ILD621GB-X007

ILD621_07 VISHAY | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 10

Technical content

Document Number: 83654 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 20-Dec-07 1 Optocoupler, Phototransistor Output (Dual, Quad Channel) ILD621/ILD621GB/ILQ621/ILQ621GB Vishay Semiconductors

DESCRIPTION

The ILD621/ILQ621 and ILD621GB/ILQ621GB are multi-channel phototransisto r optocouplers that use GaAs IRLED emitters and high gain NP N silicon phototransistors. These devices are constructed using double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC. The ILD621/ILQ621GB is well suited for CMOS interfacing given the CTR CEsat of 30 % minimum at I F of 1.0 mA. High gain linear operation is guaranteed by a minimum CTRCE of 100 % at 5.0 mA. The ILD/ Q621 has a guaranteed CTR CE 50 % minimum at 5.0 mA. The transparent ion shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC V IO voltages are present.

FEATURES

• Alternate source to TLP621-2/-4 and TLP621GB-2/-4  High collector emitter voltage, BV CEO = 70 V  Dual and quad packages feature: - Lower pin and parts count - Better channel to channel CTR match - Improved common mode rejection  Isolation test voltage, 5300 V RMS  Lead (Pb)-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS  UL1577, file no. E52744 system code H or J, double protection  DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1  BSI IEC 60950; IEC 60065 F I M K O i179054 E C C E A C C A A C C A A C C A E C C E E C C E Dual Channel Quad Channel ORDER INFORMATION PART REMARKS ILD621 CTR > 50 %, dual, DIP-8 ILD621GB CTR > 100 %, dual, DIP-8 ILQ621 CTR > 50 %, quad, DIP-16 ILQ621GB CTR > 100 %, quad, DIP-16 ILD621-X006 CTR > 50 %, dual, DIP-8 400 mil

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83654 2 Rev. 1.5, 20-Dec-07 ILD621/ILD621GB/ILQ621/ILQ621GB Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) Note For additional information on the available options refer to option information. Notes (1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause per manent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ILD621-X007 CTR > 50 %, dual, SMD-8 (option 7) ILD621-X009 CTR > 50 %, dual, SMD-8 (option 9) ILD621GB-X007 CTR > 100 %, dual, SMD-8 (option 7) ILQ621-X006 CTR > 50 %, quad, DIP-16 400 mil ILQ621-X007 CTR > 50 %, quad, SMD-16 (option 7) ILQ621-X009 CTR > 50 %, quad, SMD-16 (option 9) ILQ621GB-X006 CTR > 100 %, quad, DIP-16 400 mil ILQ621GB-X007 CTR > 100 %, quad, SMD-16 (option 7) ILQ621GB-X009 CTR > 100 %, quad, SMD-16 (option 9) ORDER INFORMATION PART REMARKS ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage VR 6.0 V Forward current IF 60 mA Surge current IFSM 1.5 A Power dissipation Pdiss 100 mW Derate from 25 °C 1.33 mW/°C OUTPUT Collector emitter reverse voltage V ECO 70 V Collector current IC 50 mA t < 1.0 ms I C 100 mA Power dissipation Pdiss 150 mW Derate from 25 °C - 2.0 mW/°C COUPLER Isolation test voltage t = 1.0 s V ISO 5300 V RMS ILD621GB 400 mW Derate from 25 °C 5.33 mW/°C ILQ621GB 500 mW Derate from 25 °C 6.67 mW/°C Creepage distance ≥ 7.0 mm Clearance distance ≥ 7.0 mm Isolation resistance VIO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Junction temperature Tj 100 °C Soldering temperature (2) 2.0 mm from case bottom T sld 260 °C

Document Number: 83654 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 20-Dec-07 3 ILD621/ILD621GB/ILQ621/ILQ621GB Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are test ing requirements. Typical values are characteri stics of the device and are the result of eng ineering evaluation. Typical values are for information only and are not part of the testing requirements.

