IMBD4148 VISHAY | Alldatasheet
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www.vishay.com Vishay Semiconductors Rev. 1.6, 15-May-13 1 Document Number: 85731 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Switching Diode MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
- Silicon epitaxial planar diodes
- Fast switching diode in case SOT-23, especially suited for automatic insertion.
- AEC-Q101 qualified
- Base P/N-E3 - RoHS-compliant, commercial grade
- Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note (1) Device on fiberglass substrate, see layout on next page. PARTS TABLE PART ORDERING CODE INTERNAL CO NSTRUCTION TYPE MARKING REMARKS IMBD4148 IMBD4148-E3-08 or IMBD4148-E3-18 Single diode A2 Tape and reelIMBD4148-HE3-08 or IMBD4148-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 75 V Peak reverse voltage V RM 100 V Rectified current (average) half wave rectification with resist. (1) f 50 Hz I F(AV) 150 mA Surge forward current t < 1 s, T j = 25 °C I FSM 500 mA Power dissipation (1) up to Tamb = 25 °C P tot 350 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air (1) RthJA 450 °C/W Junction temperature T j 150 °C Storage temperature range T stg - 65 to + 150 °C Operating temperature range T op - 55 to + 150 °C
www.vishay.com Vishay Semiconductors Rev. 1.6, 15-May-13 2 Document Number: 85731 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 LAYOUT FOR RthJA TEST Thickness: Fiberglass 1.5 mm (0.059 inches) Copper leads 0.3 mm (0.012 inches) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Dynamic Forward Resistance vs. Forward Current ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I F = 10 mA V F 1.0 V Leakage current VR = 70 V I R 2500 nA VR = 70 V, Tj = 150 °C I R 50 μA VR = 25 V, Tj = 150 °C I R 30 μA Diode capacitance V F = VR = 0 C D 4p F Reverse recovery time (see figures) IF = 10 mA to iR = 1 mA, VR = 6 V, RL = 100 trr 4n s 17451 15 (0.59) 12 (0.47) 0.8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0.8) 2 (0.8) 1.5 (0.06) 5.1 (0.2) 18661 1000 100 0.1 0.01 I - For ward Current ( mA )F VF - Forward Voltage ( V ) = 100 °CTj 25 °C 18662 100 1000 10000 r - Dynamic For ward Resistancef (Ω) 11 00.10.01 100 IF - Forward Current (mA) =2 5°CTj f=1k H z
www.vishay.com Vishay Semiconductors Rev. 1.6, 15-May-13 3 Document Number: 85731 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature Fig. 4 - Relative Capacitance vs. Reverse Voltage Fig. 5 - Leakage Current vs. Junction Temperature Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration 200
18663 Tamb -A mbient Temperature ( °C)
20 40 60 80 100 120 140 1601800 P - Admissi ble Power Dissipation ( mW )tot 18664 24680 1.1 1.0 0.9 0.8 0.7 CD (VR)/CD (0 V) - Relative Capacitance (pF) VR - Reverse Voltage (V) =2 5°CTj f=1M H z 18665 100 1000 10000 0 20 40 60 80 100 120 140 160 180 200 I - Leakage C urrent ( nA )R Tj -J unction Temperature ( °C) =2 0 VVR 10 10 1-1 100 0.1 ν /T T = 1/f=t pp IFRM tp T t I ν=0 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -218666 I - Admissi ble RepetitiveFRM Peak Forward Current ( A ) tp -P ulse Length ( s )
www.vishay.com Vishay Semiconductors Rev. 1.6, 15-May-13 4 Document Number: 85731 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters (inches): SOT-23 Foot print recommendation: Rev. 8 - Date: 23.Sept.2009 17418 Document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.7 (0.028) 0.9 (0.035) 0° to 8° 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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