ILD3

ILD3 VISHAY | Alldatasheet

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Technical content

Features

• Current Transfer Ratio at I F = 1.6 mA  Double Molded Package Offers Isolation Test Voltage 5300 VRMS, 1.0 sec. Agency Approvals  UL - File No. E52744 System Code H or J  CSA 93751  BSI IEC60950 IEC60965  FIMKO

Description

The ILD3/ ILQ3 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN pho- totransistors. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The ILD3/ ILQ3 are especially designed for driving medium-speed logic and can be used to elim- inate troublesome ground loop and noise problems. Also these couplers can be used to replace relays and transformers in many digital interface applications such as CTR modulation. The ILD3 has two isolated channels in a single DIP package and the ILQ3 has four isolated channels per package. Order Information For additional information on the available options refer to Option Information. Part Remarks ILD3 CTR > 500 %, Dual Channel DIP-8 ILQ3 CTR > 500 %, Quad Channel DIP-16

www.vishay.com Document Number 83655 Rev. 1.3, 19-Apr-04 VISHA YILD3/ ILQ3 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can caus e permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of thos e given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Coupler Parameter Test condition Symbol Value Unit Reverse current V R 6.0 V Forward continuous current I F 60 mA Surge current I FSM 2.5 A Power dissipation P diss 100 mW Derate linearly from 25 °C 1.3 mW/°C Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BVCEO 50 V Collector current I C 50 mA t < 1.0 ms I C 400 mA Power dissipation P diss 200 mW Derate linearly from 25 °C 2.6 mW/°C Parameter Test condition Symbol Value Unit Isolation test voltage (between emitter and detector, refer to standard climate 23°C/50% RH, DIN50014) t = 1 sec. V ISO 5300 V RMS Creepage ≥ 7m m Clearance ≥ 7m m Isolation resistance V IO = 500 V, Tamb = 25 °C R IO 1012 Ω VIO = 500 V, Tamb = 100 °C R IO 1011 Ω Power dissipation P tot 250 mW Derate linearly from 25 °C 3.3 mW/°C Storage temperature range T stg - 40 to + 150 °C Operating temperature range T amb - 40 to + 100 °C Junction temperature T j 100 °C Soldering temperature 2.0 mm case bottom T sld 260 °C

Rev. 1.3, 19-Apr-04 Vishay Semiconductors www.vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Current Transfer Ratio Common Mode Transient Immunity Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 60 mA V F 1.25 1.65 V Reverse current V R = 6.0 V I R 0.01 10 µA Capacitance V R = 0 V, f = 1.0 MHz 25 pF Thermal resistance, junction to lead Rthjl 750 K/W Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter leakage current VCE = 15 V I CEO 5.0 70 nA Collector-emitter capacitance V CE = 5.0 V, f = 1.0 MHz C CE 6.8 pF Thermal resistance, junction to lead Rthjl 500 K/W Parameter Test condition Symbol Min Typ. Max Unit Capacitance (input-output) V IO = 0 V, f = 1.0 MHz C IO 0.8 pF Parameter Test condition Part Symbol Min Typ. Max Unit Saturated Current Transfer Ratio (ILD/Q3-1) IF = 1.6 mA, VCE = 0.4 V ILD3 CTR sat 300 % Saturated Current Transfer Ratio (ILD/Q3-2) IF = 1.0 mA, VCE = 0.4 V ILD3 CTR sat 100 % Parameter Test condition Symbol Min Typ. Max Unit Common mode rejection output high VCM = 50 VP-P, RL = 10 KΩ, IF = 0 mA CMH 5000 V/ µs Common mode rejection output low VCM = 50 VP-P, RL = 10 KΩ IF = 0 mA CML 5000 V/ µs Common mode coupling capacitance CCM 0.01 pF

www.vishay.com Document Number 83655 Rev. 1.3, 19-Apr-04 VISHA YILD3/ ILQ3 Vishay Semiconductors Package Dimensions in Inches (mm) Package Dimensions in Inches (mm) i178006 pin one ID .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. .100 (2.54) typ. 10° 3°–9° .300 (7.62) typ. .018 (.46) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 ISO Method A .255 (6.48) .265 (6.81) .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .100 (2.54)typ. 10° typ. 3°–9°.018 (.46) .012 (.30) .110 (2.79) .130 (3.30) pin one ID .130 (3.30) .150 (3.81) .020(.51) .035 (.89) 87654321 91 01 1 1 21 31 41 51 6 .031(.79) .300 (7.62) typ. .230 (5.84) .250 (6.35) .050 (1.27) i178007 ISO Method A

Rev. 1.3, 19-Apr-04 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423