IL410

IL410 VISHAY | Alldatasheet

Document overview

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Technical content

Features

• High Input Sensitivity I FT = 2.0 mA, PF = 1.0 I FT = 5.0 mA, PF ≤ 1.0  300 mA On-State Current  Zero Voltage Crossing Detector  600/800 V Blocking Voltage  High Static dV/dt 10 kV/ µs  Inverse Parallel SCRs Provide Commutating dV/dt >10 kV/µs  Very Low Leakage < 10 µA  Isolation Test Voltage 5300 V RMS  Small 6-Pin DIP Package  Lead-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals  UL1577, File No. E52744 System Code H or J, Double Protection  CSA 93751  BSI IEC60950 IEC60065  DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1  FIMKO

Applications

Consumer appliances.

Description

The IL410/ IL4108 consists of a GaAs IRLED optically coupled to a photosensitive zero crossing TRIAC net- work. The TRIAC consists of two inverse parallel con- nected monolithic SCRs. These three semi- conductors are assembled in a six pin dual in-line package. High input sensitivity is ac hieved by using an emitter follower phototransistor and a cascaded SCR pre- driver resulting in an LED trigger current of less than 2.0 mA (DC). The IL410/ IL4108 uses two discrete SCRs resulting in a commutating dV/dt greater than 10 kV/ µs. The use of a proprietary dV/dt clamp results in a static dV/ dt of greater than 10 kV/ µs. This clamp circuit has a MOSFET that is enhanced when high dV/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET clamps the base of the pho- totransistor, disabling the first stage SCR predriver. The zero cross line voltage detection circuit consists of two enhancement MOSFETS and a photodiode. The inhibit voltage of the network is determined by the enhancement voltage of the N-channel FET. The P- channel FET is enabled by a photocurrent source that permits the FET to conduct the main voltage to gate on the N-channel FET. Once the main voltage can enable the N-channel, it clamps the base of the pho- totransistor, disabling the first stage SCR predriver. The 600/800 V blocking voltage permits control of off- line voltages up to 240 VAC, with a safety factor of more than two, and is sufficient for as much as 380 VAC. The IL410/ IL4108 isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive, inductive, or capacitive lo ads including motors, sole- noids, high current thyristors or TRIAC and relays.

www.vishay.com Document Number 83627 Rev. 1.4, 26-Apr-04 IL410/ IL4108 Vishay Semiconductors Order Information For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can caus e permanent damage to the device. F unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Coupler Part Remarks IL410 600 V V DRM, DIP-6 IL4108 800 V V DRM, DIP-6 IL410-X006 600 V V DRM, DIP-6 400 mil (option 6) IL410-X007 600 V V DRM, SMD-6 (option 7) IL410-X009 600 V V DRM, SMD-6 (option 9) IL4108-X006 800 V V DRM, DIP-6 400 mil (option 6) IL4108-X007 800 V V DRM, SMD-6 (option 7) IL4108-X009 800 V V DRM, SMD-6 (option 9) Parameter Test condition Symbol Value Unit Reverse voltage V R 6.0 V Forward current I F 60 mA Surge current I FSM 2.5 A Power dissipation P diss 100 mW Derate from 25 °C 1.33 mW/°C Parameter Test condition Part Symbol Value Unit Peak off-state voltage IL410 V DM 600 V IL4108 V DM 800 V RMS on-state current I TM 300 mA Single cycle surge current 3.0 A Total power dissipation P diss 500 mW Derate from 25 °C 6.6 mW/°C Parameter Test condition Symbol Value Unit Isolation test voltage (between emitter and detector, climate per DIN 500414, part 2, Nov. 74) t = 1.0 min. V ISO 5300 V RMS Pollution degree (DIN VDE 0109) Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm

Rev. 1.4, 26-Apr-04 Vishay Semiconductors www.vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Comparative tracking index per DIN IEC 112/VDE 0303 part 1, group IIIa per DIN VDE 6110 ≥ 175 Isolation resistance V IO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Storage temperature range T stg - 55 to + 150 °C Ambient temperature range T amb - 55 to + 100 °C Soldering temperature max. ≤ 10 sec. dip soldering ≥ 0.5 mm from case bottom Tsld 260 °C Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 10 mA V F 1.16 1.35 V Reverse current V R = 6.0 V I R 0.1 10 µA Input capacitance V F = 0 V, f = 1.0 MHz C IN 25 pF Thermal resistance, junction to ambient Rthja 750 °C/W Parameter Test condition Part Symbol Min Typ. Max Unit Off-state voltage I D(RMS) = 70 µA IL410 V D(RMS) 424 460 V IL4108 V D(RMS) 565 V Repetitive peak off-state voltage I DRM = 100 µA IL410 V DRM 600 V IL4108 V DRM 800 V Off-state current V D = VDRM, Tamb = 100 °C, IF = 0 mA ID(RMS)1 10 100 µA VD = VDRM, IF = Rated IFT ID(RMS)2 200 µA On-state voltage I T = 300 mA V TM 1.7 3.0 V On-state current PF = 1.0, V T(RMS) = 1.7 V I TM 300 mA Surge (non-repetitive), on-state current f = 50 Hz I TSM 3.0 A Trigger current 1 V D = 5.0 V I FT1 2.0 mA Trigger current 2 V OP = 220 V, f = 50 Hz, TJ = 100 °C, tpF > 10 ms IFT2 6.0 mA Trigger current temp. gradient ∆IFT1/∆Tj 7.0 14 µA/°C ∆IFT2/∆Tj 7.0 14 µA/°C Inhibit voltage temp. gradient ∆VDINH/∆Tj -20 mV/°C Off-state current in inhibit state I F = IFT1, VDRM IDINH 50 200 µA Holding current I H 65 500 µA Latching current V T = 2.2 V I L 5.0 mA Zero cross inhibit voltage I F = Rated IFT VIH 15 25 V Turn-on time V RM = VDM = VD(RMS) ton 35 µs Turn-off time PF = 1.0, I T = 300 mA t off 50 µs Parameter Test condition Symbol Value Unit

device to damp the peak commutating dV/dt spike. Figure 1. Shunt Capacitance vs. Load Current

www.vishay.com Document Number 83627 Rev. 1.4, 26-Apr-04 IL410/ IL4108 Vishay Semiconductors connected to the line by transfo rmers and which are not mechani- cally interrupted. In such cases as well as in applications with a resistive load the cor- responding protective circuits can be neglected. Control And Turn-On Behavior The trigger current of the IL410/ IL4108 has a positive temperature gradient. The time which expires from applying the control current to the turn-on of the load current is defined as the trigger delay time (t gd). On the whole this is a function of the overdrive meaning the ratio of the applied control current versus the trig- ger current (I F/IFT). If the value of the control current corresponds to that of the individual trigger current of IL410/4108 turn-on delay times amounts to a few mil- liseconds only. The shortest times of 5.0 to 10 µs can be achieved for an overdrive greater or equal than 10. The trigger delay time rise s with an increase in tem- perature. For very short control current pulses (t plF < 500 µs) a correspondingly higher control current must be used. Only the IL410/ IL4108 without zero voltage switch is suitable for this operating mode. Zero Voltage Switch The IL410/ IL4108 with zero voltage switch can only be triggered during the zero crossing the sine AC volt- age. This prevents current spikes, e.g. when turning- on cold lamps or capacitive loads. Direct switching operation: The IL410/ IL4108 switch is mainly suited to co ntrol synchronous motors, valves, relays and solenoids in Grätz circuits. Due to the low latching current (500 µA) and the lack of an RC circuit at the output, very low load currents can easily be switched. Indirect switching operation: The IL410/ IL4108 switch acts here as a driver and thus enables the driv- ing of thyristors and triacs of higher performance by microprocessors. The driving current pulse should not exceed the maximum permissible surge current of the IL410/ IL4108. For this reason, the IL410/ IL4108 without zero voltage switch often requires current lim- iting by a series resistor. The favorably low latching current in this operating mode results in AC current switches which can handle load currents from some milliamperes up to high cur- rents. Application Note  Over voltage protection: A voltage-limiting varistor (e.g. SIO VS05K250) which directly connected to the IL410/ IL4108 can protect the component against overvoltage.

Rev. 1.4, 26-Apr-04 Vishay Semiconductors www.vishay.com Package Dimensions in Inches (mm) i178014 .008 (.20) .012 (.30) .130 (3.30) .150 (3.81) .130 (3.30) .150 (3.81) .033 (0.84) typ. .300 (7.62) typ. .033 (0.84) typ. .100 (2.54) typ .039 (1.00) Min. .018 (0.46) .020 (0.51) .048 (1.22) .052 (1.32) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one ID 654 123 18° 3°–9° .300–.347 (7.62–8.81) typ . ISO Method A min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15° max. Option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) Option 6 .315 (8.0) MIN. .300 (7.62) TYP. .180 (4.6) .160 (4.1) .331 (8.4) MIN. .406 (10.3) MAX. .028 (0.7) MIN. Option 7 18450

www.vishay.com Document Number 83627 Rev. 1.4, 26-Apr-04 IL410/ IL4108 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423