EMT2 ROHM | Alldatasheet
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EMT2 / EMT3 / UMT2N / IMT2A / IMT3A Transistors General purpose (dual transistors) EMT2 / EMT3 / UMT2N / IMT2A / IMT3A !Features 1) Two 2SA1037AK chips in a EMT or UMT or SMT package. !Equivalent circuits (1)(2)(3) (4) (5) (6) (6)(5)(4) (3) (2) (1) (1)(2)(3) (4) (5) (6) (6)(5)(4) (3) (2) (1) EMT2 / UMT2N IMT2A IMT3AEMT3 !Absolute maximum ratings (Ta=25°C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −60 −50 150 300(TOTAL) 150(TOTAL)EMT2 / EMT3 / UMT2N IMT2A / IMT3A 150 −55~+150 Unit V V V mA mW Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. !Package, marking, and packaging specifications EMT2 EMT6 T2R 8000 EMT3 EMT6 T2R 8000 IMT2A SMT6 T108 3000 IMT3A SMT6 T108 3000 UMT2N UMT6 TR 3000 Type Package Marking Code Basic ordering unit (pieces) !External dimensions (Units : mm) ROHM : EMT6 EMT2 / EMT3 ROHM : UMT6 EIAJ : SC-88 UMT2N ROHM : SMT6 EIAJ : SC-74 IMT2A / IMT3A 0.22 1.2 1.6 (1) (2)(5) (3) (6) (4) 0.13 0.5 0.50.5 1.0 1.6 Each lead has same dimensions 0.1Min. 0~0.1 (6) 2.0 1.30.9 0.15 0.7 2.1 0.65 0.2 1.25 (1) 0.65 (4) (3) (2) (5) Each lead has same dimensions (6)(5)(4) 0.3Min. 0.15 0.3 1.1 0.8 0~0.1 (3) 2.8 1.6 1.9 2.9 0.95 (2) 0.95 (1) Each lead has same dimensions !Electrical characteristics (T a=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Transition frequency BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT −60 −50 120 140 −0.1 −0.1 −0.5 560 V V V µA µA V MHz ∗ Cob − 45 p F IC=−50µA IC=−1mA IE=−50µA VCB=−60V VEB=−6V VCE=−12V, IE=2mA, f=100MHz VCE=−12V, IE=0A, f=1MHz IC/IB=−50mA/−5mA VCE=−6V, IC=−1mA ∗Transition frequency of the device. Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance