IM66D120A INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Automotive qualification
  • Flat frequency response down to 7 Hz for best ANC performance
  • Close sensitivity and phase matching for optimum beam forming
  • Extended availability to match automotive design cycles
  • Digital PDM output
  • Active THD compensation to reduce distortions at high SPL levels
  • Small 3.5 x 2.65 x 0.98mm 3 surface-mount package Potential applications
  • Active noise cancellation / Road noise cancellation (ANC/RNC)
  • Hands free calling / Voice control
  • Emergency call
  • Siren detection
  • Road condition detection Product validation Qualified for automotive applications. Product validation according to AEC-Q103-003.

Description

The device is designed for applications where low self-noise (high SNR), wide dynamic range, low distortions and a high acoustic overload point are required. The low cut-off frequency (LFRO) makes it a well suited device for active noise cancelling (ANC) applications. Infineon's MEMS technology is based on a miniaturized microphone design and results in high linearity of the output signal within a high dynamic range. With its low equivalent noise floor the microphone is no longer the limiting factor in the audio signal chain and enables higher performance of voice recognition algorithms. The digital microphone ASIC contains a microphone specifc THD compensation algorithm for optimal performance at high sound pressure levels (SPL), an extremely low-noise preamplifier and a high-performance sigma-delta analog-to-digital converter (ADC). The tight manufacturing tolerance, combined with the fact that each device is calibrated with an advanced Infineon calibration algorithm, results in small sensitivity and phase matching tolerances. This makes it well suited for beam forming arrays and multi-microphone applications. Table 1 Product summary Parameter Value Customer benefit SNR 66 dB(A) Improved speech quality and higher speech intelligibility THD 1% 114 dB SPL Clear speech up to high SPL levels AOP (THD 10%) 120 dB SPL Optimized dynamic range for 16-bit audio codecs LFRO 7 Hz Flat frequency response for best ANC performance TA -40°C ... +105°C Flexible placement inside and outside the car Table 2 Order information Product name Package Marking Ordering code IM66D120A PG-TLGA-5-6 IA66D2 SP005926392 IM66D120A Datasheet Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Rev. 1.00 www.infineon.com 2023-11-17

Datasheet 2 Rev. 1.00 2023-11-17

1 Block diagram

The device contains two different dies combined inside one package. The MEMS picks up the sound waves and converts them into an electrical signal. The ASIC contains all needed circuitry for biasing the MEMS and amplifying the MEMS signal to a stable and calibrated microphone output. VOL TAGE REGULATORSMEMS BIAS CHARGE PUMP ASIC MEMS MEMBRANE BACKPLATE GND VDD LRAMP ADC DIGITAL SIGNAL PROCESSING 1-BIT PDM INTERFACE DIGITAL CORE POWER MODE DETECTOR CALIBRATION COEFFICIENTS CLK DATA Figure 1 Block diagram IM66D120A Datasheet Datasheet 3 Rev. 1.00 2023-11-17

2 Pin configuration

The figure below shows the pin configuration of the device Bottom view Figure 2 Pin configuration Table 3 Pin configuration Pin number Name Description

1 VDD Power supply

2 CLK PDM clock input

3 DATA PDM data output

4 LR PDM left/right select

5 GND Ground

Datasheet 4 Rev. 1.00 2023-11-17

3 General product characteristics

3.1 Electrical parameters and characteristics

3.1.1 Absolute maximum ratings

Table 4 Absolute maximum ratings Parameter Symbol Values Unit Note or condition Min. Typ. Max. Storage temperature TS -40 – 125 °C Supply voltage VDD -0.3 – 4.0 V ESD robustness all pins (HBM) VESD_HBM -2 – 2 kV according EIA/JESD22/A114 Attention: Stresses above those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the section "Functional range" of this datasheet is not implied. Furthermore, only single error cases are assumed. More than one stress/error case may also damage the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. During absolute maximum rating overload conditions the voltage on VDD pins with respect to ground (GND) must not exceed the values defined by the absolute maximum ratings. Lifetime statements are an anticipation based on an extrapolation of Infineon’s qualification test results. The actual lifetime of a component depends on its form of application and type of use etc. and may deviate from such statement. Lifetime statements shall in no event extend the agreed warranty period.

