IM70A135V01 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Ultra-low 170µA current consumption in high performance mode
  • Low current consumption 70µA in low power mode
  • Signal-to-noise ratio of 70dB(A) SNR
  • Acoustic overload point at 135dBSPL
  • Flat frequency response with a low-frequency roll-off at 37 Hz
  • Package dimensions: 3.50mm x 2.65mm x 1.00mm Potential applications
  • Active Noise Cancellation (ANC) headphones and wireless earbuds (TWS)
  • Devices with Voice User Interface (VUI) - Smart speakers - Home automation - IoT devices
  • High quality audio capturing - Conference systems - Cameras and camcorders
  • Industrial or home monitoring with audio pattern detection Product validation Technology qualified for industrial applications. Ready for validation in industrial applications according to the relevant tests of IEC 60747 and 60749 or alternatively JEDEC47/20/22.

Description

Infineon’s XENSIV™ MEMS analog differential microphone IM70A135V01 is a compact size and high-performance microphone with a very high acoustic overload point of 135 dBSPL. This microphone is based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level. The small size makes this microphone especially suited for TWS earbud applications. Type Package Marking IM70A135V01 PG-TLGA-5-5 I70A13 IM70A135V01 Datasheet Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document 1.00 www.infineon.com 2023-04-03

Datasheet 2 1.00 2023-04-03

1 Block diagram

Figure 1 IM70A135V01 block diagram

2 Typical microphone interface

1µF VDD Analog Input GND OUT + + >1µF R R Figure 2 Differential analog microphone interface example Note: Power supply filtering capacitors should be placed physically as close to the microphone as possible. Detailed information on electrical, acoustical, and mechanical implementation can be found in the application note on XENSIV™ MEMS microphone web page IM70A135V01 Datasheet

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3 Typical performance characteristics

Test conditions (unless otherwise specified): VDD = 2.75V, TA= 25°C, output unloaded -12-9-6-3036912 10 100100010000 Normalized Output Level [dB]Frequency [Hz] Figure 3 Typical amplitude response -20-15-10-5051015202530 0 20000400006000080000 Sensitivity relative to 1kHz [dB]Frequency [Hz] Figure 4 Typical ultrasonic response -180-135-90-4504590 10 100100010000Phase [°] Group Delay [s] Frequency [Hz] GroupDelayPhase Figure 5 Typical group delay and phase response 10 100100010000 Spectral Noise Density [dBV/sqrt(Hz)] Frequency [Hz] Normal ModeLow Power Mode Figure 6 Typical noise floor (unweighted) 0.01 0.1 9095100105110115120125130135140 THD [%] Input Sound Pressure Level [dB] Normal ModeLow Power Mode Figure 7 Typical THD vs SPL 0.01 0.1 100 1000 10000 THD [%] Frequency [Hz] 110dB SPL 132dB SPL135dB SPL Figure 8 Typical THD vs frequency IM70A135V01 Datasheet Datasheet 4 1.00 2023-04-03

PSRR [dB] Frequency [Hz] Normal ModeLow Power Mode Figure 9 Typical PSRR 020406080100120140160180200 IDD[µA] VDD[V] Low power mode, SNR=69dB Normalmode, SNR=70dB Figure 10 Typical I DD vs VDD IM70A135V01 Datasheet Datasheet 5 1.00 2023-04-03

4 Acoustic characteristics

Test conditions (unless otherwise specified in the table): VDD = 2.75V, TA = 25°C, 55% R.H., audio bandwidth 20Hz to 20kHz, output unloaded Table 1 IM70A135V01 acoustic specifications Parameter Symbol Values Unit Note or test conditionMin. Typ. Max. Sensitivity S -39 -38 -37 dBV 1kHz, 94 dB SPL, all operating modes Low Frequency Roll-off fC LP 37 Hz -3dB point relative to 1kHz Signal to Noise Ratio Normal mode SNRNP 70 dB(A) A-Weighted Low power mode SNRLP 69 Total Harmonic Distortion Normal mode 94dBSPL THDNP 0.3 Measuring 2nd to 5th harmonics, 1kHz, Sensitivity=typical 132dBSPL 1.0 Low power mode 94dBSPL THDLP 0.3 124dBSPL 1.0 Acoustic Overload Point (Typical THD = 10%) Normal mode AOPNP 135 dBSPLLow power mode AOPLP 130 Phase Response 75Hz 1kHz 2 4kHz -2 Group Delay 250Hz 125 µs 600Hz 22 1kHz 8 4kHz 1 Directivity Omnidirectional Pickup pattern Polarity Increasing Vout Increasing SPL IM70A135V01 Datasheet Datasheet 6 1.00 2023-04-03

4.1 Free field frequency response

-12 10 100 1000 10000 Normalized Output Level [dB] Frequency [Hz] Upper LimitLower Limit Figure 11 IM70A135V01 free field frequency response Table 2 IM70A135V01 free field frequency response, normalized to 1kHz sensitivity value Frequency [Hz] Upper limit [dB] Lower limit [dB] 37 -1.5 -4.5 100 1 -1.5 300 1 -1 1000 0 0 6000 1.5 -1 8000 2 -1 10000 3 -1 15000 6 0 IM70A135V01 Datasheet Datasheet 7 1.00 2023-04-03

