ILCT6 VISHAY | Alldatasheet
Document overview
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Technical content
Features
- Current Transfer Ratio, 50 % Typical Leakage Current, 1.0 nA Typical Two Isolated Channels Per Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals UL1577, File No. E52744 System Code H or J, Double Protection DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 CSA 93751 BSI IEC60950 IEC60065
Description
The ILCT6/ MCT6 is a two channel optocoupler for high density applications. Each channel consists of an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Sig- nal information, including a DC level, can be transmit- ted by the device while maintaining a high degree of electrical isolation between input and output. The ILCT6/ MCT6 is especially designed for driving medium-speed logic, where it may be used to elimi- nate troublesome ground loop and noise problems. It can also be used to replace relays and transformers in many digital interface applications, as well as ana- log applications such as CRT modulation. Order Information For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause pe rmanent damage to the device. Func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Part Remarks ILCT6 CTR ≥ 20 %, DIP-8 MCT6 CTR ≥ 20 %, DIP-8 ILCT6-X007 CTR ≥ 20 %, SMD-8 (option 7) ILCT6-X009 CTR ≥ 20 %, SMD-8 (option 9) MCT6-X007 CTR ≥ 20 %, SMD-8 (option 7) MCT6-X009 CTR ≥ 20 %, SMD-8 (option 9) Parameter Test condition Symbol Value Unit Rated forward current, DC 60 mA Peak forward current, DC 1.0 µs pulse, 300 pps I FM 3.0 A Power dissipation P diss 100 mW Derate linearly from 25 °C 1.3 mW/°C
www.vishay.com Document Number 83645 Rev. 1.4, 26-Oct-04 ILCT6/ MCT6 Vishay Semiconductors Output Coupler
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Parameter Test condition Symbol Value Unit Collector current I C 30 mA Collector-emitter breakdown voltage BV CEO 30 V Power dissipation P diss 150 mW Derate linearly from 25 °C 2m W / ° C Parameter Test condition Symbol Value Unit Isolation test voltage V ISO 5300 V RMS Isolation resistance V IO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Total package dissipation P tot 400 mW Derate linearly from 25 °C 5.33 mW/°C Storage temperature T stg - 55 to + 150 °C Operating temperature T amb - 55 to + 100 °C Lead soldering time at 260 °C 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 20 mA V F 1.25 1.50 V Reverse current V R = 3.0 V I R 0.1 10 µA Junction capacitance V F = 0 V C j 25 pF Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 10 µA, IE = 10 µAB V CEO 30 65 V Emitter-collector breakdown voltage IC = 10 µA, IE = 10 µAB V ECO 7.0 10 V Collector-emitter leakage current VCE = 10 V I CEO 1.0 100 nA Collector-emitter capacitance V CE = 0 V C CE 8.0 pf
www.vishay.com Document Number 83645 Rev. 1.4, 26-Oct-04 ILCT6/ MCT6 Vishay Semiconductors .315 (8.0) MIN. .300 (7.62) TYP. .180 (4.6) .160 (4.1) .331 (8.4) MIN. .406 (10.3) MAX. .028 (0.7) MIN. Option 7 18494 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15° max. Option 9
Rev. 1.4, 26-Oct-04 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Cl ean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423