ELECTRICAL CHARACTERISTICS

MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 10 mA V F 1 . 01 . 1 51 . 3 V Reverse current V R = 6.0 V I R 0.01 10 µA Capacitance V R = 0 V, f = 1.0 MHz C O 40 pF Thermal resistance, junction to lead R THJL 750 K/W OUTPUT Collector emitter capacitance V CE = 5.0 V, f = 1.0 MHz C CE 6.8 pF Collector emitter leakage current V CE = 24 V ICEO 10 100 nA ICEO 20 50 µA Thermal resistance, junction to lead R THJL 500 K/W COUPLER Capacitance (input to output) V IO = 0 V, f = 1.0 MHz C IO 0.8 pF Insulation resistance V IO = 500 V 10 12 Ω Channel to channel insulation 500 VAC Collector emitter saturation voltage IF = 8.0 mA, ICE = 2.4 mA ILD621 VCEsat 0.4 VILQ621 IF = 1.0 mA, ICE = 0.2 mA ILD621GB VCEsat 0.4 VILQ621GB CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Channel/channel CTR match IF = 5.0 mA, VCE = 5.0 V CTRX/ CTRY 1 to 1 3 to 1 % Current transfer ratio (collector emitter saturated) I F = 1.0 mA, VCE = 0.4 V ILD621 CTR CEsat 60 % ILQ621 CTR CEsat 60 % ILD621GB CTR CEsat 30 % ILQ621GB CTR CEsat 30 % Current transfer ratio (collector emitter) IF = 5.0 mA, VCE = 5.0 V ILD621 CTR CE 50 80 600 % ILQ621 CTR CE 50 80 600 % ILD621GB CTR CE 100 200 600 % ILQ621GB CTR CE 100 200 600 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT NON-SATURATED On time I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP ton 3.0 µs Rise time I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tr 2.0 µs Off time I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP toff 2.3 µs Fall time I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tf 2.0 µs Propagation H to L I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tPHL 1.1 µs Propagation L to H I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tPLH 2.5 µs

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83654 4 Rev. 1.5, 20-Dec-07 ILD621/ILD621GB/ILQ621/ILQ621GB Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 1 - Non-Saturated Switching Timing Fig. 2 - Non-Saturated Switching Timing Fig. 3 - Saturated Switching Timing Fig. 4 - Saturated Switching Timing SATURATED On time I F = ± 10 mA, VCC = 5.0 V, RL = 1 kΩ, VTH = 1.5 V t on 4.3 µs Rise time I F = ± 10 mA, VCC = 5.0 V, RL = 1 kΩ, VTH = 1.5 V t r 2.8 µs Off time I F = ± 10 mA, VCC = 5.0 V, RL = 1 kΩ, VTH = 1.5 V t off 2.5 µs Fall time I F = ± 10 mA, VCC = 5.0 V, RL = 1 kΩ, VTH = 1.5 V t f 11 µs Propagation H to L I F = ± 10 mA, VCC = 5.0 V, RL = 1 kΩ, VTH = 1.5 V t PHL 2.6 µs Propagation L to H I F = ± 10 mA, VCC = 5.0 V, RL = 1 kΩ, VTH = 1.5 V t PLH 7.2 µs SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT COMMON MODE TRANSIENT IMMUNITY PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Common mode rejection, output high VCM = 50 VP-P, RL = 1.0 kΩ, IF = 0 mA CMH 5000 V/µs Common mode rejection, output low VCM = 50 VP-P, RL = 1.0 kΩ, IF = 10 mA CML 5000 V/µs iild621_01 tR tFtD 50 % tPLH VO IF tPLH tS iild621_02 VO VCC = 5 V RL = 75 ΩF = 10 kHz, DF = 50 % IF = 10 mA iild621_03 IF tR VO tD tS tFtPHL tPLH VTH = 1.5 V iild621_04 VO VCC = 5 V RL F = 10 kHz, DF = 50 %

Document Number: 83654 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 20-Dec-07 5 ILD621/ILD621GB/ILQ621/ILQ621GB Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors Fig. 5 - Maximum LED Current vs. Ambient Temperature Fig. 6 - Maximum LED Power Dissipation Fig. 7 - Forward Voltage vs. Forward Current Fig. 8 - Collector Emitter Current vs. Temperature and LED Current Fig. 9 - Collector Emitter Leakage vs. Temperature Fig. 10 - Propagation Delay vs. Collector Load Resistor - 60 - 40 - 20 0 20 40 60 80 100 120 100 Tamb - Ambient Temperature (°C) IF - Maximum LED Currrent (mA) TJ (max.) = 100 °C iild621_05 iild621_06 - 60 - 40 - 20 20 40 60 80 100 200 100 Tamb - Ambient Temperature (°C) PLED - LED Power (mW) 150 iild621_07 IF - Forward Current (mA) 1001010.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VF - Forward Voltage (V) TA = 85 °C TA = 85 °C TA = 85 °C iild621_08 60503020100 50 °C 70 °C 85 °C IF - LED Current (mA) ICE - Collector Current (mA) 25 °C iild621_09 100806040200- 20 - 2 - 1 Tamb - Ambient Temperature (°C) ICEO - Collector Emitter (nA) VCE = 10 V Typical iild621_10 RL - Collector Load Resistor (kΩ) 1001010.1 100 1000 1.0 1.5 2.0 2.5 tPLH tPLH - Propagation Low-High (µs) tPHL - Propagation High-Low (µs)IF = 10 mA VCC = 5 V, Vth = 1.5 V tPHL

