IM241 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 26
Technical content
Features
- 600V 3-phase inverter including gate drivers & bootstrap function
- Reverse Conducting IGBT Gen 2 (RCD2) optimized for motor drives
- Temperature monitor
- Accurate overcurrent shutdown (±5%)
- Fault reporting and programmable fault clear
- Advanced input filter with shoot-through protection
- Optimized dV/dt for loss and EMI trade offs
- Open-emitter for single and leg-shunt current sensing
- 3.3V logic compatible
- Isolation 2000VRMS, 1min SOP 29x12 DIP 29x12 Potential Applications
- Fans
- Pumps Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Table 1 Product Information Base Part Number Package Type Standard Pack Form Quantity IM241-S6T2y DIP 29x12 Tube 240 IM241-S6S1y SOP 29x12 Tube 240 Tape & Reel 500 y = B (fast speed for low losses; for x = S, M, L) or J (slow speed for low EMI; for x = S, M)
Final Datasheet 2 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Table of contents Table of contents Description 1 Features 1
Final Datasheet 3 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Internal Electrical Schematic
1 Internal Electrical Schematic
1 VSS
2 VB(U)
3 VDD1
4 HIN(U)
5 LIN(U)
6 RFE
7 VB(V)
8 VDD2
9 HIN(V)
10 LIN(V)
11 VTH
12 VB(W)
13 VDD3
14 HIN(W)
15 LIN(W)
16 ITRIP
18 U/VS(U)
21 V/VS(V)
23 W/VS(W)
Figure 1 Internal electrical schematic.
Final Datasheet 4 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Pin Configuration
2 Pin Configuration
2.1 Pin Assignment
e 16 23 Figure 2 Module pinout Table 2 Pin Assignment Pin Name Description
1 VSS Logic ground
2 VB(U) U-phase high-side floating IC supply voltage
3 VDD1 Low-side control supply 1
4 HIN(U) U-phase high-side gate driver input
5 LIN(U) U-phase low-side gate driver input
6 RFE RCIN / Fault / Enable
7 VB(V) V-phase high-side floating IC supply voltage
8 VDD2 Low-side control supply 2
9 HIN(V) V-phase high-side gate driver input
10 LIN(V) V-phase low-side gate driver input
11 VTH Thermistor output
12 VB(W) W-phase high-side floating IC supply voltage
13 VDD3 Low-side control supply 3
14 HIN(W) W-phase high-side gate driver input
15 LIN(W) W-phase low-side gate driver input
16 ITRIP Over-current protection input
17 P DC bus voltage positive
18 U/VS(U) Motor U-phase output, U-phase high-side floating IC supply offset voltage
19 NU U-phase low-side emitter
20 NV U-phase low-side emitter -phase low-side emitter
21 V/VS(V) Motor V-phase output, V-phase high-side floating IC supply offset voltage
22 NW W-phase low-side emitter
23 W/VS(W) Motor W-phase output, W-phase high-side floating IC supply offset voltage
Final Datasheet 5 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Pin Configuration
2.2 Pin Descriptions
HIN(U,V,W) and LIN(U,V,W) (Low side and high side control pins) These pins are positive logic and they are responsible for the control of the integrated IGBT . The Schmitt -trigger input threshold s of them are such to guarantee LSTTL and CMOS compatibility down to 3.3V controller outputs. Pull -down resistor of about 800k is internally provided to pre -bias inputs during supply start -up and an ESD diode is provided for pin protection purposes. Input Schmitt-trigger and noise filter provide beneficial noise rejection to short input pulses. The noise filter suppresses control pulses which are below the filter time TFILIN. The filter acts according to Figure 4. CIPOSTM INPUT NOISE FILTER M8.0 Schmitt-Trigger SWITCH LEVEL VIH; VILCOM HINx LINx Figure 3 Input pin structure HIN LIN HO LOlow high tFILIN tFILINa) b) HIN LIN HO LO Figure 4 Input filter timing diagram The integrated gate drive provides additionally a shoot through prevention capability which avoids the simultaneous on-state of the high-side and low- side switch of the same inverter phase. A minimum deadtime insertion of typically 3 00ns is also provided by driver IC, in order to reduce cross - conduction