ILD620GB

IDL620 VISHAY | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 9

Technical content

Features

• Identical Channel to Channel Footprint  ILD620 Crosses to TLP620-2  ILQ620 Crosses to TLP620-4  High Collector-Emitter Voltage, BV CEO = 70 V  Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection  Isolation Test Voltage 5300 V RMS Agency Approvals  UL File #E52744 System Code H or J  CSA 93751  DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1  BSI IEC60950 IEC60965

Description

The ILD620/ ILQ620 and ILD620GB/ ILQ620GB are multi-channel input phototransistor optocouplers that use inverse parallel GaAs IRLED emitter and high gain NPN silicon phototransistors per channel. These devices are constructed using over/under leadframe optical coupling and double molded insulation result- ing in a withstand test voltage of 5300 V RMS. The LED parameters and the linear CTR characteris- tics make these devices well suited for AC voltage detection. the ILD/Q620GB with its low I F quaranteed CTRCEsat minimizes power dissipation of the AC volt- age detection network that is placed in series with the LEDs. Eliminating the phototransistor base connec- tion provides added electrical noise immunity from the transients found in many industrial control environ- ments. Order Information For additional information on the available options refer to Option Information. Part Remarks ILD620 CTR > 50 %, DIP-8 ILD620GB CTR > 100 %, DIP-8 ILQ620 CTR > 50 %, DIP-16 ILQ620GB CTR > 100 %, DIP-16 ILD620-X007 CTR > 50 %, SMD-8 (option 7) ILD620-X009 CTR > 50 %, SMD-8 (option 9) ILD620GB-X009 CTR > 100 %, SMD-8 (option 9) ILQ620-X009 CTR > 50 %, SMD-16 (option 9) ILQ620GB-X009 CTR > 100 %, SMD-16 (option 9)

www.vishay.com Document Number 83653 Rev. 1.3, 26-Apr-04 VISHA YILD620/ 620GB / ILQ620/ 620GB Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can caus e permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of thos e given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Coupler Parameter Test condition Symbol Value Unit Forward current I F ± 60 mA Surge current I FSM ± 1.5 A Power dissipation P diss 100 mW Derate linearly from 25 °C 1.3 mW/°C Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BVCEO 70 V Collector current I C 50 mA t < 1.0 sec: I C 100 mA Power dissipation P diss 150 mW Derate from 25 °C 2.0 mW/°C Parameter Test condition Part Symbol Value Unit Isolation test voltage t = 1.0 sec. V ISO 5300 V RMS ILD620GB 400 mW Derate from 25 °C 5.33 mW/°C ILQ620GB 500 mW Derate from 25 °C 6.67 mW/°C Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation resistance V IO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Storage temperature T stg - 55 to + 150 °C Operating temperature T amb - 55 to + 100 °C Junction temperature T j 100 °C Soldering temperature 2.0 mm from case bottom T sld 260 °C