5 Electrical characteristics and parameters

5.1 Absolute maximum ratings

Stresses at or above the listed maximum ratings may affect device reliability or cause permanent device damage. Functional device operation at these conditions is not guaranteed. Table 3 Absolute maximum ratings Parameter Symbol Values Unit Note / Test ConditionMin. Max. Supply voltage VDDmax 3.0 V Storage temperature TS -40 100 °C Operating temperature TA -40 85 °C

5.2 Electrical characteristics

Test conditions (unless otherwise specified in the table): VDD = 2.75V, TA = 25°C, 55% R.H. Table 4 IM70A135V01 electrical characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Current consumption Normal mode IDDNP 170 230 µA Input ≤ 94 dBSPLLow power mode IDDLP 70 80 Start-up time tstartup 10 30 ms Start-up time in all operating modes after VDDmin is applied Mode switching time tModeChange 10 ms Time of undefined output after mode change detected Brown out voltage VBrownOut 1.2 V Brown out is triggered for voltage below VBrownOut Vout DC-voltage Normal mode VOUT_DC_NP 1.35 V Low power mode VOUT_DC_LP 0.9 Power supply rejection ratio in band (differential) Normal mode PSRRInBand_N P dB VDD=2.75V + 100mVpp sinewave Low power mode PSRRInBand_L P 80 VDD=1.6V + 100mVpp sinewave Power supply rejection ratio common mode Normal mode PSRRCM_NP 65 dB VDD= 2.75 V + 100mVpp sinewave Low power mode PSRRCM_LP 60 VDD= 1.6 V + 100mVpp sinewave Output impedance Normal mode Zout_NP 250 Ω Low power mode Zout_LP 500 Ω IM70A135V01 Datasheet Datasheet 8 1.00 2023-04-03

5.3 Electrical parameters

Table 5 IM70A135V01 electrical parameters Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Supply voltage Normal mode VDD 2.3 2.75 3.0 V A 100nF bypass capacitor(CVDD) should be placed close to the microphone VDD pin to ensure best SNR performance Low power mode 1.52 1.6 1.8 VDD ramp-up time 1 ms VDD reaches its final value within ± 10 % tolerance Output load Cload 100 pF Rload 25 kΩ IM70A135V01 Datasheet Datasheet 9 1.00 2023-04-03

6 Package information

Figure 12 IM70A135V01 package drawing Table 6 IM70A135V01 pin configuration Pin Number Name Description

1 VDD Power supply

2 GND Ground

3 Output + Differential Output +

4 Output - Differential Output -

5 GND Ground

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7 Footprint and stencil recommendation

The acoustic port hole diameter in the PCB should be larger than the acoustic port hole diameter of the MEMS microphone to ensure optimal performance. A PCB sound port size of diameter 0.6 mm is recommended. The board pad and stencil aperture recommendations shown in Figure 13 are based on Solder Mask Defined (SMD) pads. The specific design rules of the board manufacturer should be considered for individual design optimizations or adaptations. Figure 13 Footprint and stencil recommendation IM70A135V01 Datasheet Datasheet 11 1.00 2023-04-03

8 Packing information

For shipping and assembly the Infineon microphones are packed in product specific tape-and-reel carriers. A detailed drawing of the carrier can be seen in Figure 14 Figure 14 IM70A135V01 tape and reel packing information Table 7 IM70A135V01 packaging information Product Type code Reel diameter Quantity per reel IM70A135V01 I70A13 13" 5000 IM70A135V01 Datasheet Datasheet 12 1.00 2023-04-03

9 Reflow soldering and board assembly

Infineon MEMS microphones are qualified in accordance with the IPC/JEDEC J-STD-020D-01. The moisture sensitivity level of MEMS microphones is rated as MSL1. For PCB assembly of the MEMS microphone the widely used reflow soldering using a forced convection oven is recommended. The soldering profile should be in accordance with the recommendations of the solder paste manufacturer to reach an optimal solder joint quality. The reflow profile shown in Figure 15 is recommended for board manufacturing with Infineon MEMS microphones. Figure 15 Recommended reflow profile Table 8 Reflow profile limits Profile feature Pb-Free assembly Sn-Pb Eutectic assembly Temperature Min (Tsmin) 150 °C 100 °C Temperature Max (Tsmax) 200 °C 150 °C Time (Tsmin to Tsmax) (ts) 60-120 seconds 60-120 seconds Ramp-up rate (TL to TP) 3 °C/second max. 3 °C/second max. Liquidous temperature (TL) 217 °C 183 °C Time (tL) maintained above TL 60-150 seconds 60-150 seconds Peak Temperature (Tp) 260°C +0°C/-5°C 235°C +0°C/-5°C Time within 5°C of actual peak temperature (tp) 1) 20-40 seconds 10-30 seconds Ramp-down rate 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 8 minutes max. 6 minutes max. 1) Tolerance for peak profile temperature (Tp) is defined as a supplier minimum and a user maximum Note: For further information please consult the 'General recommendation for assembly of Infineon packages' document which is available on the Infineon Technologies web page IM70A135V01 Datasheet Datasheet 13 1.00 2023-04-03