3.1.2 Functional range

The following functional range shall not be exceeded in order to ensure correct operation of the device. All parameters specified in the following sections refer to these operating conditions unless otherwise indicated. Table 5 Functional range Parameter Symbol Values Unit Note or condition Min. Typ. Max. Supply voltage VDD 1.62 1.8 3.6 V A 100nF bypass capacitor should be placed close to the microphone's VDD pin to ensure best SNR performance Ambient operating temperature TA -40 – +105 °C VDD ramp-up Time VDD_ru 0.01 – 10 ms Time until VDD ≥ VDD_min Clock Frequency Range - HPM fCLK_HPM 1.2 3.072 3.2 MHz (table continues...) IM66D120A Datasheet Datasheet 5 Rev. 1.00 2023-11-17

Table 5 (continued) Functional range Parameter Symbol Values Unit Note or condition Min. Typ. Max. Clock Frequency Range - Standby mode fCLK_sb – – 320 kHz DATA = high-Z PDM Clock Frequency fCLK 0.45 – 3.2 MHz Clock Duty Cycle CLKduty 45 – 55 % Clock Rise/Fall Time tCR / tCF – – 13 ns Input Logic Low Level VIL -0.3 – 0.28xVDD V Input Logic High Level VIH 0.65xVDD – VDD+0.3 V Hysteresis Vhys 0.08 – – V Output Load Capacitance on DATA Cload – – 200 pF IM66D120A Datasheet Datasheet 6 Rev. 1.00 2023-11-17

4 Product features

4.1 Electrical characteristics

The values in the table "Electrical characteristics" are valid under the following conditions (unless otherwise specified in the table): VDD = 1.8V ± 0.1V, TA = 25°C ± 5°C Table 6 Electrical characteristics Parameter Symbol Values Unit Note or condition Min. Typ. Max. Current Consumption - HPM IDD_HPM – 1100 1400 μA No load on DATA Current Consumption - Standby mode Istandby – 1 5 μA No load on DATA; CLK pulled to GND Short Circuit Current Ishort 1 – 20 mA Grounded DATA pin Power Supply Rejection - Sine PSR1k_NM – -84 – dBFS 100mVpp sine wave on VDD swept from 200Hz to 20kHz Power Supply Rejection - Square PSR217_NM – -84 – dBFS(A) 100mVrms, 217Hz square wave on VDD, A-weighted Startup Time, ±0.5dB sensitivity accuracy tstart-up – 20 ms Time to start up in all operating modes after VDD_min and CLOCK have been applied Startup Time, ±0.2dB sensitivity accuracy tstart-up_HP – – 50 ms Time to start up in all operating modes after VDD_min and CLOCK have been applied Mode Switch Time, ±0.5dB sensitivity accuracy tmode-switch – – 20 ms Time to switch between operating modes. VDD remains on during the mode switch Mode Switch Time, ±0.2dB sensitivity accuracy tmode- switch_HP – – 50 ms Time to switch between operating modes. VDD remains on during the mode switch Output Logic Low Level VOL – – 0.3xVDD V Iout ≤ 2mA Output Logic High Level VOH 0.7xVDD – – V Iout ≤ 2mA Delay Time for DATA Driven tDD 28 – – ns Delay time from CLOCK edge (0.5xVDD) to DATA driven Delay Time for DATA High-Z tHZ 14 – 26 ns Delay time from CLOCK edge (0.5xVDD) to DATA high impedance state 1) Delay Time for DATA Valid tDV – – 100 ns Delay time from CLOCK edge (0.5xVDD) to DATA valid (<0.3xVDD or >0.7xVDD) 2) 1) tHZ is dependent upon Cload IM66D120A Datasheet Datasheet 7 Rev. 1.00 2023-11-17

2) Load on DATA: Cload = 50pF, Rload = 100kΩ

4.1.1 Timing diagram

4.2 Acoustic characteristics

The values in the table "Acoustic characteristics" are valid under the following conditions (unless otherwise specified in the table): VDD = 1.8V ± 0.1V, TA = 25°C ± 5°C, audio bandwidth 20Hz to 20kHz, output unloaded The accoustic performance is dependant on the CLK frequency. All values in the table below are given for the typical CLK frequency of the mode. Table 7 Acoustic characteristics Parameter Symbol Values Unit Note or condition Min. Typ. Max. High performance mode (HPM) Sensitivity SensHPM -27 -26 -25 dBFS 1kHz, 94 dBSPL Signal to noise ratio SNRHPM – 66 – dB(A) A-Weighted Equivalent input noise EINHPM – 28 – dBSPL A-Weighted Total harmonic distortion, 94dBSPL THD94_HPM – 0.1 – % Measuring 2nd to 5th harmonics; 1kHz Total harmonic distortion, 1% THD1%_HPM – 114 – dBSPL Measuring 2nd to 5th harmonics; 1kHz Acoustic overload point (10% THD) AOPHPM – 120 – dBSPL Measuring 2nd to 5th harmonics; 1kHz (table continues...) IM66D120A Datasheet Datasheet 8 Rev. 1.00 2023-11-17

