IL256AT

IL256AT VISHAY | Alldatasheet

Document overview

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Technical content

Features

• Guaranteed CTR Symmetry, 2:1 Maximum  Bidirectional AC Input Industry Standard SOIC-8 Surface Mountable Package  Standard Lead Spacing, .05 "  Available only on Tape and Reel (Conform to EIA Standard RS481A) Agency Approvals  UL File #E52744 System Code Y  CSA 93751  DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1  FIMKO

Applications

Telecom applications ring detection

Description

The IL256A is an AC input phototransistor optocou- pler. The device consists of two infrared emitters con- nected in reverse parallel and coupled to a silicon NPN phototransistor detector. These circuit elements are constructed with a stan- dard SOIC-8 foot print. The product is well suited for telecom applications such as ring detection or off/on hook status, given its bidirectional LED input and guaranteed current trans- fer ratio (CTR) minimum of 20 % at I F = 10 mA. Order Information For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause per manent damage to the device. F unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Part Remarks IL256AT CTR > 20 %, Tape and reel, SOIC-8 Parameter Test condition Symbol Value Unit Forward continuous current I F 60 mA Power dissipation P diss 90 mW Derate linearly from 25 °C 0.8 mW/°C

www.vishay.com Document Number 83620 Rev. 1.4, 22-Apr-04 VISHA YIL256AT Vishay Semiconductors Output Coupler

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Current Transfer Ratio Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BV CEO 30 V Emitter-collector breakdown voltage BV ECO 5.0 V Collector-base breakdown voltage BV CBO 70 V Power dissipation P diss 150 mW Derate linearly from 25 °C 2.0 mW/°C Parameter Test condition Symbol Value Unit Total package dissipation (LED + detector) P tot 240 mW Derate linearly from 25 °C 3.2 mW/°C Storage temperature T stg - 55 to + 150 °C Operating temperature T amb - 55 to + 100 °C Soldering time at 260 °C 10 sec. Parameter Test condition Symbol Min Ty p. Max Unit Forward voltage I F = ± 10 mA V F 1.2 1.5 V Parameter Test condition Symbol Min Ty p. Max Unit Collector-emitter breakdown voltage I C = 1.0 mA BV CEO 30 50 V Emitter-collector breakdown voltage I E = 100 µAB V ECO 5.0 10 V Collector-base breakdown voltage I C = 100 µAB V CBO 70 90 V Collector-emitter leakage current V CE = 10 V I CEO 5.0 50 nA Parameter Test condition Symbol Min Ty p. Max Unit Saturation voltage, collector- emitter IF = ± 16 mA, IC = 2.0 mA V CEsat 0.4 V Isolation voltage, input to output V ISO 3000 V RMS Parameter Test condition Symbol Min Ty p. Max Unit DC Current Transfer Ratio I F = ± 10 mA, VCE = 5.0 V CTR DC 20 % Symmetry (CTR at + 10 mA)/ (CTR at -10 mA) 0.5 1.0 2.0

Rev. 1.4, 22-Apr-04 Vishay Semiconductors www.vishay.com Typical Characteristics (Tamb = 25 °C unless otherwise specified) Fig. 1 LED Forward Current vs.Forward Voltage Fig. 2 Forward Voltage vs. Forward Current Fig. 3 Peak LED Current vs. Duty Factor, Tau iil256at_01 -20 -40 -60 –55°C VF - LED Forward Voltage - V IF - LED Forward Current - mA 85°C 25°C iil256at_02 .1 1 10 100 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 IF - Forward Current - mA VF - Forward Voltage - V TA = –55°C TA = 100°C TA =2 5 ° C iil256at_03 10-6 10-5 10-4 10-3 10-2 10-1 100 101 10000 1000 100 t - LED Pulse Duration - s If(pk) - Peak LED Current - mA .005 ˇ D F=/ t τ.05 .02 .01 Duty F actor t Fig. 4 Normalized CTR vs. I F and Tamb Fig. 5 Normalized Saturated CTR Fig. 6 Normalized CTR cb iil256at_04 .1 1 10 100 2.0 1.5 1.0 0.5 0.0 IF - LED Current - mA Normalized CTR TA = 25°C TA = 50°C TA = 70°C TA = 100°C Normaliz ed to: IF = 10 mA, V CE =10 V TA = 25°C iil256at_05 .1 1 10 100 1.0 0.8 0.6 0.4 0.2 0.0 IF - LED Current - mA Normalized CTR Normaliz ed to: IF = 10 mA, V CE =10 V TA = 25°C VCE(sat) =0.4 VTA = 25°C TA = 50°C TA = 70°C TA = 100°C iil256at_06 .1 1 10 100 1.5 1.0 0.5 0.0 TA = 25°C TA = 50°C TA = 70°C IF - LED Current - mA Normalized CTRcb No rmaliz ed to: IF =1 0m A

www.vishay.com Document Number 83620 Rev. 1.4, 22-Apr-04 VISHA YIL256AT Vishay Semiconductors Fig. 7 Photocurrent vs. LED Current Fig. 8 Base Current vs. I F and HFE Fig. 9 Normalized HFE vs. Base Current and Temp. iil256at_07 .1 1 10 100 1000 100 25°C 70°C IF - LED Current - mA ICB - Photocurrent - µA iil256at_08 1 10 100 1000 700 600 500 400 300 200 100 100 IB - Base Current - µA HFE - Transistor Gain IF - LED Current - mA VCE = 0.4 V iil256at_09 1 1 0 100 1000 1.2 1.0 0.8 0.6 0.4 NHFE -20°C NHFE 25°C NHFE 50°C NHFE 70°C IB - Base Current -µA Normalized HFE No rmaliz ed to: IB =1 0µA VCE =1 0 Fig. 10 Normalized Saturated HFE vs. Base Current Fig. 11 Base Emitter Voltage vs. Base Current Fig. 12 Collector-Emitter Leakage Current vs.Temp. iil256at_10 1 10 100 1000 1.5 1.0 0.5 0.0 TA = -20°C TA = 25°C TA = 50°C TA = 70°C IB - Base Current -µA Normalized Saturated HF Normalized to: HFE at VCE =1 0V ICB =1 0µA VCE(sat) = 0.4 V iil256at_11 1000 100 .01 .001 VBE - Base Emitter Voltage - V IB - Base Current -µA iil256at_12 -20 0 20 40 60 80 100 105 104 103 102 101 100 10-1 10-2 TA - Ambient Temperature - °C ICEO - Collector-Emitter - nA Typical VCE =1 0V

Rev. 1.4, 22-Apr-04 Vishay Semiconductors www.vishay.com Package Dimensions in Inches (mm) .036 (.91) .014 (.36) .260 (6.6) R .010 (.13) .050 (1.27) i178020 ISO Method A 40° .240 (6.10) .050(1.27) Typ. .016 (.41) .004 (.10) .008 (.20) Lead coplanarity ±.001 Max. .008 (.20) .120±.002 (3.05±.05) CL R.010 5° Max. Pin One I.D. .154±.002 (3.91±.05) .015±.002 (.38±.05).230±.002 (5.84±.05) .020±.004 (.51±.10) 2 Plcs. .0585±.002 (1.49±.05) .125±.002 (3.18±.05)

www.vishay.com Document Number 83620 Rev. 1.4, 22-Apr-04 VISHA YIL256AT Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423