The MEMS microphones can be handled using industry standard pick and place equipment. Care should be taken to avoid damage to the microphone structure as follows:

  • Do not pick the microphone with vacuum tools which make contact with the microphone acoustic port hole.
  • The microphone acoustic port hole should not be exposed to vacuum, this can destroy or damage the MEMS.
  • Do not blow air into the microphone acoustic port hole. If an air blow cleaning process is used, the port hole must be sealed to prevent particle contamination.
  • It is recommended to perform the PCB assembly in a clean room environment in order to avoid microphone contamination.
  • Air blow and ultrasonic cleaning procedures shall not be applied to MEMS Microphones. A no-clean paste is recommended for the assembly to avoid subsequent cleaning steps. The microphone MEMS can be severely damaged by cleaning substances.
  • To prevent the blocking or partial blocking of the sound port during PCB assembly, it is recommended to cover the sound port with protective tape during PCB sawing or system assembly.
  • Do not use excessive force to place the microphone on the PCB. The use of industry standard pick and place tools is recommended in order to limit the mechanical force exerted on the package. IM70A135V01 Datasheet

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10 Reliability specifications

The microphone sensitivity after stress must deviate by no more than 3dB from the initial value. Table 9 Reliability specification Test Abbreviation Test Condition Standard Low Temperature Operating Life L TOL Ta=-40°C, VDD=3.6V, 1000 hours JESD22-A108 Low Temperature Storage Life L TSL Ta=-40°C, 1000 hours JESD22-A119 High Temperature Operation Life HTOL Ta=+125°C, VDD=3.6V, 1000 hours JESD22-A108 High Temperature Storage Life HTSL Ta=+125°C, 1000 hours JESD22-A103 Temperature Cycling PC + TC Pre conditioning MSL-1 JESD22-A113 1000 cycles, -40°C to +125°C, 30 minutes per cycle JESD22-A104 Temperature Humidity Bias PC + THB Pre conditioning MSL-1 JESD22-A113 Ta=+85°C, R.H = 85%, VDD=3.6V, 1000 hours JESD22-A101 Vibration Test VVF 20Hz to 2000Hz with a peak acceleration of 20g in X, Y, and Z for 4 minutes each, total 4 -cycles IEC 60068-2-6 Mechanical Shock MS 10000g/0.1msec direction ±x,y,z, 5 shocks in each direction, 5 shocks in total IEC 60068-2-27 Reflow Solder1) RS 3 reflow cycles, peak temperature = +260°C IPC-JEDEC J-STD-020D-01 Electrostatic Discharge -System Level Test ESD - SL T 3 discharges of ±8kV direct contact to lid while Vdd is supplied according to the operational modes; (Vdd ground is separated from earth ground) IEC-61000-4-2 Electrostatic Discharge - Human Body Model ESD - HBM 1 pulse of ±2kV between all I/O pin combinations JEDEC-JS001 Electrostatic Discharge - Charged Device Model ESD - CDM 3 discharges of ±500V direct contact to I/O pins. JEDEC JS-002 1) The microphone sensitivity must deviate by no more than 1dB from the initial value after 3 reflow cycles. IM70A135V01 Datasheet Datasheet 15 1.00 2023-04-03

10.1 Environmental robustness

Infineon’s latest Sealed Dual Membrane MEMS technology delivers high ingress protection (IP57) at a microphone level. The sealed MEMS design prevents water or dust from entering between membrane and backplate, preventing mechanical blockage or electric leakage issues commonly observed in MEMS microphones. Microphones built with the Sealed Dual Membrane technology can be used to create IP68 devices, requiring only minimal mesh protection. Table 10 Environmental robustness Test Standard Test Condition IP5x dust resistance1) Arizona dust A4 coarse, vertical orientation, sound hole upwards, 10 cycles (15 minutes sedimentation, 6 sec blowing) IPx7 water immersion2) Temporary immersion of 1 meters for 30 minutes. Microphone tested 2 hours after removal 1) The number "5" stands for the dust ingress rating or the capacity to withstand the effects of fine, abrasive dust particles. 2) The "7" specifies the higher water immersion rating. IM70A135V01 Datasheet Datasheet 16 1.00 2023-04-03

Revision history

V1.00 2023-04-03 Initial datasheet IM70A135V01 Datasheet Datasheet 17 1.00 2023-04-03

All referenced product or service names and trademarks are the property of their respective owners. Edition 2023-04-03 Published by Infineon Technologies AG

81726 Munich, Germany

© 2023 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-kll1668087014279 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.