IMT2AG-AG6-R

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UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw 1 of 4 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R215-003.E GENERAL PURPOSE DUAL TRANSISTOR  DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package.  FEATURES * Two MMBT9015 chips in an SMT package.  EQUIVALENT CIRCUITS  ORDERING INFORMATION Pin Description Order Number Package 12345 6 Packing IMT2AG-AG6-R SOT-26 C1 B2 C2 E2 E1 B1 Tape Reel IMT2AG-AG6-R (1)Packing Type (2)Package Type (3)Green Package (1) R: Tape Reel (2) AG6: SOT-26 (3) G: Halogen Free and Lead Freee  MARKING

IMT2A PNP EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw Q W - R 2 1 5 - 0 0 3 . E  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage V CBO -60 V Collector to Emitter voltage V CEO -50 V Emitter to Base Voltage V EBO -6 V Collector Current I C -150 mA Collector Power Dissipation (total) P C 300(Note) mW Junction Temperature T J 150 °C Storage Temperature T STG -55~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. 200mW per element must not be exceeded.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Base Breakdown Voltage BV CBO I C =-50 μA -60 V Collector to Emitter Breakdown Voltage BV CEO I C =-1mA -50 V Emitter to Base Breakdown Voltage BV EBO I E =-50 μA -6 V Collector Cut Off Current I CBO V CB =-60 V -0.1 μA Emitter Cut Off Current I EBO V EB =-6 V -0.1 μA Collector to Emitter Saturation Voltage V CE(SAT) IC=-50 mA, IB=-5 mA -0.5 V DC Forward Current Gain h FE V CE =-6 V, IC=-1mA 120 560 Transition Frequency f T V CE =-12V,IE =2mA, f=100MHz (Note) 140 MHz Output Capacitance C OB V CB = -12V,IE =0mA,f=1MHz 4 5 pF Note: Transition frequency of the device.

IMT2A PNP EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw Q W - R 2 1 5 - 0 0 3 . E  TYPICAL CHARACTERISTICS -10 Collector to Emitter Voltage,V CE (V) Collector Current,IC (mA) Grounded Emitter Output Characteristics (Ⅰ) -50 -10 Collector to Emitter Voltage,VCE (V) Collector Current,IC (mA) Grounded Emitter Output Characteristics (Ⅱ) -40 -30 -20 -10 -2 -3 -4 -5 VCE=-6V-50 -20 -10 -0.5 -0.2 -0.1 Base to Emitter Voltage,VBE (V) Collector Current,IC (mA) Grounded Emitter Propagation Characteristics TA=25℃500 200 100 Collector Current,IC (mA) DC Current Gain,hFE DC Current Gain vs. Collector Current TA=25℃-1 -0.5 -0.2 -0.1 -0.05 Collector Current,IC (mA) Collector Saturation Voltage,VCE(SAT) (V) Collector-Emitter Saturation Voltage vs. Collector Current TA=25℃ TA=25℃ IB=0A IB=-5µA IB=-10µA IB=-15µA IB=-20µA IB=-25µA IB=-30µA IB=0A IB=-50µA IB=-100µA IB=-150µA IB=-200µA IB=-250µA IB=-300µA IB=-350µA Ta=100℃ 25℃ -40℃ TA=25℃ VCE=-5V -3V -1V Ic / IB =50 Ic / IB =20 Ic / IB =10

IMT2A PNP EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw Q W - R 2 1 5 - 0 0 3 . E UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.