Table 7 (continued) Acoustic characteristics Parameter Symbol Values Unit Note or condition Min. Typ. Max. All power modes Low frequency roll-off point LFRO – 7 – Hz -3dB point relative to 1kHz Phase response, 75Hz Φ75 – 7 – ° Phase response, 1kHz Φ1000 – -4 – ° Phase response, 3kHz Φ3000 – -13 – Group delay, 250Hz tgd_250 – 38 – µs Group delay, 600Hz tgd_600 – 17 – µs Group delay, 1kHz tgd_1000 – 14 – µs Group delay, 4kHz tgd_4000 – 13 – µs Polarity: The device has a positive polarity. Positive pressure increases density of 1's, negative pressure decreases density of 1's in data output. Directivity: The device has an omnidirectional pickup pattern. IM66D120A Datasheet Datasheet 9 Rev. 1.00 2023-11-17

4.2.1 Free field frequency response

The figure below shows the typical free field response of the device. 1 10 100 1000 10000 Normalized output level [dBV] Frequency [Hz] Target min Target max DUT-ES-BE Figure 4 Free field frequency response Table 8 Free field frequency response, normalized to 1kHz sensitivity value Frequency (Hz) Lower limit (dB) Upper limit (dB) 10 -4 0 30 -1.5 1 60 -1 1 100 -1 +1 1000 0 0 5000 -1 +1 10000 -1 +2 IM66D120A Datasheet Datasheet 10 Rev. 1.00 2023-11-17

4.3 Typical performance characteristics

Conditions: VDD = 1.8V ± 0.1V, TA = 25°C ± 5°C, fCLK = 3.072MHz, output unloaded Plot 1: Typical free field response (ultrasonic) Plot 2: I DD vs. V DD Plot 3: Typical THD vs. SPL @ 1kHz Plot 4: Typical THD vs. frequency Plot 5: Typical phase response vs. frequency Plot 6: Typical group delay vs. frequency 1000 1050 1100 1150 1200 1250 1300 I DD [µA] V DD [V] 0 10,000 20,000 30,000 40,000 50,000 Normalized output level [dB] Frequency [Hz] 0.01 0.10 1.00 10.00 90 95 100 105 110 115 120 THD [%] Input sound pressure level [dB SPL] 0.01 0.10 1.00 10.00 10 100 1,000 10,000 THD [%] Frequency [Hz] 119 dB SPL 110 dB SPL 102 dB SPL -50 -40 -30 -20 -10 10 100 1,000 10,000 Phase response [ ° ] Frequency [Hz] 1.0 10.0 100.0 1,000.0 10,000.0 10 100 1,000 10,000 Group delay [µs] Frequency [Hz] Figure 5 Typical performance characteristics IM66D120A Datasheet Datasheet 11 Rev. 1.00 2023-11-17

5 Application information

Note: The following information is given as an example for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device.

5.1 Use cases

  • Flat frequency response with very low LFRO (low frequency roll off point) and small group delay - Best performance for active noise cancellation systems (ANC, RNC, ...) - Excellent speech quality over full frequency range
  • Total harmonic distortion (THD) up to high sound pressure levels (SPL) - Clear speech in a wide dynamic range - Reliable voice commands even with high background noise - Improved ANC system performance in loud environments
  • High acoustic overload point (AOP) - Distortion less output signal even in loud environments
  • High signal to noise ratio (SNR) - Far field audio signal pick-up - Low volume audio and whispered voice capturing - Good performance with speech recognition algorithms - Microphone noise is no longer limiting the audio chain
  • Close sensitivity and phase matching - Good performance in audio beamforming - High and precise attenuation of background noise - Full utilization of voice algorithms capability IM66D120A Datasheet

Datasheet 12 Rev. 1.00 2023-11-17

5.2 Typical application circuit

Figure 6 Typical application circuit Note: For best performance it is strongly recommended to place a 100nF (C VDD_typical) capacitor between VDD and ground. The capacitor should be placed as close to VDD as possible. A termination resistor (RTERM) of about 100Ω may be added to reduce the ringing and overshoot on the output signal. Note: This figure is a simplified example of an application circuit. The function must be verified in the application. IM66D120A Datasheet Datasheet 13 Rev. 1.00 2023-11-17

