IL4217-X007

IL4216 VISHAY | Alldatasheet

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Technical content

Document Number: 83630 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.4, 09-Jan-08 1 Optocoupler, Phototriac Output, High dV/dt, Very Low Input Current IL4216/IL4217/IL4218 Vishay Semiconductors

DESCRIPTION

The IL4216/IL4217/IL4218 consists of an AlGaAs IRLED optically coupled to a pair of photosensitive non-zero crossing SCR chips and are connected inversely parallel to form a TRIAC. These three semiconductors are assembled in a six pin 0.3 inch dual in-line package. High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 1.3 mA (DC). The IL4216/IL4217/IL4218 uses two discrete SCRs resulting in a commutating dV/dt of greater than 10 kV/µs. The use of a proprietary dV/dt clamp results in a static dV/dt of greater than 10 kV/µs. This clamp ci rcuit has a MOSFET that is enhanced when high dV/dt spikes occur between MT1 and MT2 of the TRIAC. The FET clamps the base of the phototransistor when conducting, disabling the internal SCR predriver. The blocking voltage of up to 800 V permits control of off-line voltages up to 240 VAC, with a safety factor more than two, and is sufficient for as much as 380 VAC. Current handling capability is up to 300 mA RMS, continuous at 25 °C. The IL4216/IL4217/IL4218 isolat es low-voltage logic from 120, 240, and 380 VAC lines to control resistive inductive, or capacitive loads including moto rs solenoids, high current thyristors or TRIAC and relays.

FEATURES

 High input sensitivity I FT = 1.3 mA  300 mA on-state current  High static dV/dt 10000 V/µs, typical  Inverse parallel SCRs provide commutating dV/dt > 10 kV/ µs  Very Low Leakage < 10 µA  Isolation test voltage 5300 V RMS  Lead (Pb)-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

 Solid state relay  Industrial controls  Office equipment  Consumer appliances AGENCY APPROVALS  UL1577, file no. E52744 system code J  CSA 93751  DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1  BSI IEC 60950; IEC 60065 F I M K O Note For additional information on the available options refer to option information. i179041 MT2 MT1 NC A C NC ORDER INFORMATION PART REMARKS IL4216 600 V VDRM, DIP-6 IL4217 700 V VDRM, DIP-6 IL4218 800 V VDRM, DIP-6 IL4216-X006 600 V V DRM, DIP-6 400 mil (option 6) IL4216-X009 600 V V DRM, SMD-6 (option 9) IL4217-X007 700 V V DRM, SMD-6 (option 7) IL4217-X009 700 V V DRM, SMD-6 (option 9) IL4218-X006 800 V V DRM, DIP-6 400 mil (option 6) IL4218-X007 800 V V DRM, SMD-6 (option 7) IL4218-X009 800 V V DRM, SMD-6 (option 9)

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83630 2 Rev. 1.4, 09-Jan-08 IL4216/IL4217/IL4218 Vishay Semiconductors Optocoupler, Phototriac Output, High dV/dt, Very Low Input Current Notes (1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause per manent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage VR 6.0 V Forward current IF 60 mA Surge current IFSM 2.5 A Power dissipation Pdiss 100 mW Derate linearly from 25 °C 1.33 mW/°C Thermal resistance Rth 750 °C/W OUTPUT Peak off-state voltage IL4216 V DRM 600 V IL4217 V DRM 700 V IL4218 V DRM 800 V RMS on-state current IDRM 300 mA Single cycle surge ITSM 3.0 A Power dissipation Pdiss 300 mW Derate linearly from 25 °C 6.6 mW/°C Thermal resistance Rth 150 °C/W COUPLER Creepage distance ≥ 7.0 mm Clearance ≥ 7.0 mm Storage temperature Tstg - 55 to + 150 °C Ambient temperature Tamb - 55 to + 100 °C Isolation test voltage VISO 5300 V RMS Isolation resistance VIO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Lead soldering temperature (2) 5.0 s T sld 260 °C

Document Number: 83630 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.4, 09-Jan-08 3 IL4216/IL4217/IL4218 Optocoupler, Phototriac Output, High dV/dt, Very Low Input Current Vishay Semiconductors Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are test ing requirements. Typical values are characteri stics of the device and are the result of eng ineering evaluation. Typical values are for information only and are not part of the testing requirements.