of the external power switches. VDDX, VSS (Low side control supply and reference) VDD is the control supply and it provides power both to input logic and to the output power stage. Input logic is referenced to VSS ground. The under -voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 11.1V is present. The IC shuts down all the gate drivers power outputs, when the VDD supply voltage is below VDDUV- = 10.9V. This prevents the external power switches from critically low gate voltage levels during on-state and therefore from excessive power dissipation. VB (U,V,W) and VS (U,V,W) (High side supplies) VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the external high side power device source voltage. Due to the low power consumption, the floating driver stage is supplied by integrated bootstrap circuit. The under-voltage detection operates with a rising supply threshold of typical VBSUV+ = 11.1V and a falling threshold of VBSUV- = 10.9V. VS(U,V,W) provide a high robustness against negative voltage in respect of VSS. This ensures very stable designs even under rough conditions. NU, NV, NW (Low side emitters) The low side emitters are available for current measurements of each phase leg. It is recommended to keep the connection to pin VSS as short as possible in order to avoid unnecessary inductive voltage drops. VTH (Thermistor output) A UL certified NTC resistor is integrated i n the module with one terminal of the chip connected to VSS and the other to VTH. When pulled up to a rail voltage such as VDD or 3.3V by a resistor, the VTH pin provides an analog voltage signal corresponding to the temperature of the thermistor. RFE (RCIN / Fault / Enable) The RFE pin combines 3 functions in one pin: RCIN or RC-network based programmable fault clear timer, fault output and enable input. The RFE pin is normally connected to an RC network on the PCB per the schematic in Figure 5. Under normal operating conditions, RRCIN pulls the RFE pin to 3.3V, thus enabling all the functions in the IPM. The microcontroller can pull this pin low to disable the IPM functionality. This is is the Enable function.
Final Datasheet 6 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Pin Configuration Figure 5 Typical PCB circuit connected to the RFE pin The Fault function allows t he IPM to report a Fault condition to the microncontroller by pulling the RFE pin low in one of two situations. The first is an under- voltage condition on V DD and the second is when the ITRIP pin sees a voltage rising above VIT,TH+. The programmable fault clear timer function provides a means of automatically re -enabling the module operation a preset amount of time (TFLT-CLR) after the fault condition has disappeared. Figure 6 shows the RFE -related circuit block diagram inside the IPM. The length of TFLT -CLR can be determined by using the formula below. VRFE(t) = 3.3V * (1 – e-t/RC) TFLT-CLR = -RRCIN * CRCIN * ln(1-VRFE +/3.3V) For example, if RRCIN is 1.2MΩ and CRCIN is 1nF, the TFLT- CLR is about 1.7ms with VRFE + of 2.2V. It is also important to note that C RCIN needs to be minimized in order to make sure it is fully discharged in case of over current event. Since the I TRIP pin has a 500ns input filter, it is appropriate to ensure that C RCIN will be discharged below VRFE- by the open -drain MOSFET, after 350ns. Therefore, the max CRCIN can be calculated as: VRFE(t) = 3.3V * e-t/RC < VRFE- CRCIN < 350ns / ( - ln (VRFE- / 3.3V) * RRFE_ON) Consider V RFE- of 0.8V and R RFE_ON of 50ohm, C RCIN should be less than 5nF. It is also suggested to use a RRCIN of between 0.5MΩ and 2MΩ. Figure 6 RFE internal circuit structure U/VS(U) , V/V S(V), W/V S(W) (High side emitter and low side collector) These pins are connected to motor U, V, W input pins. P (Positive bus input voltage) The high side IGBTs are connected to the bus voltage. It is noted that the bus voltage should not exceed 450V. Input Noise filter Input Noise filter Deadtime & Shoot-Through Prevention ITRIP Noise filter HIN LIN COM ITRIP RFE Noise filter VDD Under- voltage detection +3.3V RRCIN CRCIN
