ILD621GB-X007

ILQ621 VISHAY | Alldatasheet

Document overview

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Technical content

Features

• Alternate Source to TLP621-2/-4 and TLP621GB-2/-4  High Collector-Emitter Voltage, BV CEO=70 V  Dual and Quad Packages Feature: - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection  Isolation Test Voltage 5300 V RMS Agency Approvals  UL File # E52744 System Code H or J  DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1  BSI IEC60950 IEC60965  FIMKO

Description

The ILD621/ ILQ621 and ILD621GB/ ILQ621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon pho- totransistors. These devices are constructed using double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC. The ILD621/ ILQ621GB is well suited for CMOS inter- facing given the CTR CE sat of 30 % minimum at I F of 1.0 mA. High gain linear operation is guaranteed by a minimum CTR CE of 100 % at 5.0 mA. The ILD/Q621 has a guaranteed CTR CE 50 % minimum at 5.0 mA. The TRansparent IOn Shield insures stable DC gain in applications such as power supply feedback cir- cuits, where constant DC V IO voltages are present. Order Information For additional information on the available options refer to Option Information. Part Remarks ILD621 CTR > 50 %, DIP-8 ILD621GB CTR > 100 %, DIP-8 ILQ621 CTR > 50 %, DIP-16 ILQ621GB CTR > 100 %, DIP-16 ILD621-X006 CTR > 50 %, DIP-8 400 mil (option 6) ILD621-X007 CTR > 50 %, SMD-8 (option 7) ILD621-X009 CTR > 50 %, SMD-8 (option 9) ILD621GB-X007 CTR > 100 %, SMD-8 (option 7) ILQ621-X006 CTR > 50 %, DIP-8 400 mil (option 6) ILQ621-X007 CTR > 50 %, SMD-16 (option 7) ILQ621-X009 CTR > 50 %, SMD-16 (option 9) ILQ621GB-X006 CTR > 100 %, DIP-16 400 mil (option 6) ILQ621GB-X007 CTR > 100 %, SMD-16 (option 7) ILQ621GB-X009 CTR > 100 %, SMD-16 (option 9)

www.vishay.com Document Number 83654 Rev. 1.3, 19-Apr-04 VISHA YILD621/ GB/ ILQ621/ GB Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can caus e permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of thos e given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Coupler Parameter Test condition Symbol Value Unit Reverse voltage V R 6.0 V Forward current I F 60 mA mA Surge current I FSM 1.5 A Power dissipation P diss 100 mW Derate from 25 °C 1.33 mW/°C Parameter Test condition Symbol Value Unit Collector -emitter reverse voltage VECO 70 V Collector current I C 50 mA t < 1.0 ms I C 100 mA Power dissipation P diss 150 mW Derate from 25 °C - 2.0 mW/°C Parameter Test condition Part Symbol Value Unit Isolation test voltage t = 1.0 sec. V ISO 5300 V RMS ILD621GB 400 mW Derate from 25 °C 5.33 mW/°C ILQ621GB 500 mW Derate from 25 °C 6.67 mW/°C Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation resistance V IO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Storage temperature Tstg - 55 to +150 °C Operating temperature Tamb - 55 to +100 °C Junction temperature Tj 100 °C Soldering temperature 2.0 mm from case bottom T sld 260 °C

