IL66B_05 VISHAY | Alldatasheet
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Document Number: 83639 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 09-Nov-05 1 Optocoupler, Photodarlington Output, with Internal RBE IL66B Vishay Semiconductors
DESCRIPTION
The IL66B is an optically coupled isolator employing a gallium arsenide infrared emitter and a silicon photodarlington detector. Switching can be accomplished while maintaining a high degree of isolation between driving and load circuits. They can be used to replace reed and mercury relays with advantag es of long life, high speed switching and elimination of magnetic fields.
FEATURES
- Internal RBE for high stability Isolation test voltage, 5300 V RMS No base connection High isolation resistance Standard plastic DIP package Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS UL1577, file no. E52744 system code H or J, double protection BSI IEC 60950 IEC 60065 CSA 93751 DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1 F I M K O Note For additional information on the available options refer to option information. i179019 A C NC NC C E ORDER INFORMATION PART REMARKS IL66B-1 CTR > 200 %, DIP-6 IL66B-2 CTR > 750 %, DIP-6 IL66B-1X006 CTR > 200 %, DIP-6 400 mil (option 6) IL66B-2X006 CTR > 750 %, DIP-6 400 mil (option 6) IL66B-2X009 CTR > 750 %, SMD-6 (option 9) ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Peak reverse voltage VR 6.0 V Forward continuous current I F 60 mA Power dissipation Pdiss 100 mW Derate linearly from 55 °C 1.33 mW/°C OUTPUT Collector emitter breakdown voltage BV CEO 60 V Emitter collector breakdown voltage BV ECO 5.0 V Power dissipation Pdiss 200 mW Derate linearly from 25 °C 2.6 mW/°C
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83639 2 Rev. 1.5, 09-Nov-05 IL66B Vishay Semiconductors Optocoupler, Photodarlington Output, with Internal RBE Notes (1) Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute maximum ratings can cause per manent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Note Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requi rements. Typical values ar e characteristics of the device and are the result of eng ineering evaluation. Typical values are for information only and are not part of the testing requirements. COUPLER Isolation test voltage t = 1.0 s V ISO 5300 V RMS Isolation resistance VIO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Total dissipation Ptot 250 mW Derate linearly from 25 °C 3.3 mW/°C Creepage path 7m i n m m Clearance path 7m i n m m Storage temperature T stg - 55 to + 150 °C Operating temperature T amb - 55 to + 100 °C Solder Temperature (2) 10 s T sld 260 °C ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT
ELECTRICAL CHARACTERISTICS
MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 10 mA V F 1.25 1.5 V Reverse current V R = 3.0 V I R 0.01 100 µA Capacitance V R = 0 C O 25 pF OUTPUT Collector emitter breakdown voltage I C = 100 µA BV CEO 60 V Collector emitter leakage current V CE = 50 V, IF = 0 A I CEO 1.0 100 nA COUPLER Saturation voltage I C = 10 mA V CEsat 1.0 V CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Current transfer ratio I F = 2.0 mA, VCE = 5.0 V IL66B-1 CTR 200 % IL66B-2 CTR 750 1000 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Turn-On, Turn-Off time V CC = 10 V, IF = 2 mA, RL = 100 Ω ton, toff 200 µs
Document Number: 83639 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 09-Nov-05 3 IL66B Optocoupler, Photodarlington Output, with Internal RBE Vishay Semiconductors TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 3 - Forward Voltage vs. Forward Current Fig. 4 - Normalized Non-Saturated and Saturated CTRCE vs. LED Current Fig. 5 - Normalized Non-Saturated and Saturated CTRCE vs. LED Current Fig. 6 - Non-Saturated and Saturated Collector Emitter Current vs. LED Current Fig. 7 - High to low Propagation Delay vs. Collector Load Resistance and LED Current Fig. 8 - Low to High Propagation Delay vs. Collector Load Resistance and LED Current iil66_01 1001010.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 IF - Forward Current (mA) VF - Forward Voltage (V) TA = - 55 °C TA = 100 °C TA = 25 °C iil66b_02 1001010.1 0.0 0.5 1.0 1.5 2.0 VCE = 1 V VCE = 5 V IF - LED Current (mA) NCTRce - Normalized (CTRce) VCE = 5 V IF = 2 mA Normalized to: iil66b_03 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 10 100 1000 VCE = 5 V VCE = 0.4 V IF - LED Current (mA) NCTRce - Normalized (CTRce) VCE = 5 V IF = 10 mA Normalized to: iil66b_04 0.1 10 100 0.001 0.01 0.1 100 1000 10000 VCE = 5 V VCE = 0.4 V IF - LED Current (mA) Ice - Collector Emitter Current (mA) iil66b_05 10 15 20 220 Ω 10 KΩ IF - LED Current (mA) VCC = 5 V Vth = 1.5 V tpHL - High/Low Propagation Delay - µs 0 5 iil66b_06 10 15 20 100 125 150 220 KΩ 10 KΩ IF - LED Current (mA) tpLH - Low/High Propagation Delay - µs VCC = 5 V Vth = 1.5 V 2 KΩ
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83639 4 Rev. 1.5, 09-Nov-05 IL66B Vishay Semiconductors Optocoupler, Photodarlington Output, with Internal RBE PACKAGE DIMENSIONS in inches (millimeters) i178004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3.81) 0.031 (0.80) min. 0.300 (7.62) typ. 0.031 (0.80) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.018 (0.45) 0.022 (0.55) 0.048 0.022 (0.55) 0.248 (6.30) 0.256 (6.50) 0.335 (8.50) 0.343 (8.70) Pin one ID 654 123 18 ° 3°to 9° 0.300 to 0.347 (7.62 to 8.81) typ. ISO method A (0.45) 0.014(0.35) 0.010(0.25) 0.400(10.16) 0.430(10.92) 0.307(7.8) 0.291(7.4) 0.407 (10.36) 0.391 (9.96) Option 6 18493 min. 0.300 (7.62 ) ref. 0.375 (9.53) 0.395 (10.03 ) 0.0040 (0.102) 0.0098 (0.249) 15° max. Option 9 (0.249) 0.020 (0.51) 0.040 (1.02) 0.315 (8.00) 0.012 (0.30) typ.
Document Number: 83639 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 09-Nov-05 5 IL66B Optocoupler, Photodarlington Output, with Internal RBE Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.