ELECTRICAL CHARACTERISTICS

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 20 mA V F 1.3 1.5 V Breakdown voltage I R = 10 µA V BR 6.0 30 V Reverse current V R = 6.0 V I R 0.1 10 µA Input capacitance V F = 0 V, f = 1.0 MHz C IN 40 pF Thermal resistance, junction to lead R thjI 750 °C/W OUTPUT Repetitive peak off-state voltage I DRM = 100 µA IL4216 V DRM 600 650 V IL4217 V DRM 700 750 V IL4218 V DRM 800 850 V Off-state voltage I D(RMS) = 70 µA IL4216 V D(RMS) 424 460 V IL4217 V D(RMS) 484 536 V IL4218 V D(RMS) 565 613 V Off-state current V D = 600 V, Tamb = 100 °C I D(RMS) 10 100 µA Reverse current V R = 600 V, Tamb = 25 °C I RMS 10 100 µA On-state voltage I T = 300 mA V TM 1.7 3.0 V On-state current PF = 1.0, V T(RMS) = 1.7 V I TM 300 mA Surge (non-repetitive, on-state current) f = 50 Hz I TSM 3.0 A Holding current V T = 3.0 V I H 65 200 μA Latching current V T = 2.2 V I L 5.0 mA LED trigger current V AK = 5.0 V I FT 0.7 1.3 mA Critical rate of rise of off-state voltage VD = 0.67 VDRM, Tamb = 25 °C dV/dt cr 10000 V/µs VD = 0.67 VDRM, Tamb = 80 °C dV/dt cr 5000 V/µs Critical rate of rise of voltage at current commutation VD = 0.67 VDRM, dI/dtcrq ≤ 15 A/ms, Tamb = 25 °C dV/dtcrq 10000 V/µs VD = 0.67 VDRM, dI/dtcrq ≤ 15 A/ms, Tamb = 80 °C dV/dtcrq 5000 V/µs Off-state current I T = 300 mA dI/dt 100 A/ms Thermal resistance, junction to lead R thjI 150 °C/W COUPLER Capacitance (input to output) f = 1.0 MHz, V IO = 0 V C IO 0.8 pF Critical rate of rise of coupled input to output voltage IT = 0, VRM = VDM = 300 VAC dV (IO)/dt 5000 1.0 mA

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83630 4 Rev. 1.4, 09-Jan-08 IL4216/IL4217/IL4218 Vishay Semiconductors Optocoupler, Phototriac Output, High dV/dt, Very Low Input Current POWER FACTOR CONSIDERATIONS A snubber is not needed to eliminate false operation of the TRIAC driver because of the IL4216/IL4217/IL4218 high static and commutating dV/dt with loads between 1 and 0.8 power factors. When inductive loads with power factors less than 0.8 are being driven, include a RC snubber or a single capacitor directly across the device to damp the peak commutating dV/dt spike. No rmally a commutating dV/dt causes a turning-off device to stay on due to the stored energy remaining in the turning-off device. But in the case of a zero voltage crossing optotriac, the commutating dV/dt spikes can inhibit one half of the TRIAC from turning on. If the spike potential exceeds the inhibit voltage of the zero cross detection circuit, half of the TRIAC will be held-off and not turn-on. This hold-off condition can be eliminated by using a snubber or capacitor placed directly across the optotriac as shown in Figure 1. Note that the value of the capacitor increases as a function of the load current. The hold-off condition also can be eliminated by providing a higher level of LED drive current. The higher LED drive provides a larger photocurrent which causes. The phototransistor to turn-on before the commutating spike has activated the zero cross net work. Figure 8 shows the relationship of the LED drive for power factors of less than 1.0. The curve shows that if a device requires 1.5 mA for a resistive load, then 1.8 times (2.7 mA) that amount would be required to control an inductive load whose power factor is less than 0.3. Fig. 3 - Shunt Capacitance vs. Load Current vs. Power Factor Fig. 4 - Normalized LED Trigger Current TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 5 - LED Forward Current vs. Forward Voltage Fig. 6 - Forward Voltage vs. Forward Current iil4116_07 400350300250200150100500 I - Load C urrent (mA) CS - Shunt Capacitance (µF) L 0.001 0.01 0.1 PF = 0.3 IF = 2.0 mA iil4116_08 PF - Power Factor FthNI - Normalized LED Trigger Current 0.8 1.2 1.6 2.0 1.0 1.4 1.8 I Normalized to I at PF = 1.0Fth Fth iil4116_01 1.41.31.21.1 V - LED Forward Voltage (V) I - LED C urrent (mA) 1.0 F F iil4116_02 1001010.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 IF - Forward Current (mA) VF - Forward Voltage (V) TA = - 55 °C TA = 100 °C TA = 25 °C

Document Number: 83630 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.4, 09-Jan-08 5 IL4216/IL4217/IL4218 Optocoupler, Phototriac Output, High dV/dt, Very Low Input Current Vishay Semiconductors Fig. 7 - Peak LED Current vs. Duty Factor, τ Fig. 8 - Maximum LED Power Dissipation Fig. 9 - On-State Terminal Voltage vs. Terminal Current Fig. 10 - Maximum Output Power Dissipation iil4116_03 10- 6 10- 5 10- 4 10- 3 10 - 2 10- 1 100 101 100 1000 10000 t - LED Pulse Duration (s) I - Peak LED C urrent (mA) 0.005 0.05 0.02 0.01 0.1 0.2 0.5 Duty Factor t τ DF =/ tτ f(pk) iil4116_04 100806040200- 20- 40- 60 100 150 T - Am bient Temperature (°C) PLED - LED Power (mW) A 500 400 300 200 100 - 100 - 200 - 300 - 400 - 500 - 3 - 1 - 2 0 1 2 3 iil4116_05 VT - On-State Voltage - V(RMS) IT - On-Site Current - mA(RMS) iil4116_06 100806040200- 20- 40- 60 150 250 T - Am bient Temperature (°C) PLED - LED Power (mW) A 100 200 300

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83630 6 Rev. 1.4, 09-Jan-08 IL4216/IL4217/IL4218 Vishay Semiconductors Optocoupler, Phototriac Output, High dV/dt, Very Low Input Current PACKAGE DIMENSIONS in inches (millimeters) i178004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3.81) 0.031 (0.80) min. 0.300 (7.62) typ. 0.031 (0.80) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.018 (0.45) 0.022 (0.55) 0.048 0.022 (0.55) 0.248 (6.30) 0.256 (6.50) 0.335 (8.50) 0.343 (8.70) Pin one ID 654 123 18 ° 3° to 9° 0.300 to 0.347 (7.62 to 8.81) typ. ISO method A (0.45) min. 0.315 ( 8.00) 0.020 (0.51 ) 0.040 (1.02 ) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03 ) 0.012 (0.30 ) typ. 0.0040 (0.102) 0.0098 (0.249) 15° max. Option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7.8) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) Option 6 0.315 (8.0) min. 0.300 (7.62) typ. 0.180 (4.6) 0.160 (4.1) 0.331 (8.4) min. 0.406 (10.3) max. 0.028 (0.7) min. Option 7 18450

Document Number: 83630 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.4, 09-Jan-08 7 IL4216/IL4217/IL4218 Optocoupler, Phototriac Output, High dV/dt, Very Low Input Current Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.