6 Package information

This product is compliant to RoHS

6.1 Package outline

The drawing is in compliance with ISO 128-30, Projection Method 1 [ ]All dimensions are in units mmDrawing according to ISO 8015, general tolerances ISO 2768-mK 2.65±0.08 3.5±0.08 (0.25) 0.98±0.1 0.822 0.5224× 0.13±0.08 1.252 (2.48) (3.33) Ø1.025Ø1.63 Ø0.325 Pin1 markingSeating plane Pcb thicknessincluding solder mask Bottom view Figure 7 Package outline drawing IM66D120A Datasheet Datasheet 14 Rev. 1.00 2023-11-17

6.2 Footprint and stencil recommendation

The acoustic port hole diameter in the PCB should be larger than the acoustic port hole diameter of the MEMS microphone to ensure optimal performance. A PCB sound port size of radius 0.3 mm (diameter 0.6mm) is recommended. The board pad and stencil aperture recommendations shown in the figure below are based on solder mask defined (SMD) pads. The specific design rules of the board manufacturer should be considered for individual design optimizations or adaptations. All dimensions are in units mm copper solder maskstencil apertures All undimensioned radii are 0.1 Pin1 All pads are non-solder mask defined 0.8380.754× 0.634× 0.838 0.544× 0.710.5420.822 0.710.5420.822 0.474× 110° 0.12 R0.54R0.83 Ø1.725 Ø0.985 Ø0.6 Figure 8 Foot print and stencil recommendation IM66D120A Datasheet Datasheet 15 Rev. 1.00 2023-11-17

6.3 Reflow soldering and board assembly

Infineon MEMS microphones are qualified in accordance with the IPC/JEDEC J-STD-020D-01. The moisture sensitivity level of MEMS microphones is rated as MSL1. For PCB assembly of the MEMS microphone the widely used reflow soldering, using a forced convection oven, is recommended. The soldering profile should be in accordance with the recommendations of the solder paste manufacturer to reach an optimal solder joint quality. The reflow profile shown in the figure below is recommended for board manufacturing with Infineon MEMS microphones. Figure 9 Recommended reflow profile Table 9 Reflow profile limits Profile feature Symbol Pb-free assembly Sn-Pb Eutectic assembly Preheat temperature min. Tsmin 150°C 100°C Preheat temperature max. Tsmax 200°C 150°C Preheat time (Tsmin to Tsmax) ts 60-120 seconds 60-120 seconds Ramp-up rate (TL to TP) – 3°C/second max. 3°C/second max. Liquidous temperature TL 217°C 183°C Time maintained above TL tL 60-150 seconds 60-150 seconds Peak temperature TP 260°C +0°C/-5°C 235°C +0°C/-5°C Time within 5°C of actual peak temperature (see note below) tP 20-40 seconds 10-30 seconds Ramp-down rate – 6°C/second max. 6°C/second max. Time 25°C to peak temperature t 8 minutes max. 6 minutes max. Note: Tolerance for peak profile temperature (T p) is defined as a supplier minimum and a user maximum. IM66D120A Datasheet Datasheet 16 Rev. 1.00 2023-11-17

The MEMS microphones can be handled using industry standard pick and place equipment. Care should be taken to avoid damage to the microphone structure as follows:

  • Do not pick the microphone with vacuum tools which make contact with the microphone acoustic port hole.
  • The microphone acoustic port hole should not be exposed to vacuum. This can destroy or damage the MEMS.
  • Do not blow air into the microphone acoustic port hole. If an air blow cleaning process is used, the port hole must be sealed to prevent particle contamination.
  • It is recommended to perform the PCB assembly in a clean room environment in order to avoid microphone contamination.
  • Air blow and ultrasonic cleaning procedures shall not be applied to MEMS Microphones. A no-clean paste is recommended for the assembly to avoid subsequent cleaning steps. The microphone MEMS can be severely damaged by cleaning substances.
  • To prevent the blocking or partial blocking of the sound port during PCB assembly, it is recommended to cover the sound port with protective tape during PCB sawing or system assembly.
  • Do not use excessive force to place the microphone on the PCB. The use of industry standard pick and place tools is recommended in order to limit the mechanical force exerted on the package. Note: For further information please consult the "General recommendation for assembly of Infineon packages" document, which is available on the Infineon Technologies web page.