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83654 6 Rev. 1.5, 20-Dec-07 ILD621/ILD621GB/ILQ621/ILQ621GB Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) Fig. 11 - Maximum Detector Power Dissipation Fig. 12 - Maximum Collector Current vs. Collector Voltage Fig. 13 - Normalization Factor for Non-Saturated and Saturated CTR vs. IF Fig. 14 - Normalization Factor for Non-Saturated and Saturated CTR vs. IF Fig. 15 - Normalization Factor for Non-Saturated and Saturated CTR vs. IF iild621_11 - 60 - 40 - 20 0 20 40 60 80 100 100 150 200 Tamb - Ambient Temperature (°C) PDET - Detector Power (mW) iild621_12 0.1 10 100 1000 100 0.1 VCE - Collector Emitter Voltage (V) ICE - Collector Current (mA) 25 °C 50 °C 75 °C 90 °C Rth = 500 °C /W iild621_13 CTRNF - Normaliued CTR Factor 0.1 1 10 100 2.0 1.5 1.0 0.5 0.0 IF - LED Current (mA) NCTRce TA = 50 °C Normalized to: VCE = 10 V,I F = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce(sat) iild621_14 CTRNF - Normalized CTR Factor 0.1 1 10 100 2.0 1.5 1.0 0.5 0.0 IF - LED Current (mA) NCTRce TA = 70 °C Normalized to: VCE = 10 V,I F = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce(sat) iild621_15 CTRNF - Normalized CTR Factor 0.1 1 10 100 2.0 1.5 1.0 0.5 0.0 IF - LED Current (mA) NCTRce TA = 100 °C Normalized to: VCE = 10 V,I F = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce(sat)

Document Number: 83654 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 20-Dec-07 7 ILD621/ILD621GB/ILQ621/ILQ621GB Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors PACKAGE DIMENSIONS in inches (millimeters) i178006 Pin one ID 0.255 (6.48) 0.268 (6.81) 0.379 (9.63) 0.390 (9.91) 0.030 (0.76) 0.045 (1.14) 4° typ. 0.100 (2.54) typ. 10° 3° to 9° 0.300 (7.62) typ. 0.018 (0.46) 0.012 (0.30) 0.110 (2.79) 0.130 (3.30) 0.130 (3.30) 0.150 (3.81) 0.020 (0.51) 0.035 (0.89) 0.230 (5.84) 0.250 (6.35) 4 3 2 1 0.031 (0.79) 0.050 (1.27) 5 6 7 8 ISO method A 0.255 (6.4 8) 0.265 (6. 81) 0.779 (19.77) 0.790 (20.07) 0.030 (0.76) 0.045 (1.14) 0.100 (2.54) typ. 10° typ. 0.022 (0.56) 0.008 (0.20) 0.012 (0.30) 0.110 (2.79) 0.130 (3.30) Pin one ID 0.130 (3.30) 0.150 (3. 81) 0.020 (0.51) 0.035 (0.89) 8 7 6 5 4 3 2 1 9 10 11 12 13 14 15 16 0.031 (0.79) 0.300 (7.62) typ. 0.230 (5. 84) 0.250 (6.35) 0.050 (1.27) i178007 ISO method A

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83654 8 Rev. 1.5, 20-Dec-07 ILD621/ILD621GB/ILQ621/ILQ621GB Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) min. 0.315 ( 8.00) 0.020 (0.51 ) 0.040 (1.02 ) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03 ) 0.012 (0.30 ) typ. 0.0040 (0.102) 0.0098 (0.249) 15° max. Option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7.8) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) Option 6 0.315 (8.0) min. 0.300 (7.62) typ. 0.180 (4.6) 0.160 (4.1) 0.331 (8.4) min. 0.406 (10.3) max. 0.028 (0.7) min. Option 7 18450

Document Number: 83654 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 20-Dec-07 9 ILD621/ILD621GB/ILQ621/ILQ621GB Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1 Notice Specifications of the products displayed herein are subjec t to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.