IM828-XCC INFINEON | Alldatasheet
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Technical content
Features
Fully isolated Dual In-Line molded module 1200V CoolSiC™ MOSFETs Rugged 1200V SOI gate driver technology with stability against transient and negative voltage Allowable negative VS potential up to -11 V for signal transmission at VBS = 15 V Integrated bootstrap functionality Over current shutdown Built-in NTC thermistor for temperature monitor Under-voltage lockout at all channels Low side source pins accessible for all phase current monitoring (open source) Cross-conduction prevention All of 6 switches turn off during protection Programmable fault clear timing and enable input Lead-free terminal plating; RoHS compliant Potential applications Fan drives and active power factor correction and high performance motor drives Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Table 1 Part Ordering Table Product name Package type Standard pack Orderable part number Form MOQ IM828-XCC DIP 36x23D 14 pcs / tube 280 IM828XCCXKMA1
Datasheet 2 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Table of contents Table of contents
Datasheet 3 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Internal electrical schematic
1 Internal electrical schematic
NW (18) NV (19) W (21) V (22) U (23) P (24) (2) VB(U) (15) ITRIP (14) RFE (10) LIN(U) (11) LIN(V) (12) LIN(W) (16) VSS (13) VDD (4) VB(V) (6) VB(W) (7) HIN(U) (8) HIN(V) (9) HIN(W) (1) VS(U) (3) VS(V) (5) VS(W) NU (20) Thermistor RBS1 RBS2 RBS3 (17) VTH Figure 1 Internal electrical schematic
Datasheet 4 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Pin configuration
2 Pin configuration
2.1 Pin assignment
(1) VS(U) (2) VB(U) (3) VS(V) (4) VB(V) (5) VS(W) (6) VB(W) (7) HIN(U) (8) HIN(V) (9) HIN(W) (10) LIN(U) (11) LIN(V) (12) LIN(W) (13) VDD (14) RFE (15) ITRIP (16) VSS (24) P (23) U (22) V (21) W (20) NU (19) NV (18) NW(17) VTH Figure 2 Module pinout Table 2 Pin assignment Pin number Pin name Pin description
1 VS(U) U-phase high side floating IC supply offset voltage
2 VB(U) U-phase high side floating IC supply voltage
3 VS(V) V-phase high side floating IC supply offset voltage
4 VB(V) V-phase high side floating IC supply voltage
5 VS(W) W-phase high side floating IC supply offset voltage
6 VB(W) W-phase high side floating IC supply voltage
7 HIN(U) U-phase high side gate driver input
8 HIN(V) V-phase high side gate driver input
9 HIN(W) W-phase high side gate driver input
10 LIN(U) U-phase low side gate driver input
11 LIN(V) V-phase low side gate driver input
12 LIN(W) W-phase low side gate driver input
13 VDD Low side control supply
14 RFE Programmable fault clear time, fault output, enable input
15 ITRIP Over current shutdown input
Datasheet 5 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Pin configuration Pin number Pin name Pin description
16 VSS Low side control negative supply
17 VTH Thermistor therminal
18 NW W-phase low side source
19 NV V-phase low side source
20 NU U-phase low side source
21 W Motor W-phase output
22 V Motor V-phase output
23 U Motor U-phase output
24 P Positive bus input voltage
2.2 Pin description
HIN(U, V, W) and LIN(U, V, W) (Low side and high side control pins, Pin 7 - 12) These pins are positive logic and they are responsible for the control of the integrated MOSFETs. The schmitt-trigger input threshold s of them are such to guarantee LSTTL and CMOS compatibility down to 3.3 V controller outputs. Pull- down resistor of about 5 k is internally provided to pre-bias inputs during supply start -up. Input schmitt-trigger and noise filter provide beneficial noise rejection to short input pulses. The noise filter suppresses control pulses which are below the filter time tFIL,IN. The filter acts according to Figure 4. IM828 INPUT NOISE FILTER k5 Schmitt-Trigger SWITCH LEVEL VIH; VILVSS HINx LINx Figure 3 Input pin structure HIN LIN HO LOlow high tFIL,IN tFIL,INa) b) HIN LIN HO LO Figure 4 Input filter timing diagram It is not recommended for proper work to provide input pulse-width lower than 1 µs. The integrated gate drive r provides additionally a shoot through prevention capability which avoids the simultaneous on-state of two gate drivers of the same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and LO3). When two inputs of a same leg are activated, only former activated one is activated so that the leg is kept steadily in a safe state. A minimum deadtime insertion of typically 300 ns is also provided by driver IC, in order to reduce