ILD205T VISHAY | Alldatasheet

Document overview

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Technical content

Features

  • Two Channel Coupler  SOIC-8A Surface Mountable Package  Standard Lead Spacing of .05 "  Available only on Tape and Reel Option (Con- forms to EIA Standard 481-2)  Isolation Test Voltage, 3000 V RMS  Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering  Lead-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals  UL1577, File No. E52744 System Code Y

Description

The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T are optically coupled pairs with a Gallium Arsenide infra- red LED and a silicon NPN phototransistor. Signal information, including a DC le vel, can be transmitted by the device while maintaining a high degree of elec- trical isolation between input and output. The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T come in a standard SOIC-8A small outline package for surface mounting which makes it id eally suited for high den- sity applications with limited space. In addition to elim- inating through-holes requirements, this package conforms to standards for surface mounted devices. A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adja- cent circuits. The high BV CEO of 70 V gives a higher safety margin compared to the industry standard of 30 V. Order Information For additional information on the available options refer to Option Information. Part Remarks ILD205T CTR 40 - 80 %, SOIC-8 ILD206T CTR 63 - 125 %, SOIC-8 ILD207T CTR 100 - 200 %, SOIC-8 ILD211T CTR > 20 %, SOIC-8 ILD213T CTR > 100 %, SOIC-8 ILD217T CTR > 100 %, SOIC-8

www.vishay.com Document Number 83647 Rev. 1.4, 26-Oct-04 ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can caus e permanent damage to the device. F unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Coupler

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Value Unit Peak reverse voltage V R 6.0 V Peak pulsed current 1.0 µs, 300 pps 1.0 A Continuous forward current per channel 30 mA Power dissipation P diss 50 mW Derate linearly from 25 °C 0.66 mW/°C Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BV CEO 70 V Emitter-collector breakdown voltage BV ECO 7.0 V Power dissipation per channel P diss 125 mW Derate linearly from 25 °C 1.67 mW/°C Parameter Test condition Symbol Value Unit Total package dissipation ambient (2 LEDs + 2 detectors, 2 channels) Ptot 300 mW Derate linearly from 25 °C 4.0 mW/°C Storage temperature T stg - 55 to + 150 °C Operating temperature T amb - 55 to + 100 °C Soldering time from 260 °C T sld 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 10 mA V F 1.2 1.55 V Reverse current V R = 6.0 V I R 0.1 100 µA Capacitance V R = 0 C O 25 pF

ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T Document Number 83647 Rev. 1.4, 26-Oct-04 Vishay Semiconductors www.vishay.com Output Coupler Current Transfer Ratio Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 10 µAB V CEO 70 V Emitter-collector breakdown voltage IE = 10 µAB V ECO 7.0 V Collector-emitter leakage current VCE = 10 V, IF = 0 I CEO 5.0 50 nA Collector-emitter capacitance V CE = 0 C CE 10 pF Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter saturation voltage IF = 10 mA, IC = 2.5 mA V CE(sat) 0.4 V Capacitance (input-output) C IO 0.5 pF Isolation test voltage t = 1.0 sec. V ISO 3000 V RMS Resistance, input to output R IO 100 G Ω Parameter Test condition Part Symbol Min Typ. Max Unit DC Current Transfer Ratio V CE = 5.0 V, IF = 10 mA ILD205T CTR DC 40 80 % ILD206T CTR DC 63 125 % ILD207T CTR DC 100 200 % ILD211T CTR DC 20 % ILD213T CTR DC 100 % VCE = 5.0 V, IF = 1.0 mA ILD205T CTR DC 13 30 % ILD206T CTR DC 22 45 % ILD207T CTR DC 34 70 % ILD217T CTR DC 100 120 %

www.vishay.com Document Number 83647 Rev. 1.4, 26-Oct-04 ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T Vishay Semiconductors Package Dimensions in Inches (mm) .036 (.91) .014 (.36) .260 (6.6) R .010 (.13) .050 (1.27) i178020 ISO Method A 40° .240 (6.10) .050(1.27) Typ. .016 (.41) .004 (.10) .008 (.20) Lead coplanarity ±.001 Max. .008 (.20) .120±.002 (3.05±.05) CL R.010 5° Max. Pin One I.D. .154±.002 (3.91±.05) .015±.002 (.38±.05).230±.002 (5.84±.05) .020±.004 (.51±.10) 2 Plcs. .0585±.002 (1.49±.05) .125±.002 (3.18±.05)

ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T Document Number 83647 Rev. 1.4, 26-Oct-04 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Cl ean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423