IL66B VISHAY | Alldatasheet

Document overview

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Technical content

Features

  • Internal RBE for high stability  Isolation test voltage, 5300 V RMS  No base connection  High isolation resistance  Standard plastic DIP package  Lead-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals  UL1577, File No. E52744 System Code H or J, Double Protection  BSI IEC60950 IEC60065  CSA 93751  DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1  FIMKO

Description

The IL66B is an optically coupled isolator employing a gallium arsenide infrared emitter and a silicon pho- todarlington detector. Switching can be accomplished while maintaining a high degree of isolation between driving and load circuits. They can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Order Information For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause pe rmanent damage to the device. Func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Part Remarks IL66B-1 CTR > 200 %, DIP-6 IL66B-2 CTR > 750 %, DIP-6 IL66B-1X006 CTR > 200 %, DIP-6 400 mil (option 6) IL66B-2X006 CTR > 750 %, DIP-6 400 mil (option 6) IL66B-2X009 CTR > 750 %, SMD-6 (option 9) Parameter Test condition Symbol Value Unit Peak reverse voltage V R 6.0 V Forward continuous current I F 60 mA Power dissipation P diss 100 mW Derate linearly from 55 °C 1.33 mW/°C

www.vishay.com Document Number 83639 Rev. 1.5, 26-Oct-04 IL66B Vishay Semiconductors Output Coupler

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Current Transfer Ratio Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BV CEO 60 V Emitter-collector breakdown voltage BV ECO 5.0 V Power dissipation P diss 200 mW Derate linearly from 25 °C 2.6 mW/°C Parameter Test condition Symbol Value Unit Isolation test voltage t = 1.0 sec. V ISO 5300 V RMS Isolation resistance V IO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Total dissipation P tot 250 mW Derate linearly from 25 °C 3.3 mW/°C Creepage path 7m i n m m Clearance path 7m i n m m Storage temperature T stg - 55 to + 150 °C Operating temperature T amb - 55 to + 100 °C Lead soldering time at 260 °C T sld 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 10 mA V F 1.25 1.5 V Reverse current V R = 3.0 V I R 0.01 100 µA Capacitance V R = 0 C O 25 pF Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 100 µAB V CEO 60 V Collector-emitter leakage current VCE = 50 V, IF = 0 I CEO 1.0 100 nA Parameter Test condition Symbol Min Typ. Max Unit Saturation voltage I C = 10 mA V CEsat 1.0 V Parameter Test condition Part Symbol Min Typ. Max Unit Current Transfer Ratio I F = 2.0 mA, VCE = 5.0 V IL66B-1 CTR 200 % IL66B-2 CTR 750 1000 %

Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Non-saturated and Saturated CTRCE vs. Figure 3. Normalized Non-saturated and Saturated CTRCE vs. Figure 4. Non-Saturated and Saturated Collector Emitter Current Figure 5. High to low Propagation Delay vs. Collector Load Figure 6. Low to High Propagation Delay vs. Collector Load

10000 V c e=5V

10 KΩı

www.vishay.com Document Number 83639 Rev. 1.5, 26-Oct-04 IL66B Vishay Semiconductors Package Dimensions in Inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) Min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one ID 654 123 18° 3°–9° .300–.347 (7.62–8.81) typ. ISO Method A .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) Option 6 18493 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15° max. Option 9

Rev. 1.5, 26-Oct-04 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Cl ean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423