Final Datasheet 7 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Absolute Maximum Rating
3 Absolute Maximum Rating
3.1 Module
Parameter Symbol Condition Units Storage temperature TSTG -40 ~ 150 °C Operating case temperature TC -40 ~ 125 °C Operating junction temperature TJ -40 ~ 150 °C Isolation test voltage VISO 1min, RMS, f = 60Hz 2000 V
3.2 Inverter
Parameter Symbol Condition Units Max. blocking voltage VCES/VRRM 600 V Output current IO TC = 25° C 2 A Peak output current IOP TC = 25° C, tp < 1ms 3 A Peak power dissipation per IGBT Ptot TC = 25° C 9 W Short circuit withstand time TSC VDD=15V, VDC ≤400V, TJ=150° C Allowed number of short circuits: <1000, time between short circuit: ≥ 1s 3 µs
3.3 Control
Parameter Symbol Condition Units Low side control supply voltage VDD -0.3 ~ 20 V Input voltage VIN LIN, HIN,ITRIP,RFE -0.3 ~ VDD V High side floating supply voltage (VB reference to VS) VBS -0.3 ~ 20 V
Final Datasheet 8 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Thermal Characteristics
4 Thermal Characteristics
Parameter Symbol Conditions Min. Typ. Max. Units Single IGBT thermal resistance, junction- case RTH(J-C) Low side V- phase IGBT - 11.3 13.6 K/W Single diode thermal resistance, junction- case RTH(J-C) Low side V- phase Diode - 12.8 15.4 K/W
Final Datasheet 9 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Recommended Operating Conditions
5 Recommended Operating Conditions
Parameter Symbol Min. Typ. Max. Units Positive DC bus input voltage P - - 450 V Low side control supply voltage VDD 13.5 - 16.5 V High side floating supply voltage VBS 12.5 - 17.5 V Input voltage (LIN,HIN,ITRIP,RFE) VIN 0 - 5 V PWM carrier frequency FPWM - 20 - kHz External dead time between HIN & LIN DT 1 - - µs Voltage between VSS and N(U,V,W) VCOMP -5 - 5 V Minimum input pulse width PWIN(ON), PWIN(OFF) 1 - - µs
Final Datasheet 10 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Static Parameters
6 Static Parameters
6.1 Inverter
(VDD-VSS) = (VB - VS) = 15 V. TC = 25°C unless otherwise specified. Table 8 IM241-S6 (B and J type) Parameter Symbol Conditions Min. Typ. Max. Units Collector-to-emitter saturation voltage VCE(sat) IC = 0.2A - 1.18 - V IC = 0.5A - 1.55 1.78 V Collector emitter leakage current of high side IGBT ILKH VIN = 0V, V+ = 600V - - 80 µA VIN = 0V, V+ = 600V, TJ = 150° C - 10.7 - µA Diode forward voltage VF IC = 0.2A - 1.23 - V IC = 0.5A - 1.53 1.77 V
6.2 Control
(VDD- VSS) = (VB - VS) = 15 V. TC = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels. The VDDUV parameters are referenced to VSS. The VBSUV parameters are referenced to VS. Table 9 Parameter Symbol Min. Typ. Max. Units Logic “1” input voltage (LIN, HIN) VIN,TH+ 2.2 - - V Logic “0” input voltage (LIN, HIN) VIN,TH- - - 0.8 V VDD/VBS supply undervoltage, positive going threshold VDD,UV+, VBS,UV+ 10.6 11.1 11.6 V VDD/VBS supply undervoltage, negative going threshold VDD,UV-, VBS,UV- 10.4 10.9 11.4 V VDD/VBS supply undervoltage lock-out hysteresis VDDUVH, VBSUVH - 0.2 - V RFE positive going threshold VRFE+ - 1.9 2.2 V RFE negative going threshold VRFE- 0.8 1.1 - V ITRIP positive going threshold VIT,TH+ 0.475 0.500 0.525 V ITRIP negative going threshold VIT,TH- - 0.430 - V ITRIP input hysteresis VIT,HYS - 0.07 - V Quiescent VBS supply current IQBS - - 70 µA Quiescent VDD supply current per channel IQDD - - 3 mA Input bias current VIN=5V for LIN, HIN IIN+ - 6.25 12.5 µA Input bias current VIN=5V for RFE IIN,RFE+ - - 1 µA
Final Datasheet 11 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Static Parameters Parameter Symbol Min. Typ. Max. Units Input bias current VIN=5V for ITRIP IITRIP+ - 5 20 µA Bootstrap resistance RBS - 200 - Ω RFE low on resistance RRFE - 34 60 Ω
