IL610 ETC | Alldatasheet

Document overview

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Technical content

Features

  • 40 Mbps Data Rate
  • Very Wide Input Voltage Range
  • Open Drain or CMOS Outputs
  • Failsafe Output (Logic high output for zero coil current )
  • Output Enable
  • 3.3 V or 5 V Power Supply
  • 2500 VRMS Isolation (1 Minute)
  • Low Power Dissipation
  • -40°C to 85°C Temperature Range
  • 20 kV/µs Typical Common Mode Rejection
  • UL1577 & IEC61010 Approval (pending)
  • Available in MSOP, SOIC, and PDIP Packages and as Bare Die

Applications

  • CAN Bus/ Device Net
  • General Purpose Opto Replacement
  • Wired-OR Alarms
  • SPI interface
  • I2C
  • RS 485, RS422, RS232
  • Digital Fieldbus
  • Size critical multi-channel applications

Description

The IL600 series are isolated signal couplers with CMOS or open drain transistor outputs which can be used to replace opto-couplers in many standard isolation functions. The devices are manufactured with NVE’s patented IsoLoop® GMR sensor technology giving exceptionally small size and low power dissipation. A single resistor is used to set maximum input current for input voltages above 0.5 V. The devices are available in SOIC, PDIP and MSOP packages and as bare die.

(1) Parameters Symbol Min. Typ. Max. Units Test Conditions Storage Temperature T S -55 150 °C Ambient Operating Temperature T A -55 125 °C Supply Voltage V DD -0.5 7 V Input Current I IN -25 25 mA Output Voltage V O -0.5 V CC+0.5 V Maximum Output Current I O -10 10 mA ESD 2 kV HBM Recommended Operating Conditions Parameters Symbol Min. Typ. Max. Units Test Conditions Ambient Operating Temperature T A -40 85 °C Supply Voltage V DD 3.0 5.5 V Input Current I IN 0 10 mA Output Current I OUT -4 4 mA Open Drain Reverse Voltage V SD -0.5 V Open Drain Voltage V DS 6.5 V Open Drain Load Current I OD 4 mA Input Signal Rise and Fall Times t IR, tIF 50 ms Common Mode Input Voltage V CM 400 V AC RMS Insulation Specifications Parameters Symbol Min. Typ. Max. Units Test Conditions Creepage Distance (external) MSOP 3.010 mm 0.15’’ SOIC 4.026 mm 0.30’’ SOIC 8.077 mm 0.30’’ PDIP 7.077 mm Internal Isolation Distance 9 µm Leakage Current 0.2 µARMS 240 VRMS, 60 Hz Barrier Impedance >10 14||7 Ω || pF Safety & Approvals IEC61010-1 TUV Certificate Numbers: Approval Pending Classification Model Package Pollution Degree Material Group Max. Working Voltage IL610-1, IL610A-1, IL611-1, IL611A-1 MSOP II III 100 V RMS IL610-2, IL610A-2, IL611-2, IL611A-2, IL612-2, IL612A-2 PDIP II III 300 V RMS IL613, IL614 SOIC (0.3") II III 300 V RMS IL610-3, IL610A-3, IL611-3, IL611A-3, IL612-3, IL612A-3 IL613-3, IL614-3 SOIC (0.15") II III 150 V RMS UL 1577 Component Recognition program. File #: Approval Pending Rated 2500VRMS for 1 minute (SOIC, PDIP), 1000VRMS for 1 minute (MSOP) Electrostatic Discharge Sensitivity This product has been tested for electrostatic sensitivity to the limits stated in the specifications. However, NVE recommends that all integrated circuits be handled with appropriate care to avoid damage. Damage caused by inappropriate handling or storage could range from performance degradation to complete failure.