VISHA Y ILD621/ GB/ ILQ621/ GB Document Number 83654 Rev. 1.3, 19-Apr-04 Vishay Semiconductors www.vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Current Transfer Ratio Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 10 mA V F 1.0 1.15 1.3 V Reverse current V R = 6.0 V I R 0.01 10 µA Capacitance V F = 0, f = 1.0 MHz C O 40 pF Thermal resistance, Junction to lead RTHJL 750 K/W Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter capacitance V CE = 5.0 V, f = 1.0 MHz C CE 6.8 pF Collector-emitter leakage current VCE = 24 V I CEO 10 100 nA ICEO 20 50 µA Thermal resistance, Junction to lead RTHJL 500 K/W Parameter Test condition Part Symbol Min Typ. Max Unit Capacitance (input-output) V IO = 0 V, f = 1.0 MHz C IO 0.8 pF Insulation resistance V IO = 500 V 1012 Ω Channel to channel insulation 500 VAC Collector-emitter saturation voltage IF = 8.0 mA, ICE = 2.4 mA ILD621 ILQ621 VCEsat 0.4 V IF = 1.0 mA, ICE = 0.2 mA ILD621GB ILQ621GB VCEsat 0.4 V Parameter Test condition Part Symbol Min Typ. Max Unit Channel/Channel CTR match I F = 5.0 mA, VCE = 5.0 V CTRX/ CTRY 1 to 1 3 to 1 Current Transfer Ratio (collector-emitter saturated) IF = 1.0 mA, VCE = 0.4 V ILD621 ILQ621 CTRCEs at 60 % ILD621GB ILQ621GB CTRCEs at 30 % Current Transfer Ratio (collector-emitter) IF = 5.0 mA, VCE = 5.0 V ILD621 ILQ621 CTRCE 50 80 600 % ILD621GB ILQ621GB CTRCE 100 200 600 %

www.vishay.com Document Number 83654 Rev. 1.3, 19-Apr-04 VISHA YILD621/ GB/ ILQ621/ GB Vishay Semiconductors Switching Characteristics Non-saturated switching timing Saturated switching timing Common Mode Transient Immunity Parameter Test condition Symbol Min Ty p. Max Unit On Time I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP ton 3.0 µs Rise time I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tr 2.0 µs Off time I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP toff 2.3 µs Fall time I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tf 2.0 µs Propagation H-L I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tPHL 1.1 µs Propagation L-H I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tPLH 2.5 µs Parameter Test condition Symbol Min Ty p. Max Unit On time I F = ± 10 mA, VCC = 5.0 V, RL = 1.0 KΩ, VTH = 1.5 V ton 4.3 µs Rise time I F = ± 10 mA, VCC = 5.0 V, RL = 1.0 KΩ, VTH = 1.5 V tr 2.8 µs Off time I F = ± 10 mA, VCC = 5.0 V, RL = 1.0 KΩ, VTH = 1.5 V toff 2.5 µs Fall time I F = ± 10 mA, VCC = 5.0 V, RL = 1.0 KΩ, VTH = 1.5 V tf 11 µs Propagation H-L I F = ± 10 mA, VCC = 5.0 V, RL = 1.0 KΩ, VTH = 1.5 V tPHL 2.6 µs Propagation L-H I F = ± 10 mA, VCC = 5.0 V, RL = 1.0 KΩ, VTH = 1.5 V tPLH 7.2 µs Parameter Test condition Symbol Min Ty p. Max Unit Common mode rejection output high VCM = 50 VP-P, RL = 1.0 KΩ, IF = 0 mA CMH 5000 V/ µs Common mode rejection output low VCM = 50 VP-P, RL = 1.0 KΩ, IF = 10 mA CML 5000 V/ µs

VISHA Y ILD621/ GB/ ILQ621/ GB Document Number 83654 Rev. 1.3, 19-Apr-04 Vishay Semiconductors www.vishay.com Typical Characteristics (Tamb = 25 °C unless otherwise specified) Fig. 1 Non-saturated Switching Timing Fig. 2 Non-saturated Switching Timing Fig. 3 Saturated Switching Timing iild621_01 tR t FtD 50% tPLH VO IF tPLH tS iild621_02 VO VCC =5V RL = 75ΩF = 10 KHz, DF = 50% IF =1 0m A iild621_03 IF tRVO tD tS tFtPHL tPLH VTH = 1.5 V Fig. 4 Saturated Switching Timing Fig. 5 Maximum LED Current vs. Ambient Temperature Fig. 6 Maximum LED Power Dissipation iild621_04 VO VCC =5V RL F=1 0K H z , D F=5 0 % -60 -40 -20 0 20 40 60 80 100 120 100 TA - Ambient Temperature - °C IF - Maximum LED Current - mA TJ (MAX) = 100 °C iild621_05 iild621_06 -60 -40 -20 0 20 40 60 80 100 200 100 Ta - Ambient Temperature - °C PLED - LED Power - mW 150

