ILD610 VISHAY | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 8

Technical content

Features

  • Dual Version of SFH610 Series  Isolation Test Voltage, 5300 V RMS V CEsat 0.25 ( ≤ 0.4) V at IF = 10 mA, IC = 2.5 mA V CEO = 70 V  Lead-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals  UL1577, File No. E52744 System Code H or J, Double Protection  DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1  CSA 93751  BSI IEC60950 IEC60065

Description

The ILD610 series is a dual channel optocoupler series for high density applications. Each channel consists of an optically coupled pair with a Gallium Arsenide infrared LED and silicon NPN phototransis- tor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and out- put. The ILD610 series is the dual version of SFH610 series and uses a repetitive pin-out configuration instead of the more common alternating pin-out used in most dual couplers. Order Information For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause pe rmanent damage to the device. Func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Part Remarks ILD610-1 CTR 40 - 80 %, DIP-8 ILD610-2 CTR 63 - 125 %, DIP-8 ILD610-3 CTR 100 - 200 %, DIP-8 ILD610-4 CTR 160 - 320 %, DIP-8 ILD610-2X007 CTR 63 - 125 %, SMD-8 (option 7) ILD610-3X006 CTR 100 - 200 %, DIP-8 400 mil (option 6) ILD610-3X009 CTR 100 - 200 %, SMD-8 (option 9) ILD610-4X009 CTR 160 - 320 %, SMD-8 (option 9) Parameter Test condition Symbol Value Unit Reverse voltage V R 6.0 V Surge forward current t ≤ 10 ms I FSM 1.5 A Power dissipation P diss 100 mW Derate linearly from 25 °C 1.3 mW/°C DC forward current I F 60 mA

www.vishay.com Document Number 83651 Rev. 1.6, 26-Oct-04 VISHAYILD610 Vishay Semiconductors Output Coupler

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Parameter Test condition Symbol Value Unit Collector-emitter voltage V CE 70 V Collector current I C 50 mA t ≤ 1.0 ms I C 100 mA Power dissipation P diss 150 mW Derate linearly from 25 °C 2.0 mW/°C Parameter Test condition Symbol Value Unit Isolation test voltage t = 1.0 sec. V ISO 5300 V RMS Isolation resistance V IO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V,Tamb = 100 °C R IO ≥ 1011 Ω Storage temperature T stg - 55 to + 150 °C Operating temperature T amb - 55 to + 100 °C Junction temperature T j 100 °C Lead soldering time at 260 °C 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 60 mA V F 1.25 1.65 V Reverse current V R = 6.0 V I R 0.01 10 µA Capacitance V R = 0 V, f = 1.0 MHz C O 25 pF Parameter Test condition Part Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 10 mA, IE = 10 µAB V CEO 70 90 V BVCEO 6.0 7.0 V Collector-emitter dark current V CE = 10 V I CEO 2.0 50 nA Collector-emitter capacitance V CE = 5.0 V, f = 1.0 MHz C CE 7.0 pF Collector-emitter leakage current VCE = 10 V ILD610-1 I CEO 2.0 50 nA ILD610-2 I CEO 2.0 50 nA ILD610-3 I CEO 5.0 100 nA ILD610-4 I CEO 5.0 100 nA Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter saturation voltage IF = 10 mA, IC = 2.5 mA V CEsat 0.25 0.40 V Coupling capacitance C C 0.35 pF

Rev. 1.6, 26-Oct-04 Vishay Semiconductors www.vishay.com Current Transfer Ratio 1)CTR will match within a ratio of 1.7:1 Switching Characteristics Non-saturated Saturated Parameter Test condition Part Symbol Min Typ. Max Unit CTR1) IF = 10 mA, VCE = 5.0 V ILD610-1 CTR 40 80 % ILD610-2 CTR 63 125 % ILD610-3 CTR 100 200 % ILD610-4 CTR 160 320 % I F = 1.0 mA, VCE = 5.0 V ILD610-1 CTR 13 % ILD610-2 CTR 22 % ILD610-3 CTR 34 % ILD610-4 CTR 56 % Parameter Test condition Part Symbol Min Typ. Max Unit Rise time V CC = 5.0, RL = 75 Ω, IF = 10 mA ILD610-1 t r 2.0 µ ILD610-2 t r 2.5 µ ILD610-3 t r 2.9 µ ILD610-4 t r 3.3 µ Fall time V CC = 5.0, RL = 75 Ω, IF = 10 mA ILD610-1 t f 2.0 µ ILD610-2 t f 2.6 µ ILD610-3 t f 3.1 µ ILD610-4 t f 3.5 µ Turn-on time V CC = 5.0, RL = 75 Ω, IF = 10 mA ILD610-1 t on 3.0 µ ILD610-2 t on 3.2 µ ILD610-3 t on 3.6 µ ILD610-4 t on 2.3 µ Turn-off time V CC = 5.0, RL = 75 Ω, IF = 10 mA ILD610-1 t off 2.9 µ ILD610-2 t off 3.4 µ ILD610-3 t off 3.7 µ ILD610-4 t off 4.1 µ Parameter Test condition Part Symbol Min Typ. Max Unit Rise time V CC = 5.0, RL = 1.0 kΩ, IF = 5.0 mA ILD610-1 t r 2.0 µ ILD610-2 t r 2.8 µ ILD610-3 t r 3.3 µ ILD610-4 t r 4.6 µ Fall time V CC = 5.0, RL = 1.0 kΩ, IF = 5.0 mA ILD610-1 t f 11 µ ILD610-2 t f 2.6 µ ILD610-3 t f 3.1 µ ILD610-4 t f 15 µ Turn-on time V CC = 5.0, RL = 1.0 kΩ, IF = 5.0 mA ILD610-1 t on 3.0 µ ILD610-2 t on 4.3 µ ILD610-3 t on 4.6 µ ILD610-4 t on 6.0 µ

Figure 11. Saturated Switching Time Test Waveform

Rev. 1.6, 26-Oct-04 Vishay Semiconductors www.vishay.com min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15° max. Option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) Option 6 .315 (8.0) MIN. .300 (7.62) TYP. .180 (4.6) .160 (4.1) .331 (8.4) MIN. .406 (10.3) MAX. .028 (0.7) MIN. Option 7 18450

www.vishay.com Document Number 83651 Rev. 1.6, 26-Oct-04 VISHAYILD610 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423