IL4216_V01 VISHAY | Alldatasheet

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IL4216, IL4217, IL4218 www.vishay.com Vishay Semiconductors Rev. 1.9, 14-Jan-2022 1 Document Number: 83630 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Optocoupler, Phototriac Output, High dV/dt, Low Input Current LINKS TO ADDITIONAL RESOURCES

DESCRIPTION

The IL4216, IL4217, and IL4218 product family consists of an optically coupled GaAs IRLED to a photosensitive thyristor system with integrated noise suppression circuit. The thyristor system enables low trigger currents of 0.7 mA and features a dV/dt ratio of greater than 10 kV/μs and load voltages up to 800 V. The IL4216, IL4217, and IL4218 product family is a perfect microcontroller friendly solution to isolate low voltage logic from high voltage 120 V AC, 240 VAC, and 380 VAC lines and to control resistive, inductive, or capacitive AC loads like motors, solenoids, high power thyristors or TRIACs, and solid-state relays.

FEATURES

  • Low trigger current IFT = 0.7 mA (typ.)
  • I TRMS = 300 mA
  • High static dV/dt ≥ 10 000 V/μs
  • Load voltage up to 800 V
  • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

  • Solid-state relay
  • Lighting controls
  • Temperature controls
  • Solenoid / valve controls
  • AC motor drives / starters AGENCY APPROVALS
  • UL
  • cUL
  • CSA
  • DIN EN 60747-5-5 (VDE 0884-5) available with option 1
  • FIMKO Note (1) Also available in tubes, do not put T on the end MT2 MT1 NC A C NC 23128 333DDD3 D 3D Models Design Tools Related Documents Models Footprints Schematics

ORDERING INFORMATION

IL421#-X0## T PART NUMBER PACKAGE OPTION TAPE AND REEL AGENCY CERTIFIED / PACKAGE BLOCKING VOLTAGE V DRM (V) UL, cUL, FIMKO 600 700 800 DIP-6 IL4216 IL4217 IL4218 DIP-6, 400 mil, option 6 - - IL4218-X006 SMD-6, option 7 IL4216-X007T - - VDE, UL, cUL, FIMKO 600 700 800 DIP-6 IL4216-X001 - IL4218-X001 DIP-6, 400 mil, option 6 IL4216-X016 - - SMD-6, option 7 - - IL4218-X017T (1) SMD-6, option 9 - - IL4218-X019T (1) > 0.1 mm 10.16 mm > 0.7 mm 7.62 mm DIP Option 7 Option 6 Option 9

IL4216, IL4217, IL4218 www.vishay.com Vishay Semiconductors Rev. 1.9, 14-Jan-2022 2 Document Number: 83630 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes

  • Stresses in excess of the absolu te maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those give n in the operational sections of this document. Exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP) ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage V R 6V Forward current IF 60 mA Surge current IFSM 2.5 A Power dissipation Pdiss 100 mW Derate linearly from 25 °C 1.33 mW/°C Thermal resistance Rth 750 °C/W OUTPUT Peak off-state voltage IL4216 V DRM 600 V IL4217 V DRM 700 V IL4218 V DRM 800 V RMS on-state current IDRM 300 mA Single cycle surge ITSM 3A Power dissipation Pdiss 300 mW Derate linearly from 25 °C 6.6 mW/°C Thermal resistance Rth 150 °C/W COUPLER Storage temperature T stg -55 to +150 °C Ambient temperature Tamb -55 to +100 °C Lead soldering temperature (1) 5 s T sld 260 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 20 mA V F -1 . 3 1 . 5V Breakdown voltage I R = 10 μA V BR 63 0- V Reverse current V R = 6 V I R - 0.1 10 μA Input capacitance V F = 0 V, f = 1 MHz C IN -4 0-p F Thermal resistance, junction to lead R thjI -7 5 0- ° C / W OUTPUT Repetitive peak off-state voltage I DRM = 100 μA IL4216 V DRM 600 650 - V IL4217 V DRM 700 750 - V IL4218 V DRM 800 850 - V Off-state voltage I D(RMS) = 70 μA IL4216 V D(RMS) 424 460 - V IL4217 V D(RMS) 484 536 - V IL4218 V D(RMS) 565 613 - V Off-state current V D = 600 V, Tamb = 100 °C I D(RMS) - 10 100 μA Reverse current V R = 600 V, Tamb = 25 °C I RMS - 10 100 μA On-state voltage I T = 300 mA V TM -1 . 73 V On-state current PF = 1, V T(RMS) = 1.7 V I TM - - 300 mA Surge (non-repetitive, on-state current) f = 50 Hz I TSM --3 A Holding current V T = 3 V I H - 65 200 μA Latching current V T = 2.2 V I L - - 500 μA LED trigger current V AK = 5 V I FT -0 . 7-m A

IL4216, IL4217, IL4218 www.vishay.com Vishay Semiconductors Rev. 1.9, 14-Jan-2022 3 Document Number: 83630 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note

  • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of en gineering evaluation. Typical values are for information only and are not part of the testing requirements POWER FACTOR CONSIDERATIONS A snubber is not needed to eliminate false operation of the TRIAC driver because of the IL4216, IL4217, IL4218 high static and commutating dV/dt with loads between 1 and 0.8 power factors. When inductive loads with power factors less than 0.8 are being driven, include a RC snubber or a single capacitor directly across th e device to damp the peak commutating dV/dt spike. Normally a commutating dV/dt causes a turning-off device to stay on due to the stored energy remaining in the turning-off device. Fig. 1 - Shunt Capacitance vs. Load Current vs. Power Factor Note the safety ratings shall be ensured by means of protective circuits OUTPUT Critical rate of rise of off-state voltage V D = 0.67 VDRM, Tamb = 25 °C dV/dt cr 10 000 - - V/μs VD = 0.67 VDRM, Tamb = 80 °C dV/dt cr 5000 - - V/μs Critical rate of rise of voltage at current commutation V D = 230 VRMS, ID = 300 mARMS, TJ = 25 °C dV/dtcrq -8- V / μ s VD = 230 VRMS, ID = 300 mARMS, TJ = 85 °C dV/dtcrq -7- V / μ s Critical rate of rise of on-state current commutation VD = 230 VRMS, ID = 300 mARMS, TJ = 25 °C dI/dtcrq -1 2- A / m s Thermal resistance, junction to lead R thjI -1 5 0- ° C / W COUPLER Capacitance (input to output) f = 1 MHz, V IO = 0 V C IO -0 . 8-p F Critical rate of rise of coupled input to output voltage IT = 0, VRM = VDM = 300 VAC dV(IO)/dt 5000 1 - mA ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT iil4116_07 400350300250200150100500 I - Load Current (mA) CS - Shunt Capacitance (µF) L 0.001 0.01 0.1 PF = 0.3 IF = 2.0 mA SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Climatic classification Accordin g to IEC 68 part 1 55 / 100 / 21 Comparative tracking index CTI 175 Maximum rated withstanding isolation voltage t = 1 min V ISO 4420 V RMS Maximum transient isolation voltage V IOTM 8000 V peak Maximum repetitive peak isolation voltage V IORM 890 V peak Isolation resistance VIO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Output safety power PSO 500 mW Input safety current ISI 250 mA Safety temperature TS 175 °C Creepage distance DIP-6; SMD-6, option 7; SMD-6, option 9 ≥ 7m m DIP-6, 400 mil, option 6 ≥ 8m m Clearance distance DIP-6; SMD-6, option 7; SMD-6, option 9 ≥ 7m m DIP-6, 400 mil, option 6 ≥ 8m m Insulation thickness DTI ≥ 0.4 mm

IL4216, IL4217, IL4218 www.vishay.com Vishay Semiconductors Rev. 1.9, 14-Jan-2022 4 Document Number: 83630 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 2 - LED Forward Current vs. Forward Voltage Fig. 3 - Forward Voltage vs. Forward Current Fig. 4 - Peak LED Current vs. Duty Factor, τ Fig. 5 - Maximum LED Power Dissipation Fig. 6 - On-State Terminal Voltage vs. Terminal Current Fig. 7 - Maximum Output Power Dissipation iil4116_01 1.41.31.21.1 VF - LED Forward Voltage (V) IF - LED Current (mA) 1.0 iil4116_02 1001010.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 IF - Forward Current (mA) VF - Forward Voltage (V) TA = - 55 °C TA = 100 °C TA = 25 °C iil4116_03 10-6 10-5 10-4 10-3 10-2 10-1 100 101 100 1000 10 000 t - LED Pulse Duration (s) If(pk) - Peak LED Current (mA) 0.005 0.05 0.02 0.01 0.1 0.2 0.5 Duty Factor t τ DF = /tτ iil4116_04 100806040200-20-40-60 100 150 T - Ambient Temperature (°C) PLED - LED Power (mW) A 500 400 300 200 100 -100 -200 -300 -400 -500 -3 -1 -2 0 1 2 3 iil4116_05 VT - On-State Voltage - VRMS IT - On-Site Current - mARMS iil4116_06 100806040200-20-40-60 150 250 T - Ambient Temperature (°C) PLED- LED Power (mW) A 100 200 300

IL4216, IL4217, IL4218 www.vishay.com Vishay Semiconductors Rev. 1.9, 14-Jan-2022 5 Document Number: 83630 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters i178004 0.25 typ. 2.95 ± 0.5 3.555 ± 0.255 0.8 min. 7.62 typ. 0.85 ± 0.05 2.54 typ. 1 min. 0.5 ± 0.05 6.4 ± 0.1 8.6 ± 0.1 Pin one ID 654 123 18° 3° to 9° 7.62 to 8.81 4° typ. ISO method A 1.2 ± 0.1 8 min. 0.51 1.02 7.62 ref. 9.53 10.03 0.25 typ. 0.102 0.249 15° max. Option 9 0.35 0.25 10.16 10.92 7.8 7.4 10.36 9.96 Option 6 8 min. 7.62 typ. 4.6 4.18.4 min. 10.3 max. 0.7 Option 7 18450

IL4216, IL4217, IL4218 www.vishay.com Vishay Semiconductors Rev. 1.9, 14-Jan-2022 6 Document Number: 83630 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SOLDER PROFILES Fig. 8 - Wave Soldering Double Wave Profile According to J-STD-020 for DIP Devices Fig. 9 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 for SMD Devices HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 Floor life: unlimited Conditions: T amb < 30 °C, RH < 85 % Moisture sensitivity level 1, according to J-STD-020 948626-1 100 1000 10000 100 200 300 0 50 100 150 200 250 TTW Soldering (according to CECC00802) 1st line 2nd line 2nd line Temperature (°C) Time (s) 150 250

2 K/s

Full line: typical Dotted lines: process limits Lead temperature 235 °C to 260 °C100 °C to 130 °C ca. 200 K/s Forced cooling ca. 5 K/s ca. 2 K/s 240 °C Max. 260 °C 217 °C 255 °C 19841-1 100 1000 10000 100 200 300 0 50 100 150 200 300 Axis Title 1st line 2nd line 2nd line Temperature (°C) Time (s) 150 250 250 245 °C Max. 100 s Max. 30 s Max. 120 s Max. ramp down 6 °C/s Max. ramp up 3 °C/s

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