voltage T= 2 5 °Ca T= - 2 5°Ca T= 7 5 °Ca V= 6 VCE I , COLLECTOR CURRENT (mA)C V , COLLECTOR-EMITTER VOLTAGE (V)CE Fig. 6 Typical Collector Current vs. Collector-Emitter Voltage T= 2 5 °Ca 1000 100 1 10 100 f , GAIN BANDWIDTH PRODUCT (MHz)T I , COLLECTOR CURRENT (mA)C Fig. 5 Typical Gain Bandwidth Product vs. Collector Current V= 5 VCE 0.010 0.100 1.0 1 10 100 1000 V , COLLECTOR TO EMITTER SATURATIONCE(SAT) VOLTAGE (V) I , COLLECTOR CURRENT (mA)C Fig. 4 Typical Collector-Emitter Voltage vs. Collector Current T= 1 5 0°Ca T= - 5 0°Ca T= 2 5 °Ca I/ I = 1 0CB