cross - conduction of the external power switches. RFE (Fault / Fault clear time / Enable, Pin 14) The RFE pin conbines three functions in one pin: programmable fault clear time by RC-network, fault- out and enable input. The programmable fault-clear time can be adjusted by RC network, which is external pull-up resistor and capacitor. For example, typical value is about 1ms at 1 Mand 2 nF. The fault-out indicates a module failure in case of under voltage at pin VDD or in case of triggered over current detection at ITRIP. The microcontroller can pull this pin low to disable the IPM functionality. This is enable function. RFE VSS RON,FLT From ITRIP - Latch From UV detection IM828 NOISE FILTER Schmitt-Trigger Bi-direction Figure 5 Internal circuit at pin RFE
Datasheet 6 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Pin configuration VTH (Thermistor, Pin 17) The VTH pin provides direct access to the NTC, which is referenced to VSS. An external pull -up resistor connected to +5 V ensures that the resulting voltage can be directly connected to the microcontroller. ITRIP (Over current detection function, Pin 15) IM828 provides an over current detection function by connecting the ITRIP input with the MOSFET drain current feedback. The ITRIP comparator threshold (typ. 0.5 V) is referenced to VSS ground. An input noise filter ( tITRIP = typ. 5 00 ns) prevents the driver to detect false over-current events. Over current detection generates a shutdown of all outputs of the gate driver after the shutdown propagation delay of typically 1µs. Fault-clear time is set to typical 1.1ms at RRCIN = 1 M and CRCIN = 2 nF. VDD, VSS (Low side control supply and reference, Pin 13, 16) VDD is the control supply and it provides power both to input logic and to output power stage. Input logic is referenced to VSS ground. The under -voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 12.2 V is present. The IC shuts down all the gate drivers power outputs, when the VDD supply voltage is below VDDUV- = 11.2 V. This prevents the external power switches from critically low gate voltage levels during on-state and therefore from excessive power dissipation. VB(U, V, W) and VS(U, V, W) (High side supplies, Pin 1 - 6) VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the external high side power device source voltage. Due to the low power consum ption, the floating driver stage is supplied by integrated bootstrap circuit. The under-voltage detection operates with a rising supply threshold of typical V BSUV+ = 1 1.2 V and a falling threshold of VBSUV- = 10.2 V. VS(U, V, W) provide a high robustness against negative voltage in respect of VSS of -50 V transiently. This ensures very stable designs even under rough conditions. NW, NV, NU (Low side source, Pin 18 - 20) The low side sources are available for current measurements of each phase leg. It is recommended to keep the connection to pin VSS as short as possible in order to avoid unnecessary inductive voltage drops. W, V, U (High side source and low side drain, Pin 21 - 23) These pins are motor U, V, W input pins. P (Positive bus input voltage, Pin 24) The high side MOSFETs are connected to the bus voltage. It is noted that the bus voltage does not exceed 900 V.
Datasheet 7 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Absolute maximum ratings
3 Absolute maximum ratings
(VDD = 15 V and TJ = 25° C, if not stated otherwise)
3.1 Module section
Description Symbol Condition Value Unit Storage temperature range TSTG -40 ~ 125 °C Operating case temperature TC Refer to Figure 7 -40 ~ 125 °C Operating junction temperature TJ -40 ~150 °C Isolation test voltage VISO 1min, RMS, f = 60Hz 2500 V
3.2 Inverter section
Description Symbol Condition Value Unit Max. blocking voltage VDSS 1200 V DC link supply voltage of P-N VPN Applied between P-N 900 V DC link supply voltage (surge) of P-N VPN(surge) Applied between P-N 1000 V DC drain current1 ID TC = 25° C, TJ < 150° C ±35 A TC = 80° C, TJ < 150° C ±20 Pulse drain current2 IDP ±60 A Power dissipation per MOSFET Ptot 86 W Short circuit withstand time3 tSC VDC ≤ 800 V, TJ ≤ 150° C 3 µs
3.3 Control section
Description Symbol Condition Value Unit High Side offset voltage VS 1200 V Repetitive peak reverse voltage of bootstrap diode VRRM 1200 V Module control supply voltage VDD -1 ~ 20 V High side floating supply voltage (VB reference to VS) VBS -1 ~ 20 V Input voltage(LIN, HIN, ITRIP, RFE) VIN -1 ~ VDD + 0.3 V 1 Pulse width and period are limited by junction temperature.