6.4 Packing

For shipping and assembly the Infineon microphones are packed in product specific tape-and-reel carriers. A detailed drawing of the carrier can be seen in the figure below. The drawing is in compliance with ISO 128-30, Projection Method 1 [ ]All dimensions are in units mm 2.9 3.75 5.512 0.3 1.2Pin1 marking Figure 10 Tape dimensions More information can be found on the Infineon website: https://www.infineon.com/cms/en/product/packages/PG-TLGA/PG-TLGA-5-6/ IM66D120A Datasheet Datasheet 17 Rev. 1.00 2023-11-17

7 Reliability specifications

The microphone sensitivity after stress and over temperature does not deviate by more than +/- 3dB from the initial value. Table 10 Qualification tests according to AEC-Q103-003 Test Stress condition Standard Temperature humidity bias (THB) TA = +85°C, R.H. = 85%, VDD = 3.6V, cyclical bias, 1000 hours AEC Q100 Rev.H. Temperature humidity storage (THS) TA = +85°C, R.H = 85%, 1000 hours AEC Q100 Rev.H. Temperature cycling (TC) TA = -55°C ... +125°C, 30 min cycle time, 1000cycles AEC Q100 Rev.H. High temperature storage life (HTSL) TA = +125°C, 1000 hours AEC Q100 Rev.H. High temperature operating life (HTOL) TA = +125°C, VDD = 3.6V, 1000 hours AEC Q100 Rev.H. Early life failure rate (ELFR) TA = +125°C, VDD = 3.6V, 48 hours AEC Q100-008, JESD22-A108 Mechanical shock (MS) 3 pulses, 0.2msec duration, 10,000g peak acceleration in x,y and z planes JESD22-B104 Variable frequency vibration (VFV) 20Hz to 2kHz to 20Hz (logarithmic variation) in 12 minutes, 4x in each orientation, 20g peak acceleration JESD22-B103 Package drop (DROP) 10x on each of 6 axes (60 drops total) from a high of 1.2m onto a concrete surface AEC Q100 Rev.H. Humidity and temperature cycle (HTC) 5 cycles (24h/cycle) AEC Q103-003, JESD22-A108, IEC 60068-2-2, Test-BA Low temperature operating life (L TOL) TA = -40°C, VDD = 3.6V, 1000 hours JESD22-A108, IEC 60068-2-2, Test-AA Low temperature storage (L TS) TA = -40°C, 1000 hours JESD22-A108, IEC 60068-2-2, Test-AA Endurance life test (EL T) 96 hours at 130dB continuous signal AEC Q103-003 Maximum pressure test (MPT) 160 dBSPL AEC Q103-003 Electrostatic discharge, Human body model (HBM) all pins, VESD = ±2000V AEC Q100-002 Electrostatic discharge, Charged device model (CDM) all pins, VESD = ±500V AEC Q100-011 Latch-up TA = 105°C, I = ±100mA AEC Q100 Rev.H. Electromagnetic compatibility (EMC) IC strip line radiated emissions SAE J1752/3 – Radiated Emissions (table continues...) IM66D120A Datasheet Datasheet 18 Rev. 1.00 2023-11-17

Table 10 (continued) Qualification tests according to AEC-Q103-003 Test Stress condition Standard Wire bond shear – AEC Q100-001, AEC Q003 Wire bond pull – MIL-STD883 Method 2011, AEC Q003 Die shear – MIL-STD-883 Method 2019 Solderability – JESD22-B102 Physical dimensions – JESD22-B100 and B108, AEC Q003 Acoustic characterization Measurement of acoustic parameters over full voltage and temperature range Table 11 Additional tests for use in automotive applications Test Stress condition Standard Electrostatic discharge, SL T - Contact discharge 3 contact discharges of ±6kV to lid while VDD is supplied according to the operational modes; VDD ground is separated from earth ground IEC-61000-4-2 Electrostatic discharge, SL T - Air discharge 3 air discharges of ±8kV to lid while VDD is supplied according to the operational modes; VDD ground is separated from earth ground IEC-61000-4-2 IM66D120A Datasheet Datasheet 19 Rev. 1.00 2023-11-17

8 Revision history

Date of release Description of changes 1.00 2023-11-17 • Initial release IM66D120A Datasheet Datasheet 20 Rev. 1.00 2023-11-17

All referenced product or service names and trademarks are the property of their respective owners. Edition 2023-11-17 Published by Infineon Technologies AG

81726 Munich, Germany

© 2023 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-arc1697519482552 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.