IL30 VISHAY | Alldatasheet

Document overview

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Technical content

Features

  • 125 mA Load Current Rating  Fast Rise Time, 10 µs  Fast Fall Time, 35 µs  Single, Dual and Quad Channel  Solid State Reliability  Standard DIP Packages  Lead-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals  UL1577, File No. E52744 System Code H or J, Double Protection  DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1  BSI IEC60950 IEC60065  FIMKO

Description

The IL30/ IL31/ IL55 single, ILD30/ ILD31/ ILD55 dual, and ILQ30/ ILQ31/ ILQ55 quad are optically coupled isolators with Gallium Arsenide infrared emit- ters and silicon photodarlin gton sensors. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits, with no crosstalk between channels. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. The IL30/ IL31/ IL55 are equivalent to MCA230/ MCA231/ MCA255. The ILD30/ ILD31/ ILD55 are designed to reduce board space requirements in high density applications.

www.vishay.com Document Number 83621 Rev. 1.5, 26-Oct-04 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Order Information For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can caus e permanent damage to the device. F unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input (each channel) Output Part Remarks IL30 CTR > 100 %, Single Channel DIP-6 IL31 CTR > 200 %, Single Channel DIP-6 IL55 CTR > 100 %, Single Channel DIP-6 ILD30 CTR > 100 %, Dual Channel DIP-8 ILD31 CTR > 200 %, Dual Channel DIP-8 ILD55 CTR > 100 %, Dual Channel DIP-8 ILQ30 CTR > 100 %, Quad Channel DIP-16 ILQ31 CTR > 200 %, Quad Channel DIP-16 ILQ55 CTR > 100 %, Quad Channel DIP-16 IL55-X009 CTR > 100 %, Single Channel SMD-6 (option 9) ILD30-X009 CTR > 100 %, Dual Channel SMD-8 (option 9) ILD31-X007 CTR > 200 %, Dual Channel SMD-8 (option 7) ILD31-X009 CTR > 200 %, Dual Channel SMD-8 (option 9) ILD55-X007 CTR > 100 %, Dual Channel SMD-8 (option 7) ILD55-X009 CTR > 100 %, Dual Channel SMD-8 (option 9) ILQ30-X009 CTR > 100 %, Quad Channel SMD-16 (option 9) ILQ55-X007 CTR > 100 %, Quad Channel SMD-16 (option 7) ILQ55-X009 CTR > 100 %, Quad Channel SMD-16 (option 9) Parameter Test condition Symbol Value Unit Peak reverse voltage V RM 3.0 V Forward continuous current I F 60 mA Power dissipation P diss 100 mW Derate linearly from 25 °C 1.33 mW/°C Parameter Test condition Part Symbol Value Unit Collector-emitter breakdown voltage IL30 BV CEO 30 V ILD30 BV CEO 30 V ILQ30 BV CEO 30 V IL55 BV CEO 55 V ILD55 BV CEO 55 V ILD55 BV CEO 55 V

IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Document Number 83621 Rev. 1.5, 26-Oct-04 Vishay Semiconductors www.vishay.com Coupler

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input GaAs emitter (per channel) Collector (load) current I C 125 mA Power dissipation Pdiss 150 mW Derate linearly from 25 °C 2.0 mW/°C Parameter Test condition Part Symbol Value Unit Total package power dissipation IL30 P tot 250 mW IL31 P tot 250 mW IL55 P tot 250 mW ILD30 P tot 400 mW ILD31 P tot 400 mW ILD55 P tot 400 mW ILQ30 P tot 500 mW ILQ31 P tot 500 mW ILQ55 P tot 500 mW Derate linearly from 25 °C IL30 3.3 mW/°C IL31 3.3 mW/°C IL55 3.3 mW/°C ILD30 5.33 mW/°C ILD31 5.33 mW/°C ILD55 5.33 mW/°C ILQ30 6.67 mW/°C ILQ31 6.67 mW/°C ILQ55 6.67 mW/°C Isolation test voltage V ISO 5300 V RMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Comparative tracking index 175 Storage temperature T stg - 55 to + 125 °C Operating temperature T amb - 55 to + 100 °C Lead soldering time at 260 °C 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 20 mA V F 1.25 1.5 V Reverse current V R = 3.0 V I R 0.1 10 µA Capacitance V R = 0 V C O 25 pF Parameter Test condition Part Symbol Value Unit

www.vishay.com Document Number 83621 Rev. 1.5, 26-Oct-04 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Output per channel Coupler Current Transfer Ratio Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 100 µAB V CEO 30/55 V Collector-emitter leakage current VCE = 10 V, IF = 0 I CEO 1.0 100 nA Collector-emitter capacitance V CE = 10 V, f = 1.0 MHz C CE 3.4 pF Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter saturation voltage IC = 50 mA, IF = 50 mA V CEsat 0.9 1.0 V Isolation test voltage 5300 V RMS Isolation resistance R IO 1012 Ω Capacitance (input-output) C IO 0.5 pF Parameter Test condition Part Symbol Min Typ. Max Unit Current Transfer Ratio I F = 10 mA, VCE = 5.0 V IL30 CTR 100 400 % IL55 CTR 100 400 % ILD30 CTR 100 400 % ILD55 CTR 100 400 % ILQ30 CTR 100 400 % ILQ55 CTR 100 400 % IL31 CTR 200 400 % ILD31 CTR 200 400 % ILQ31 CTR 200 400 %

IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Document Number 83621 Rev. 1.5, 26-Oct-04 Vishay Semiconductors www.vishay.com Package Dimensions in Inches (mm) Package Dimensions in Inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) Min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one ID 654 123 18° 3°–9° .300–.347 (7.62–8.81) typ. ISO Method A i178006 pin one ID .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. .100 (2.54) typ. 10° 3°–9° .300 (7.62) typ. .018 (.46) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 ISO Method A

www.vishay.com Document Number 83621 Rev. 1.5, 26-Oct-04 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Package Dimensions in Inches (mm) .255 (6.48) .265 (6.81) .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .100 (2.54)typ. 10° typ. 3°–9°.018 (.46) .012 (.30) .110 (2.79) .130 (3.30) pin one ID .130 (3.30) .150 (3.81) .020(.51) .035 (.89) 87654321 91 01 1 1 21 31 41 51 6 .031(.79) .300 (7.62) typ. .230 (5.84) .250 (6.35) .050 (1.27) i178007 ISO Method A .315 (8.0) MIN. .300 (7.62) TYP. .180 (4.6) .160 (4.1) .331 (8.4) MIN. .406 (10.3) MAX. .028 (0.7) MIN. Option 7 18494 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15° max. Option 9

IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Document Number 83621 Rev. 1.5, 26-Oct-04 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Cl ean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423