ILD1206T_V02 VISHAY | Alldatasheet

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ILD1206T, ILD1207T www.vishay.com Vishay Semiconductors Rev. 2.0, 16-Apr-2021 1 Document Number: 83599 For technical questions, contact: optocoupler.answers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Optocoupler, Phototransistor Output, Dual Channel, LINKS TO ADDITIONAL RESOURCES

DESCRIPTION

The 100 % rated ILD1206T and ILD1207T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILD1206T and ILD1207T come in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A specified minimum and ma ximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BV CEO of 70 V gives a higher safety margin compared to the industry standard of 30 V.

FEATURES

  • Two channel coupler
  • SOIC-8 surface mountable package
  • Standard lead spacing of 0.05"
  • Available only on tape and reel option (conforms to EIA standard 481-2)
  • Isolation test voltage, 4000 V RMS
  • Compatible with dual wave , vapor phase and IR reflow soldering
  • Operating temperature from - 55 °C to + 110 °C
  • Lead (Pb)-free component
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

  • A C a d a p t e r s
  • P L C s
  • Switch mode power supplies
  • D C / D C c o n v e r t e r s
  • Microprocessor I/O interfaces
  • General impedance matching circuits AGENCY APPROVALS
  • UL / cUL 1577
  • DIN EN 60747-5-5 (VDE 0884), available with option 1 Note
  • For additional information on the availa ble options refer to option information i179018-1 VDEi179074 Related Documents

ORDERING INFORMATION

IL D 120# T PART NUMBER AGENCY CERTIFIED / PACKAGE CTR (%) 10 mA UL, cUL, VDE 63 to 125 100 to 200 SOIC-8 ILD1206T ILD1207T SOIC-8 6.1 mm

ILD1206T, ILD1207T www.vishay.com Vishay Semiconductors Rev. 2.0, 16-Apr-2021 2 Document Number: 83599 For technical questions, contact: optocoupler.answers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note

  • Stresses in excess of the absolu te maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those give n in the operational sections of this document. Exposure to abs olute maximum rating for extended periods of the time can adversely affect reliability Fig. 1 - Power Dissipation vs. Ambient Temperature ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Peak reverse voltage V R 6V Peak pulsed voltage 1 μs, 300 pps 1 A Continuous forward current per channel 30 mA Power dissipation P diss 50 mW Derate linearly from 25 °C 0.5 mW/°C OUTPUT Collector emitter breakdown voltage BV CEO 70 V Emitter collector breakdown voltage BV ECO 7V Power dissipation per channel P diss 125 mW Derate linearly from 25 °C 1.25 mW/°C COUPLER Isolation test voltage t = 1 min V ISO 3333 V RMS Total package dissipation ambient (2 LEDs and 2 detectors, 2 channels) Ptot 300 mW Derate linearly from 25 °C 4m W / ° C Storage temperature T stg -55 to +150 °C Operating temperature T amb -55 to +110 °C Soldering time from 260 °C T sld 10 s 120 150 0 20 40 60 80 100 120 Ambient Temperature (°C) 17544 P (mW) Phototransistor total IR - Diode

ILD1206T, ILD1207T www.vishay.com Vishay Semiconductors Rev. 2.0, 16-Apr-2021 3 Document Number: 83599 For technical questions, contact: optocoupler.answers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note

  • Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements Fig. 2 - Switching Test Circuit ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 10 mA V F -1 . 2 1 . 5 5 V Reverse current V R = 6 V I R - 0.1 100 μA Capacitance V R = 0 V C O -2 5-p F OUTPUT Collector emitter breakdown voltage I C = 10 μA BV CEO 70 - - V Emitter collector breakdown voltage I E = 10 μA BV ECO 7--V Collector emitter leakage current V CE = 10 V, IF = 0 A I CEO - 5 50 nA Collector emitter capacitance V CE = 0 V C CE -1 0-p F Collector emitter saturation voltage I F = 10 mA, IC = 2.5 mA V CEsat -- 0 . 4 V COUPLER Capacitance (input to output) C IO -0 . 5-p F Resistance (input to output) R IO - 100 - G Ω CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT IC/IF VCE = 5 V, IF = 10 mA ILD1206T CTR DC 63 - 125 % ILD1207T CTR DC 100 - 200 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Turn-on time I C = 2 mA, RL = 100 Ω, VCC = 5 V t on 5-- μ s Turn-off time I C = 2 mA, RL = 100 Ω, V CC = 5 V t off 4-- μ s iild205t_08 toff tr 10 % 50 % 90 % ts tpdofftpdon ton trtdOutput Input 10 % 50 % 90 % Input VOUT VCC = 5 V RL