Final Datasheet 12 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Dynamic Parameters
7 Dynamic Parameters
7.1 Inverter
(VDD- VSS) = (VB - VS) = 15 V. TC = 25°C unless otherwise specified. Table 10 IM241-S6, B Type Parameter Symbol Conditions Min. Typ. Max. Units Input to output turn-on propagation delay TON IC = 0.5A, V+ = 300V - 492 - ns Turn-on rise time TR - 6.10 - ns Turn-on switching time TC(on) - 49.7 - ns Input to output turn-off propagation delay TOFF IC = 0.5A, V+ = 300V - 710 - ns Turn-off fall time TF - 132 - ns Turn-off switching time TC(off) - 124 - ns RFE low to six switch turn-off propagation delay TEN VIN=0 or VIN=5V, VRFE=5V - 420 - ns ITRIP to six switch turn-off propagation delay TITRIP V+ = 300V,no cap on RFE - 1.3 - µs Turn-on slew rate dV / dt IC = 0.5A, V+ = 300V, VDD = 15V, L = 6mH, mean of high side and low side - 6.98 - V/ns Turn-on switching energy EON IC = 0.5A, V+ = 300V, VDD = 15V, L = 6mH, mean of high side and low side - 9.91 - µJ Turn-off switching energy EOFF - 7.31 - Diode reverse recovery energy EREC - 7.56 - Diode reverse recovery time TRR - 71.8 - ns Turn-on switching energy EON IC = 0.5A, V+ = 300V, VDD = 15V, L = 6mH TJ = 150° C, mean of high side and low side - 18.6 - µJ Turn-off switching energy EOFF - 10.8 - Diode reverse recovery energy EREC - 13.1 - Diode reverse recovery time TRR - 116 - ns Table 11 IM241-S6, J Type Parameter Symbol Conditions Min. Typ. Max. Units Input to output turn-on propagation delay TON IC = 0.5A, V+ = 300V - 555 - ns Turn-on rise time TR - 14.8 - ns Turn-on switching time TC(on) - 160 - ns Input to output turn-off propagation delay TOFF IC = 0.5A, V+ = 300V - 809 - ns Turn-off fall time TF - 138 - ns
Final Datasheet 13 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Dynamic Parameters Parameter Symbol Conditions Min. Typ. Max. Units Turn-off switching time TC(off) - 126 - ns RFE low to six switch turn-off propagation delay TEN VIN=0 or VIN=5V, VRFE=5V - 470 - ns ITRIP to six switch turn-off propagation delay TITRIP V+ = 300V,no cap on RFE - 1.3 - µs Turn-on slew rate dV / dt IC = 0.5A, V+ = 300V, VDD = 15V, L = 6mH, mean of high side and low side - 1.91 - V/ns Turn-on switching energy EON IC = 0.5A, V+ = 300V, VDD = 15V, L = 6mH, mean of high side and low side - 20.0 - µJ Turn-off switching energy EOFF - 7.49 - Diode reverse recovery energy EREC - 5.77 - Diode reverse recovery time TRR - 164 - ns Turn-on switching energy EON IC = 0.5A, V+ = 300V, VDD = 15V, L = 6mH TJ = 150° C, mean of high side and low side - 34.8 - µJ Turn-off switching energy EOFF - 10.6 - Diode reverse recovery energy EREC - 9.47 - Diode reverse recovery time TRR - 258 - ns
7.2 Control
(VDD- VSS) = (VB - VS) = 15V. TC = 25°C unless otherwise specified. Table 12 Parameter Symbol Conditions Min. Typ. Max. Units Input filter time (HIN, LIN) TFIL,IN VIN = 0 or VIN = 5V - 300 - ns Input filter time (ITRIP) TFIL,ITRIP VIN=0 or VIN=5V - 500 - ns Internal dead time DTIC VIN = 0 or VIN = 5V - 300 - ns Matching propagation delay time (on and off) for same phase high-side and low-side MT External dead time > 500ns - - 50 ns
Final Datasheet 14 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Thermistor Characteristics
8 Thermistor Characteristics
Parameter Symbol Conditions Min. Typ. Max. Units Resistance R25 TC = 25° C, ±5% tolerance 44.65 47 49.35 kΩ Resistance R125 TC = 125° C 1.27 1.39 1.51 kΩ B-constant (25/100) B ±1% tolerance - 4006 - K Temperature Range -20 - 150 °C Figure 7 Thermistor resistance – temperature curve, for REXT=9.76kΩ, and thermistor resistance variation with temperature. +3.3V REX T R VTH 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Thermistor Pin Readout Voltage VTH (V) Thermistor Temperature TTH (°C) max typ min TTH [℃] Rmin [kΩ] Rtyp [kΩ] Rmax [kΩ] 50 15.448 16.432 17.436 60 10.483 11.194 11.924 70 7.245 7.765 8.302 80 5.092 5.477 5.876 90 3.648 3.937 4.237 100 2.653 2.872 3.101 110 1.957 2.125 2.301 120 1.462 1.592 1.729 125 1.269 1.384 1.505
