IMBF170R1K0M1 ISC | Alldatasheet
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Technical content
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FEATURES
- DrainCurrent-ID=5.2A@TC=25℃
- DrainSource Voltage-VDSS=1700V(Min)
- Static Drain-Source On-Resistance -RDS(on) =1.0Ω(Typ.)@VGS=12V
APPLICATIONS
- Energygeneration
- Industrialpower supplies
- Infrastructure–Charger AbsoluteMaximumRatings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 1700 V VGS Gate-SourceVoltage-Continuous -10/+20 V ID DrainCurrent-Continuous@TC=25℃ 5.2 A ID DrainCurrent-Continuous@TC=100℃ 3.7 A IDM DrainCurrent-SinglePulse 13.3 A PD TotalDissipation@TC=25℃ 68 W PD TotalDissipation@TC=100℃ 34 W TJ Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 2.2 ℃/W
www.iscsemi.com 2 ELECTRICALCHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0,ID=0.25mA 1700 - - V IDSS ZeroGateVoltageDrainCurrent VDS=1700V,VGS=0 - - 11 uA IGSS Gate-BodyLeakageCurrent VGS=-10/+20V,VDS=0 - - ±100 nA VGS(th) GateThresholdVoltage VDS=VGS,ID=1.1mA 3.5 - 5.7 V RDS(on) Drain-SourceOn-Resistance VGS=12V,ID=1A - 1.0 - Ω PACKAGE OUTLINE(UNIT:mm)
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