2 Verified by design, tp limited by Tjmax
3 Verified by design for single short circuit event.
Datasheet 8 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Thermal characteirstics
4 Thermal characteirstics
Description Symbol Condition Value Unit Min. Typ. Max. Single MOSFET thermal resistance, junction-case RthJC - - - 1.45 K/W
Datasheet 9 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Recommended operation conditions
5 Recommended operation conditions
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. Description Symbol Value Unit Min. Typ. Max. DC link supply voltage of P-N VPN 350 600 800 V Low side supply voltage VDD 13.5 15 18.5 V High side floating supply voltage (VB vs. VS) VBS 12.5 - 18.5 V Logic input voltages LIN, HIN, ITRIP, RFE VIN 0 - 5 V PWM carrier frequency at VDD = 15 V FPWM - - 80 kHz External dead time between HIN & LIN DT 0.5 - - µs Voltage between VSS - N (including surge) VCOMP -5 - 5 V Minimum input pulse width PWIN(ON) PWIN(OFF) 1 - - µs Control supply variation ΔVBS, ΔVDD
1 V/µs
Datasheet 10 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Static parameters
6 Static parameters
(VDD = 15 V and TJ = 25° C, if not stated otherwise)
6.1 Inverter section
Description Symbol Condition Value Unit Min. Typ. Max. Drain-source on-state resistance RDS(on) ID = 20 A, VIN = 5 V TJ = 25° C 150° C Drain-source leakage current IDSS VDS = 1200V - - 1 mA Diode forward voltage VSD ISD = 20 A, VIN = 0 V TJ = 25° C 150° C 3.9 3.8 5.8 V
6.2 Control section
Description Symbol Condition Value Unit Min. Typ. Max. Logic "1" input voltage (LIN, HIN) VIH - 1.9 2.3 V Logic "0" input voltage (LIN, HIN) VIL 0.7 0.9 - V ITRIP positive going threshold VIT,TH+ 475 500 525 mV ITRIP input hysteresis VIT,HYS - 55 - mV VDD and VBS supply under voltage positive going threshold VDDUV+ VBSUV+ 11.5 10.5 12.2 11.2 13.0 12.0 V VDD / VBS supply under voltage negative going threshold VDDUV- VBSUV- 10.5 9.5 11.2 10.2 12.0 11.0 V VDD / VBS supply under voltage lockout hysteresis VDDUVH VBSUVH - 1 - V Quiescent VBx supply current (VBx only) IQBS HIN = 0 V - 175 - µA Quiescent VDD supply current (VDD only) IQDD LINX = 0 V, HINX = 5 V - 1 - mA Input bias current for LIN, HIN IIN+ VIN = 5 V - 1 - mA Input bias current for ITRIP IITRIP+ VITRIP = 5 V - 30 100 µA Input bias current for RFE IRFE VRFE = 5 V, VITRIP = 0 V - - 5 µA RFE output voltage VRFE IRFE = 10 mA, VITRIP = 1 V - 0.4 - V VRFE positive going threshold VRFE,TH+ - 1.9 2.3 V VRFE negative going threshold VRFE,TH- 0.7 0.9 - V Bootstrap diode forward voltage VF_BSD IF = 0.3 mA - 0.9 - V
Datasheet 11 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Static parameters Description Symbol Condition Value Unit Min. Typ. Max. Bootstrap diode resistance RBSD Between VF = 4 V and VF = 5 V - 120 -
Datasheet 12 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Dynamic parameters
7 Dynamic parameters
(VDD = 15 V and TJ = 25° C, if not stated otherwise)
7.1 Inverter section
