ILD32 VISHAY | Alldatasheet

Document overview

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Technical content

Features

  • Isolation Test Voltage, 5300 V RMS  High Isolation Resistance, 10 11 Ω Typical  Low Coupling Capacitance  Standard Plastic DIP Package  Lead-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals  UL1577, File No. E52744 System Code H or J, Double Protection  DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1

Description

The ILD32/ ILQ32 are optically coupled isolators with a gallium arsenide infrared LED and a silicon photo- darlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Order Information For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause pe rmanent damage to the device. Func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Part Remarks ILD32 CTR > 500 %, DIP-8 ILQ32 CTR > 500 %, DIP-16 ILD32-X006 CTR > 500 %, DIP-8 400 mil (option 6) ILD32-X007 CTR > 500 %, SMD-8 (option 7) ILD32-X009 CTR > 500 %, SMD-8 (option 9) ILQ32-X007 CTR > 500 %, SMD-8 (option 7) ILQ32-X009 CTR > 500 %, SMD-8 (option 9) Parameter Test condition Symbol Value Unit Peak reverse voltage V R 3.0 V Forward continuous current I F 60 mA Power dissipation P diss 100 mW Derate linearly from 25°C 1.33 mW/°C

www.vishay.com Document Number 83650 Rev. 1.5, 26-Oct-04 ILD32/ ILQ32 Vishay Semiconductors Output Coupler 1) between emitter and detector refer to standard climate 23 °C/50 %RH; DIN 50014

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BVCEO 30 V Collector (load) current I C 125 mA Power dissipation P diss 150 mW Derate linearly from 25°C 2.0 mW/°C Parameter Test condition Part Symbol Value Unit Isolation test voltage 1) t = 1.0 sec. V ISO 5300 V RMS Creepage ≥ 7m m Clearance ≥ 7m m Comparative tracking index per DIN IEC 112/VDE303, part 1 ≥ 175 Isolation resistance V IO = 500 V, Tamb = 25 °C R IO 1012 Ω VIO = 500 V, Tamb = 100 °C R IO 1011 Ω Total dissipation ILD32 P tot 400 mW ILQ32 P tot 500 mW Derate linearly from 25 °C ILD32 5.33 mW/°C ILQ32 6.67 mW/°C Storage temperature T stg - 55 to + 150 °C Operating temperature T amb - 55 to + 100 °C Lead soldering time at 260 °C 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 10 mA V F 1.25 1.5 V Reverse current V R = 3.0 V I R 0.1 100 pF Capacitance V R = 0 V C O 25 pF Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 100 µA, IF = 0 BV CEO 30 V Breakdown voltage emitter- collector IE = 100 µAB C ECO 5.0 10 nA Collector-emitter leakage current VCE = 10 V, IF = 0 I CEO 1.0 100 nA

Rev. 1.5, 26-Oct-04 Vishay Semiconductors www.vishay.com Package Dimensions in Inches (mm) Package Dimensions in Inches (mm) i178006 pin one ID .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. .100 (2.54) typ. 10° 3°–9° .300 (7.62) typ. .018 (.46) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 ISO Method A .255 (6.48) .265 (6.81) .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .100 (2.54)typ. 10° typ. 3°–9°.018 (.46) .012 (.30) .110 (2.79) .130 (3.30) pin one ID .130 (3.30) .150 (3.81) .020(.51) .035 (.89) 87654321 91 01 1 1 21 31 41 51 6 .031(.79) .300 (7.62) typ. .230 (5.84) .250 (6.35) .050 (1.27) i178007 ISO Method A

www.vishay.com Document Number 83650 Rev. 1.5, 26-Oct-04 ILD32/ ILQ32 Vishay Semiconductors min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15° max. Option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) Option 6 .315 (8.0) MIN. .300 (7.62) TYP. .180 (4.6) .160 (4.1) .331 (8.4) MIN. .406 (10.3) MAX. .028 (0.7) MIN. Option 7 18450

Rev. 1.5, 26-Oct-04 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Cl ean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1 Notice Specifications of the products displayed herein are subjec t to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.