www.vishay.com Document Number 83654 Rev. 1.3, 19-Apr-04 VISHA YILD621/ GB/ ILQ621/ GB Vishay Semiconductors Fig. 7 Forward Voltage vs. Forward Current Fig. 8 Collector-Emitter Current vs. Temperature and LED Current Fig. 9 Collector-Emitter Leakage vs. Temperature iild621_07 IF - Forward Current - mA 100101.1 0.7 0.8 0.9 1.0 1.1 1.2 1. 3 1.4 VF - Forward Voltage - V TA =8 5° C TA =8 5° C TA = 85° C iild621_08 60503020100 50°C 70°C 85°C IF - LED Current - mA ICE - Collector Current - mA 25°C iild621_09 100806040200-2010 TA - Ambient Temperature - °C ICEO - Collector-Emitter - nA VCE =1 0V Typical Fig. 10 Propagation Delay vs. Collector Load Resistor Fig. 11 Maximum Detector Power Dissipation Fig. 12 Maximum Collector Current vs. Collector Voltage iild621_10 RL - Collector Load Resistor - kΩ 100101.1 100 1000 1.0 1.5 2.0 2.5 tPLH tPLH - Propagation Low-High µs tPHL - Propagation High-Low µsIF =1 0m A VCC =5V ,V t h=1 . 5V tPHL iild621_11 -60 -40 -20 0 20 40 60 80 100 100 150 200 TA - Ambient Temperature - °C PDET - Detector Power - mW iild621_12 .1 10 100 1000 100 VCE - Collector-Emitter Voltage - V ICE - Collector Current - mA Rth = 500 °C/W 25 °C 50 °C 75 °C 90 °C

VISHA Y ILD621/ GB/ ILQ621/ GB Document Number 83654 Rev. 1.3, 19-Apr-04 Vishay Semiconductors www.vishay.com Fig. 13 Normalization Factor for Non-saturated and Saturated CTR vs. IF Fig. 14 Normalization Factor for Non-saturated and Saturated CTR vs. IF Fig. 15 Normalization Factor for Non-saturated and Saturated CTR vs. IF iild621_13 CTRNF - Normalized CTR Factor .1 1 10 100 2.0 1.5 1.0 0.5 0.0 IF - LED Current - mA NCTRce TA =5 0° C Normalized to: VCE =1 0V ,IF = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce(sat) iild621_14 CTRNF - Normalized CTR Factor .1 1 10 100 2.0 1.5 1.0 0.5 0.0 IF - LED Current - mA NCTRce TA =7 0° C Normalized to: VCE =1 0V ,I F = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce(sat) iild621_15 CTRNF - Normalized CTR Factor .1 1 10 100 2.0 1.5 1.0 0.5 0.0 IF - LED Current - mA NCTRce TA = 100 °C Normalized to: VCE =1 0V ,I F = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce(sat)

www.vishay.com Document Number 83654 Rev. 1.3, 19-Apr-04 VISHA YILD621/ GB/ ILQ621/ GB Vishay Semiconductors Package Dimensions in Inches (mm) Package Dimensions in Inches (mm) i178006 pin one ID .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. .100 (2.54) typ. 10° 3°–9° .300 (7.62) typ. .018 (.46) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 ISO Method A .255 (6.48) .265 (6.81) .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .100 (2.54)typ. 10° typ. 3°–9°.018 (.46) .012 (.30) .110 (2.79) .130 (3.30) pin one ID .130 (3.30) .150 (3.81) .020(.51) .035 (.89) 87654321 91 01 1 1 21 31 41 51 6 .031(.79) .300 (7.62) typ. .230 (5.84) .250 (6.35) .050 (1.27) i178007 ISO Method A

VISHA Y ILD621/ GB/ ILQ621/ GB Document Number 83654 Rev. 1.3, 19-Apr-04 Vishay Semiconductors www.vishay.com min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15° max. Option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) Option 6 .315 (8.0) MIN. .300 (7.62) TYP. .180 (4.6) .160 (4.1) .331 (8.4) MIN. .406 (10.3) MAX. .028 (0.7) MIN. Option 7 18450

www.vishay.com Document Number 83654 Rev. 1.3, 19-Apr-04 VISHA YILD621/ GB/ ILQ621/ GB Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423