Description Symbol Condition Value Unit Min. Typ. Max. High side Turn-on propagation delay time ton VHIN = 5 V, ID = 20 A, VDC = 600 V - 870 - ns Turn-on rise time tr - 45 - ns Turn-on switching time tc(on) - 140 - ns Reverse recovery time trr - 60 - ns Turn-off propagation delay time toff VHIN = 0 V, ID = 20 A, VDC = 600 V - 960 - ns Turn-off fall time tf - 70 - ns Turn-off switching time tc(off) - 100 - ns MOSFET turn-on energy (includes reverse recovery of diode) Eon VDC = 600 V, ID = 20 A TJ = 25° C 150° C 0.90 1.04 mJ MOSFET turn-off energy Eoff VDC = 600 V, ID = 20 A TJ = 25° C 150° C 0.48 0.66 mJ Bodydiode recovery energy Erec VDC = 600 V, ID = 20 A TJ = 25° C 150° C 0.08 0.10 mJ Low side Turn-on propagation delay time ton VLIN = 5 V, ID = 20 A, VDC = 600 V - 960 - ns Turn-on rise time tr - 85 - ns Turn-on switching time tc(on) - 230 - ns Reverse recovery time trr - 90 - ns Turn-off propagation delay time toff VLIN = 0 V, ID = 20 A, VDC = 600 V - 880 - ns Turn-off fall time tf - 50 - ns Turn-off switching time tc(off) - 60 - ns MOSFET turn-on energy (includes reverse recovery of diode) Eon VDC = 600 V, ID = 20 A TJ = 25° C 150° C 1.51 1.62 mJ MOSFET turn-off energy Eoff VDC = 600 V, ID = 20 A TJ = 25° C 150° C 0.25 0.34 mJ Bodydiode recovery energy Erec VDC = 600 V, ID = 20 A TJ = 25° C 150° C 0.07 0.07 mJ Short circuit propagation delay time tSCP From VIT,TH+ to 10% ISC - 3 - µs
Datasheet 13 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Dynamic parameters
7.2 Control section
Description Symbol Condition Value Unit Min. Typ. Max. Input filter time ITRIP tITRIP VITRIP = 1 V - 500 - ns Input filter time at LIN, HIN for turn on and off tFIL,IN VLIN, HIN = 0 V or 5 V - 350 - ns Fault clear time after ITRIP-fault tFLT,CLR VITRIP = 1V, Vpull-up = 5V (R = 1 M, C = 2 nF) 1.1 - ms ITRIP to Fault propagation delay tFLT VLIN, HIN = 0 or 5 V, VITRIP = 1V - 650 900 ns Internal deadtime DTIC VIN = 0 or VIN = 5 V 300 - - ns Matching propagation delay time (On & Off) all channels MT External dead time > 500ns - - 130 ns
Datasheet 14 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Thermistor characteristics
8 Thermistor characteristics
Description Condition Symbol Value Unit Min. Typ. Max. Resistance TNTC = 25° C RNTC - 85 - k B-constant of NTC (Negative Temperature Coefficient) B(25/100) - 4092 - K -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 500 1000 1500 2000 2500 3000 3500 Thermistor temperature [℃] Thermistor resistance [kΩ ] Figure 6 Thermistor resistance – temperature curve and table (For more information, please refer to the application note ‘AN2020-41 CIPOS™ Maxi application note’) 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 Thermistor temperature [℃] Thermistor resistance [kΩ ] Min. Typ. Max.
Datasheet 15 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Mechanical characteristics and ratings
9 Mechanical characteristics and ratings
Description Condition Value Unit Min. Typ. Max. Comparative Tracking Index(CTI) 600 - - Mounting torque M3 screw and washer 0.49 - 0.78 Nm Backside curvature Refer to Figure 8 0 - 150 µm Weight - 7.02 - g
Datasheet 16 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Qualification information
10 Qualification information
UL Certification File number E314539 Moisture sensitivity level (SOP package only) - RoHS Compliant Yes (Lead-free terminal plating) ESD(Electrostatic Discharge) HBM(Human body model) Class as per JESD22-A114 2 (> 2000 V to < 4000 V) CDM(Charged Device model) Class as per JESD22-C101 C3 (>= 1000 V)
Datasheet 17 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Diagrams and tables
11 Diagrams and tables
11.1 TC measurement point
Figure 7 TC measurement point1
11.2 Backside curvature measurement point
Figure 8 Backside curvature measurement position 1Any measurement except for the specified point in Figure 7 is not relevant for the temperature verification and brings wrong or different information.