VISHA Y ILD620/ 620GB / ILQ620/ 620GB Document Number 83653 Rev. 1.3, 26-Apr-04 Vishay Semiconductors www.vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Current Transfer Ratio Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = ± 10 mA V F 1.0 1.15 1.3 V Forward current V R = ± 0.7 V I F 2.5 20 µA Capacitance V F = 0 V, f = 1.0 MHz C O 25 pF Thermal resistance, junction to lead RTHJL 750 K/W Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter capacitance V CE = 5.0 V, f = 1.0 MHz C CE 6.8 pF Collector-emitter leakage current VCE = 24 V I CEO 10 100 nA TA = 85 °C, VCE = 24 V I CEO 2.0 50 µA Thermal resistance, junction to lead RTHJL 500 K/W Parameter Test condition Part Symbol Min Typ. Max Unit Off-state collector current V F = ± 0.7 V, VCE = 24 V I CE(OFF) 1.0 10 µA Collector-emitter saturation voltage IF = ± 8.0 mA, ICE = 2.4 mA ILD620 V CEsat 0.4 V ILQ620 V CEsat 0.4 V IF = ± 1.0 mA, ICE = 0.2 mA ILD620GB V CEsat 0.4 V ILQ620GB V CEsat 0.4 V Parameter Test condition Part Symbol Min Typ. Max Unit Channel/Channel CTR match I F = ± 5.0 mA, VCE = 5.0 V CTRX/CTRY 1 to 1 3 to 1 CTR symmetry I CE(IF = - 5.0 mA)/ ICE(IF = + 5.0 mA) ICE(RATIO) 0.5 2.0 Current Transfer Ratio (collector-emitter saturated) IF = ± 1.0 mA, VCE = 0.4 V ILD620 CTR CEsat 60 % ILQ620 CTR CEsat 60 % Current Transfer Ratio (collector-emitter) IF = ± 5.0 mA, VCE = 5.0 V ILD620 CTR CE 50 80 600 % ILQ620 CTR CE 50 80 600 % Current Transfer Ratio (collector-emitter saturated) IF = ± 1.0 mA, VCE = 0.4 V ILD620GB CTR CEsat 30 % ILQ620GB CTR CEsat 30 % Current Transfer Ratio (collector-emitter) IF = ± 5.0 mA, VCE = 5.0 V ILD620GB CTR CE 100 200 600 % ILQ620GB CTR CE 100 200 600 %

www.vishay.com Document Number 83653 Rev. 1.3, 26-Apr-04 VISHA YILD620/ 620GB / ILQ620/ 620GB Vishay Semiconductors Switching Characteristics Non-saturated Saturated Typical Characteristics (Tamb = 25 °C unless otherwise specified) Parameter Test condition Symbol Min Ty p. Max Unit On time I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP ton 3.0 µs Rise time I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tr 20 µs Off time I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP toff 2.3 µs Fall time I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tf 2.0 µs Propagation H-L I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tPHL 1.1 µs Propagation L-H I F = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tPLH 2.5 µs Parameter Test condition Symbol Min Ty p. Max Unit On time I F = ± 10 mA, VCC = 5.0 V, RL = 1.0 KΩ, VTH = 1.5 V ton 4.3 µs Rise time I F = ± 10 mA, VCC = 5.0 V, RL = 1.0 KΩ, VTH = 1.5 V tr 2.8 µs Off time I F = ± 10 mA, VCC = 5.0 V, RL = 1.0 KΩ, VTH = 1.5 V toff 2.5 µs Fall time I F = ± 10 mA, VCC = 5.0 V, RL = 1.0 KΩ, VTH = 1.5 V tf 11 µs Propagation H-L I F = ± 10 mA, VCC = 5.0 V, RL = 1.0 KΩ, VTH = 1.5 V tPHL 2.6 µs Propagation L-H I F = ± 10 mA, VCC = 5.0 V, RL = 1.0 KΩ, VTH = 1.5 V tPLH 7.2 µs Fig. 1 Non-saturated Switching Timing iild620_01 VO VCC =5V RL = 75 ΩF = 10 KHz, DF = 50% IF =1 0m A Fig. 2 Saturated Switching Timing iild620_02 VO VCC =5V RL =1k Ω F = 10 KHz, DF = 50% IF =1 0m A

VISHA Y ILD620/ 620GB / ILQ620/ 620GB Document Number 83653 Rev. 1.3, 26-Apr-04 Vishay Semiconductors www.vishay.com Fig. 3 Non-saturated Switching Timing Fig. 4 Saturated Switching Timing Fig. 5 LED Forward Current vs.Forward Voltage iild620_03 tR tFtD 50% tPLH VO IF tPLH tS ton toff iild620 _04 IF tRVO tD tS tFtPHL tPLH VTH = 1.5 V iild620_05 -20 -40 -60 –55 °C VF - LED Forward Voltage - V IF - LED Forward Current - mA 85 °C 25 °C Fig. 6 Collector-Emitter Leakage vs. Temperature Fig. 7 Maximum LED Current vs. Ambient Temperature Fig. 8 Maximum LED Power Dissipation iild620_06 100806040200-2010 TA - Ambient Temperature - °C ICEO - Collector-Emitter - nA V c e=1 0V Typical -60 -40 -20 0 20 40 60 80 100 120 100 Ta - Ambient Temperature - °C IF - Maximum LED Current - mA TJ (MAX) = 100 °C iild620_07 iild620_08 -60 -40 -20 0 20 40 60 80 100 200 100 Ta - Ambient Temperature - °C PLED - LED Power - mW 150