IL610 and IL610A Pin Connections

1 NC No internal connection

2 IN+ Coil connection

3 IN- Coil connection

4 NC No internal connection

5 GND Ground return for V DD

6 OUT Data out

7 V OE Output enable. Internally held low with 100 kΩ

8 V DD Supply Voltage

IL611 and IL611A Pin Connections

1 IN 1+ Channel 1 coil connection

2 IN 1- Channel 1 coil connection

3 IN 2+ Channel 2 coil connection

4 IN 2- Channel 2 coil connection

6 OUT 2 Data out channel 2

7 OUT 1 Data out channel 1

IL612 and IL612A Pin Connections

1 IN 1 Data in, channel 1

2 V DD 1 Supply Voltage 1

3 OUT 2 Data out, channel 2

4 GND 1 Ground return for VDD1

5 GND 2 Ground return for V DD2

6 IN 2 Data in, channel 2

7 V DD 2 Supply Voltage 2

8 OUT 1 Data out, channel 1

2 * Internally connected to pin 8

3 IN 1- Channel 1 coil connection

4 IN 2+ Channel 2 coil connection

5 IN 2- Channel 2 coil connection

6 IN 3+ Channel 3 coil connection

7 IN 3- Channel 3 coil connection

8 * Internally connected to pin 2

9 GND Ground return for V DD (Internally

connected to pin 15)

10 OUT 3 Data out channel 3

11 NC No connection

12 V DD Supply Voltage. Pin 12 and pin 16 must be connected externally

13 OUT 2 Data out channel 2

14 OUT 1 Data out channel 1

15 GND Ground return for V DD (Internally

connected to pin 9) 16 V DD Supply Voltage. Pin 12 and pin 16 must be connected externally IL613 * Pins 2 and 8 internally connected ** Pins 9 and 15 internally connected

1 V DD1 Supply Voltage 1

2 GND 1 Ground return for VDD1 (Internally

connected to pin 8)

3 OUT 1 Data out channel 1

4 RE Channel 1 data output enable. Internally held low with 100 kΩ

5 IN 2 Data in channel 2

6 V coil Supply connection for channel 2 and

7 IN 3 Data in channel 3

8 GND 1 Ground return for VDD1 (Internally

connected to pin 2)

9 GND 2 Ground return for VDD2 (Internally

connected to pin 15)

12 V DD2 Supply Voltage 2

14 IN 1+ Coil connection

15 GND 2 Ground return for VDD2 (Internally

connected to pin 9)