Datasheet 18 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Diagrams and tables
11.3 Switching test circuit
0.1μF 220μF 0.1μF VDC 10m 22μF One leg diagram U, V, W 0.1nF 100 0.1nF 100 HIN VB HO VS VDD VSS LO VS LIN VDD Inductor load P NU, NV, NW HS SW LS SW LINx HINx Figure 9 Switching test circuit
11.4 Switching times definition
0.9V 2.1V 90% 10%10% 10% 90% toff tf ton tr tc(off) tc(on) 10% trr 10% Figure 10 Switching times definition
Datasheet 19 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Application guide
12.1 Typical application schematic
3.3V line U-phase current sensing NW (18) NV (19) W (21) V (22) U (23) P (24) (2) VB(U) (15) ITRIP (14) RFE (10) LIN(U) (11) LIN(V) (12) LIN(W) (16) VSS (13) VDD (4) VB(V) (6) VB(W) (7) HIN(U) (8) HIN(V) (9) HIN(W) (1) VS(U) (3) VS(V) (5) VS(W) NU (20) Thermistor VSS VDD LIN3 LIN2 LIN1 RFE ITRIP LO3 LO2 LO1 HO1 HO2 HO3 VB1 VS1 VB2 VS2 VB3 VS3 HIN3 HIN2 HIN1 RBS1 RBS2 RBS3 <Signal for protection> Temperature monitor Micro Controller #3.1 #6 #7 3-ph AC Motor V-phase current sensing W-phase current sensing <Signal for protection> Power GND line Control GND line (17) VTH 5 or 3.3V line #3.2 Figure 11 Typical application circuit 1. Input circuit - To reduce input signal noise by high speed switching, the RIN and CIN filter circuit should be mounted. (100 , 1 nF) - CIN should be placed as close to VSS pin as possible. 2. Itrip circuit - To prevent protection function errors, CITRIP should be placed as close to Itrip and VSS pins as possible. 3. RFE circuit
3.1 Pull-up resistor and pull-down capacitor
- RFE output is an open drain output. This signal line should be pulled up to the positive side of the 5 V / 3.3 V logic power supply with a proper resistor RPU. - The fault-clear time is adjusted by RC network of a pull-up resistor, a pull-down capacitor and pull-up voltage. tFLTCLR = -Rpull-up ∙ Cpull-down ∙ ln(1- VRFE,TH+/Vpull-up) + internal fault-clear time 160 s tFLTCLR = -1 M x 2 nF x ln(1 - 1.9 / 5 V) + 160 s 1.1 ms at R = 1 M, C = 2 nF and Vpull-up = 5 V A pull-up resistor is limited to max. 2 M
3.2 RC filter
- It is recommended that RC filter be placed as close to the controller as possible. 4. VB-VS circuit - Capacitor for Low side floating supply voltage should be placed as close to VB and VS pins as possible. 5. Snubber capacitor - The wiring between IM828 and snubber capacitor including shunt resistor should be as short as possible. 6. Shunt resistor - The shunt resistor of SMD type should be used for reducing its stray inductance. 7. Ground pattern - Ground pattern should be separated at only one point of shunt res istor as short as possible.
Datasheet 20 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Application guide
12.2 Performance charts
Figure 12 Operating current SOA1 (Based on multi-chip heating RthJC) 1This operating current SOA is just reference information based on simulation results. It can be changed by each user’s actual operating conditions.
Datasheet 21 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC Package outline
Datasheet 22 of 23 V 2.0 2020-09-03 CIPOS™ Maxi IM828 IM828-XCC
Revision history
Date of release Description of changes V2.0 July, 2020 Updated max. Rdson, max. Rthjc and performance chart V1.3 October, 2018 Updated thermal resistance V1.2 October, 2018 Changed some comment : Name of Figure 12 was changed from Maximum operating current SOA to operating current SOA. Additional comment was changed in section 12.2. V1.1 September, 2018 Changed some values : PWM carrier frequency on section 5 - 50kHz 80kHz at VDD = 15 V Added max. RDS(on) value at TJ=25°C ; 69m V1.0 August, 2018 Initial release
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