www.vishay.com Document Number 83653 Rev. 1.3, 26-Apr-04 VISHA YILD620/ 620GB / ILQ620/ 620GB Vishay Semiconductors Fig. 9 Collector Current vs. Diode Forward Current Fig. 10 Normalization Factor for Non-saturated and Saturated CTR vs. IF Fig. 11 Normalization Factor for Non-saturated and Saturated CTR vs. IF iild620_09 1 5 10 20 100 2.5 5.0 1.0 0.5 0.1 Forward Current - IF mA IC- Normalized Collector Current ILD/Q620 Normalized to IF =1 0m A VCE =5V ILD/Q620GB iild620_10 CTRNF - Normalized CTR Factor .1 1 10 100 2.0 1.5 1.0 0.5 0.0 IF - LED Current - mA NCTRce TA =5 0° C Normalized to: VCE =1 0V ,I F = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce(sat) iild620_11 CTRNF - Normalized CTR Factor .1 1 10 100 2.0 1.5 1.0 0.5 0.0 IF - LED Current - mA NCTRce TA =7 0° C Normalized to: VCE =1 0V ,I F = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce(sat) Fig. 12 Normalization Factor for Non-saturated and Saturated CTR vs. IF Fig. 13 Peak LED Current vs. Pulse Duration, Tau Fig. 14 Maximum Detector Power Dissipation iild620_12 CTRNF - Normalized CTR Factor .1 1 10 100 2.0 1.5 1.0 0.5 0.0 IF - LED Current - mA NCTRce TA = 100 °C Normalized to: VCE =1 0V ,I F = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce(sat) iild620_13 10-6 10-5 10-4 10-3 10-2 10-1 100 101 10000 1000 100 t - LED Pulse Duration - s If(pk) - Peak LED Current - mA .005 ˇ D F=/ t τ.05 .02 .01 Duty Factor t τ iild620_14 -60 -40 -20 0 20 40 60 80 100 100 150 200 Ta - Ambient Temperature - °C PDET - Detector Power - mW

VISHA Y ILD620/ 620GB / ILQ620/ 620GB Document Number 83653 Rev. 1.3, 26-Apr-04 Vishay Semiconductors www.vishay.com Package Dimensions in Inches (mm) Fig. 15 Maximum Collector Current vs. Collector Voltage iild620_15 .1 10 100 1000 100 VCE - Collector-Emitter Voltage - V ICE - Collector Current - mA Rth = 500 °C/W 25 °C 50 °C 75 °C 90 °C i178006 pin one ID .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. .100 (2.54) typ. 10° 3°–9° .300 (7.62) typ. .018 (.46) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 ISO Method A

www.vishay.com Document Number 83653 Rev. 1.3, 26-Apr-04 VISHA YILD620/ 620GB / ILQ620/ 620GB Vishay Semiconductors Package Dimensions in Inches (mm) .255 (6.48) .265 (6.81) .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .100 (2.54)typ. 10° typ. 3°–9°.018 (.46) .012 (.30) .110 (2.79) .130 (3.30) pin one ID .130 (3.30) .150 (3.81) .020(.51) .035 (.89) 87654321 91 01 1 1 21 31 41 51 6 .031(.79) .300 (7.62) typ. .230 (5.84) .250 (6.35) .050 (1.27) i178007 ISO Method A .315 (8.0) MIN. .300 (7.62) TYP. .180 (4.6) .160 (4.1) .331 (8.4) MIN. .406 (10.3) MAX. .028 (0.7) MIN. Option 7 18494 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15° max. Option 9

VISHA Y ILD620/ 620GB / ILQ620/ 620GB Document Number 83653 Rev. 1.3, 26-Apr-04 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423