16 IN 1- Coil connection

  • Pins 2 and 8 internally connected ** Pins 9 and 15 internally connected

Electrical Specifications are Tmin to Tmax unless otherwise stated. Parameters Symbol Min. Typ. Max. Units Test Conditions Coil Input Impedance Z COIL 47||8 55||9 67||10 Ω||nH TAMB = 25°C Temperature Coeff of Coil Resistance TC R COIL 0.16 0.165 Ω/°C Input Threshold for Logic High I IN H 2 mA Input Threshold for Logic Low I IN L 10 mA Quiescent Current IL610, IDD1 IL610, IDD2 IL611, IDD1 IL611, IDD2 IL612, IDD1 IL612, IDD2 IL613, IDD1 IL613, IDD2 IL614, IDD1 IL614, IDD2 µA mA µA mA mA mA µA mA mA mA V DD= 5 V, IIN=0 Quiescent Current IL610, I DD1 IL610, IDD2 IL611, IDD1 IL611, IDD2 IL612, IDD1 IL612, IDD2 IL613, IDD1 IL613, IDD2 IL614, IDD1 IL614, IDD2 1.3 2.6 1.3 1.3 1.3 2.6 µA mA µA mA mA mA µA mA mA mA VDD= 3.3 V, IIN=0 VDD-0.1 V DD V IO = -20 µA Logic High Output Voltage(4) VOH VDD V DD-0.5 I O = -4 mA 0 0.1 V IO = 20 µA Logic Low Output Voltage V OL 0.5 0.8 I O = 4 mA Logic Output Current IO 4 7 mA Switching Specifications CMOS Outputs Data Rate 40 Mbps 50% Duty Cycle Minimum Pulse Width PW 25 ns 50% Points, Vo Propagation Delay Input to Output (High to Low) tPHL 20 25 ns C L = 15 pF, ICOIL = 10 mA Propagation Delay Input to Output (Low to High) tPLH 20 25 ns C L = 15 pF, ICOIL = 10 mA Average Propagation Delay Drift 50 ps/°C Pulse Width Distortion |tPHL-tPLH| (2) PWD 7 10 ns C L = 15 pF Propagation Delay Skew (3) t PSK 10 20 ns C L = 15 pF Output Rise Time (10-90%) t R 2 4 ns C L = 15 pF Output Fall Time (10-90%) t F 2 4 ns C L = 15 pF Common Mode Transient Immunity |CM H|,|CML| 15 20 kV/µs VT = 300 Vpeak Switching Specifications Open Drain Outputs Parameters Symbol Min. Typ. Max. Units Test Conditions Data Rate 10 Mbps 50% Duty Cycle, Rpullup = 1 kΩ Minimum Pulse Width PW 100 ns 50% Duty Cycle, Rpullup = 1 kΩ Propagation Delay Input to Output (High to Low) tPHL 20 25 ns CL = 2 kΩ ||15 pF Propagation Delay Input to Output (Low to High) tPLH 50 75 ns CL = 2 kΩ ||15 pF Common Mode Transient Immunity |CM H|,|CML| 15 20 kV/µs VT = 300 Vpeak

Notes: 1. Absolute Maximum ambient operating te mperature means the device will not be damaged if operated under these conditions. It does not guarantee performance. 2. PWD is defined as |t PHL - tPLH|. %PWD is equal to the PWD divided by the pulse width. 3. t PSK is equal to the magnitude of the worst case difference in tPHL and/or tPLH that will be seen between units at 25°C. 4. The term V DD refers to the supply voltage on the output side of the isolated channel.

Single Phase Power Control

Inverting and Non-Inverting Circuits Differential to Single Ended Conversion

Package drawings, dimensions and specifications 8-pin MSOP Package 8-pin SOIC Package 8-pin PDIP Package

0.15" 16-pin SOIC 0.30" 16-pin SOIC

Ordering information and valid part numbers.

An ISO 9001 Certified Company NVE Corporation is a high technology components manufacturer having the unique capability to combine leading edge Giant Magnetoresistive (GMR) materials with integrated circuits to make high performance electronic components. Products include Magnetic Field Sensors, Magnetic Field Gradient Sensors (Gradiometer), Digital Magnetic Field Sensors, Digital Signal Isolators and Isolated Bus Transceivers. NVE is a leader in GMR research and in 1994 introduced the world’s first products using GMR material, a line of GMR magnetic field sensors that can be used for position, magnetic media, wheel speed and current sensing. NVE is located in Eden Prairie, Minnesota, a suburb of Minneapolis. Please visit our Web site at www.nve.com or call 952-829- 9217 for information on products, sales or distribution. NVE Corporation

11409 Valley View Road

Eden Prairie, MN 55344-3617 USA Telephone: (952) 829-9217 Fax: (952) 829-9189 Internet: www.nve.com e-mail: isoinfo@nve.com The information provided by NVE Corporation is believed to be accurate. However, no responsibility is assumed by NVE Corporation for its use, nor for any infringement of patents, nor rights or licenses granted to third parties, which may result from its use. No license is granted by implication, or otherwise, under any patent or patent rights of NVE Corporation. NVE Corporation does not authorize, nor warrant, any NVE Corporation product for use in life support devices or systems or other critical applications. The use of NVE Corporation’s products in such applications is understood to be entirely at the customer’s own risk. Specifications shown are subject to change without notice. ISB-DS-001-IL600-A January 28, 2005