ILD1206T, ILD1207T www.vishay.com Vishay Semiconductors Rev. 2.0, 16-Apr-2021 4 Document Number: 83599 For technical questions, contact: optocoupler.answers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note the safety ratings shall be ensured by means of protective circuits TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - V CE vs. IC, (Non-Saturated) SAFETY AND INSULATION RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Climatic classification Accordin g to IEC 68 part 1 55 / 100 / 21 Pollution degree According to DIN VDE 0109 2 Comparative tracking index Insulation group IIIa CTI 175 Maximum rated withstanding isolation voltage According to UL1577, t = 1 min V ISO 3333 V RMS Maximum transient isolation voltage According to DIN EN 60747-5-5 V IOTM 6000 V peak Maximum repetitive peak isolation voltage According to DIN EN 60747-5-5 V IORM 560 V peak Isolation resistance Tamb = 25 °C, VIO = 500 V R IO ≥ 1012 Ω Tamb = 100 °C, VIO = 500 V R IO ≥ 1011 Ω Output safety power PSO 350 mW Input safety current ISI 150 mA Input safety temperature T S 165 °C Creepage distance ≥ 4m m Clearance distance ≥ 4m m Insulation thickness DTI ≥ 0.2 mm Vf - Forward Voltage (V) If - Forward Current (mA) 19149 0 °C 25 °C 50 °C 110 °C - 55 °C 0123456789 1 0 VCE (V) Collector Current (mA) IF = 5 mA IF = 10 mA IF = 15 mA IF= 20 mA IF = 30 mA 83599 graph5

ILD1206T, ILD1207T www.vishay.com Vishay Semiconductors Rev. 2.0, 16-Apr-2021 5 Document Number: 83599 For technical questions, contact: optocoupler.answers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Collector to Emitter Leakage Current vs. Ambient Temperature Fig. 6 - VCE vs. IC, (Saturated) Fig. 7 - Normalized CTR vs. Ambient Temperature (Saturated, VCE = 0.4 V) Fig. 8 - Normalized CTR vs. Ambient Temperature (Non-Saturated, VCE = 5 V) Fig. 9 - Cut-off-Frequency (- 3 dB) vs. Collector Current Fig. 10 - ton, toff vs. Load Resistance (100 Ω to 20 000 Ω) 0.001 0.01 0.1 100 1000 10 000 - 55 - 40 - 25 -10 5 20 35 50 65 80 95 110 125 Tamb - Ambient Temperature (°C) Collector to Emitter Leakage Current I CE0 (nA) VCE = 40 V VCE = 24 V VCE = 12 V 83599 graph6 VCE (V) Collector Current (mA) IF = 1 mAIF = 2 mA IF = 5 mA IF = 10 mA IF = 25 mA 83599 graph7 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 - 55 - 40 - 25 - 10 20 35 50 65 80 95 110 125 Tamb- Ambient Temperature(°C) Normalized CTR IF = 5 mA IF = 10 mA IF = 1 mA Normalized to I = 10 mA T amb = 25 °C F 83599_08 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Normalized CTR -55 -40 -25 -10 5 20 35 50 65 80 95 110 125 Tamb (°C) Normalized to I = 10 mA T amb = 25 °C F IF = 1 mA IF = 5 mA IF = 10 mA 83599 graph9 100 1000 0.1 1.0 10 100 IC (mA) Cut-off-Frequency fctr (kHz) ILD1205,6 + 25 °C + 50 °C VCE = 5 V, Tamb = 25 °C 0 °C 83599 graph18 100 1000 0.1 1 10 100 Load Resistance (kΩ) ton, toff (µs) toff ton 83599 graph19

ILD1206T, ILD1207T www.vishay.com Vishay Semiconductors Rev. 2.0, 16-Apr-2021 6 Document Number: 83599 For technical questions, contact: optocoupler.answers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS (in millimeters) 0.91 0.36 4.32 1.14 6.6 R 0.13 1.27 i178020 ISO method A 40° 6.10 1.27 typ. 0.41 0.1 0.2 Lead coplanarity ± 0.001 max. 0.20 3.05 ± 0.05 CL R 0.25 max. 1.02 5° max. Pin one ID 3.91 ± 0.05 0.51 ± 0.10 2 plcs. 1.49 ± 0.05 3.18 ± 0.05

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