Final Datasheet 15 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Mechanical Characteristics and Ratings
9 Mechanical Characteristics and Ratings
Parameter Symbol Conditions Min. Typ. Max. Units Comparative Tracking Index CTI 550 - - V Curvature of module backside BC See Figure 9 -50 - 50 µm Mounting Torque τ M3 screw & washer, thermal grease 0.4 0.8 1.2 Nm M3 screw & washer, SIL-PAD 1500ST - 0.6 1.0 Nm Weight W - 3 - g
Final Datasheet 16 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Qualification Information
10 Qualification Information
UL Certification UL-US-L252584-15-22508102-2 Moisture sensitivity level (SOP 29 x 12 only) MSL3 RoHS Compliant Yes ESD Human body model 1C Charge discharge model C3
Final Datasheet 17 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Diagrams & Tables
11 Diagrams & Tables
11.1 TC Measurement Point
10.15 mm 4.05 mm Figure 8 TC measurement point
11.2 Backside Curvature Measurement Points
Figure 9 Curvature measurement points
Final Datasheet 18 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Diagrams & Tables
11.3 Input-Output Logic Table
HIN U,V,W (4,9,14) (5,10,15) LIN U,V,W ITRIP RFE (6) (16) (18,21,23) U,V,W HO LO Figure 10 Module block diagram Table 16 RFE ITRIP HIN U,V,W LIN U,V,W U,V,W 1 0 1 0 V+ 1 0 0 1 0 1 0 0 0 ‡ 1 0 1 1 ‡ 1 1 x x ‡ 0 x x x ‡ ‡ Voltage depends on direction of phase current
Final Datasheet 19 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Diagrams & Tables
11.4 Switching Time Definitions
0.9V 2.1V 90% 10%10% 10% 90% toff tf ton tr tc(off) tc(on) 10% trr 10% Figure 11 Switching times definition Figure 12 ITRIP time waveform Figure 13 Output disable timing diagram RFE 50% 50% U, V, W TEN ITRIP LIN(U, V, W) HIN(U, V, W) TFLT-CLR 50% 50% U, V, W 50% TITRIP 50% RFE 50% TFLT
Final Datasheet 20 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Application Guide
12.1 Typical Application Schematic
NW (20) NV (21) W (23) V (24) U (25) P (26) (2) VB(U) (17) LIN (W) (16) LIN (V) (12) RFE (13) HIN (U) (14) HIN (V) (15) LIN (U ) (4) VB(V) (6) VB(W) VDD (9) VSS (1) VS(U) (3) VS(V) (5) VS(W) NU (22) HIN (V) HIN (U) RFE LIN (V) LIN (W) LO3 LO2 LO1 HO1 HO2 HO3 VB1 VS(U) VS(V) VS(W) VSS VDD Micro Controller #10 #6 #7 3-ph AC Motor Power GND line Control GND line (11) ITRIP RC-IGBT RC-IGBT VB2 VB3 RC-IGBT RC-IGBT RC-IGBT RC-IGBT ITRIP VTH (14) HIN (W) HIN (W) LIN (U ) 5 or 3.3V 15V 5 or 3.3V Figure 14 Application schematic
Final Datasheet 21 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Application Guide
12.2 TJ vs TTH
Figure 15 Typical TJ vs TTH correlation without heatsink (AN-2021-08 for reference) Figure 16 Typical TJ vs TTH correlation with heatsink and Rthc-amb = 7 K/W (AN-2021-08 for reference)
Final Datasheet 22 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Application Guide 12.3 –VS Immunity Figure 17 Negative transient Vs SOA for integrated gate driver -60 -50 -40 -30 -20 -10 0 100 200 300 400 500 Time (ns) VS (V)
Final Datasheet 23 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Package Outline
13.1 DIP 29x12
Final Datasheet 24 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series Package Outline
13.2 SOP 29x12
Final Datasheet 25 Revision 1.6 www.infineon.com 2022-06-26 CIPOS™ Micro IM241 Series
Revision History
Major changes since the last revision Page or Reference Description of change
81726 München, Germany
© 2022 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: erratum@infineon.com Document reference IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabiliti es of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this do cument and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies o ffice (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. Edition 2022-06-26 Trademarks All referenced product or service names and trademarks are the property of their respective owners.