ILD256T VISHAY | Alldatasheet
Document overview
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Technical content
Rev. 1.6, 20-Apr-07 www.vishay.com For technical support, please contact: optocoupler.answers@vishay.com Optocoupler, Phototransistor Output, Dual Channel, AC Input
FEATURES
- Each Channel: Guaranteed CTR Symmetry, 2:1 Maximum Bidirectional AC Input SOIC-8 Surface Mountable Package Isolation Test Voltage, 4000 V RMS Standard Lead Spacing, 0.05 Available only on Tape and Reel Option (Conforms to EIA Standard 481-2) Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC i179044 E C C E A/C C/A A/C C/A
DESCRIPTION
The ILD256T is a dual channel optocoupler. Each channel consists of two infrared emitters coupled to a silicon NPN phototransistor detector. These circuit elements are constructed with a standard SOIC-8A footprint. The product is well suited for telecom applications such as ring detection or off/on hook status, given its bidirectional LED input and guaranteed current transfer ratio (CTR) of 20 % at I F = 10 mA. AGENCY APPROVALS UL1577, File No. E52744 System Code Y DIN EN 60747-5-2 (VDE0884) Available with Option 1
APPLICATIONS
Telecom applications ring detection off/on hook status Note: For additional information on the available options refer to Option Information. ORDER INFORMATION PART REMARKS ILD256T CTR > 20 %, SOIC-8 ABSOLUTE MAXIMUM RATINGS1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Forward continuous current I F 30 mA Power dissipation P diss 50 mW Derate linearly from 25 °C 0.66 mW/°C OUTPUT Collector-emitter breakdown voltage BVCEO 70 V Emitter-collector breakdown voltage BVECO 7.0 V Power dissipation P diss 125 mW Derate linearly from 25 °C 1.67 mW/°C
www.vishay.com Document Number 83649 Rev. 1.6, 20-Apr-07 Vishay Semiconductors ILD256T For technical support, please contact: optocoupler.answers@vishay.com Note: 1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute Maxi mum Ratings can cause permanent damage to th e device. Functional operation of the device is not implied at these or any other co nditions in excess of those given in the operat ional sections of this document. Exposure to abs olute Maximum Rating for extended periods of the time can adversely affect reliability. Note: 1) Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requi rements. Typical values ar e characteristics of the device and are the result of eng ineering evaluation. Typical values are for information only and are not part of the testing requirements. Note: safety ratings shall be ensured by means of prodective circuits. COUPLER Isolation voltage, input to output t = 1.0 s V ISO 4000 VRMS Total package dissipation (LED + detector) Ptot 300 mW Derate linearly from 25 °C 4.0 mW/°C Storage temperature T stg - 55 to + 150 °C Operating temperature T amb - 55 to + 100 °C Soldering temperature at 260 °C T sld 10 sec. ELECTRICAL CHARACTERISTICS1) PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT INPUT Forward voltage I F = ± 10 mA V F 1.2 1.55 V Reverse current V R = 6.0 V I R 0.1 100 mA OUTPUT Collector-emitter breakdown voltage I C = 10 µA BV CEO 70 V Emitter-collector breakdown voltage I E = 10 µA BV ECO 7.0 V Collector-emitter leakage current V CE = 10 V I CEO 5.0 50 nA COUPLER Symmetry (CTR at + 10 mA)/(CTR at -10 mA) 0.5 1.0 2.0 Saturation voltage, collector-emitter I F = ± 16 mA, IC = 2.0 mA V CEsat 0.4 V CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT DC Current Transfer Ratio I F = ± 10 mA, VCE = 5.0 V CTR DC 20 % SAFETY AND INSULATION RATINGS1) PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT Climatic classification (according to IEC 68 part 1) 55/100/21 Comparative tracking index CTI 175 399 V IOTM 6000 V VIORM 560 V PSO 350 mW ISI 150 mA TSI 165 °C Creepage 4m m Clearance 4m m Insulation thickness, reinforced rated per IEC60950 2.10.5.1 0.2 mm ABSOLUTE MAXIMUM RATINGS1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Rev. 1.6, 20-Apr-07 www.vishay.com Vishay Semiconductors ILD256T For technical support, please contact: optocoupler.answers@vishay.com PACKAGE DIMENSIONS in inches (millimeters) 0.036 (0.91) 0.014 (0.36) 0.170 (4.32) 0.045 (1.14) 0.260 (6.6) R 0.010 (0.13) 0.050 (1.27) i178020 ISO Method A 40° 0.240 (6.10) 0.050 (1.27) Typ. 0.016 (0.41) 0.004 (0.10) 0.008 (0.20) Lead coplanarity ± 0.001 Max. 0.008 (0.20) 0.120 ± 0.002 (3.05 ± 0.05) CL R0.010 (0.25) Max. 0.040 (1.02) 5° Max. Pin One I.D. 0.154 ± 0.002 (3.91 ± 0.05) 0.015 ± 0.002 (5.84 ± 0.05) 0.020 ± 0.004 (0.51 ± 0.10) 2 Plcs. 0.0585 ± 0.002 (1.49 ± 0.05) 0.125 ± 0.002 (3.18 ± 0.05)
www.vishay.com Document Number 83649 Rev. 1.6, 20-Apr-07 Vishay Semiconductors ILD256T For technical support, please contact: optocoupler.answers@vishay.com OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employee s and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Cle an Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1 Notice Specifications of the products displayed herein are subjec t to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.