IL255 VISHAY | Alldatasheet

Document overview

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Technical content

Features

  • AC or Polarity Insensitive Inputs  Continuous Forward Current, 130 mA  Built-in Reverse Polarity Input Protection  Improved CTR Symmetry  Industry Standard DIP Package  Lead-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals  UL1577, File No. E52744 System Code H or J, Double Protection  DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1  BSI IEC60950 IEC60065

Applications

Description

The IL255 is a bidirectional input optically coupled isolator consisting of two high current GaAs infrared LEDs coupled to a silicon NPN phototransistor. The IL255 has a minimum CTR of 20 % This optocoupler is ideal for applications requiring AC signal detection and monitoring. Order Information For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause pe rmanent damage to the device. Func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Part Remarks IL255 CTR > 20 %, DIP-6 IL255-1 CTR 20 - 80 %, DIP-6 IL255-2 CTR > 50 %, DIP-6 IL255-X007 CTR > 20 %, SMD-6 (option 7) IL255-X009 CTR > 20 %, SMD-6 (option 9) Parameter Test condition Symbol Value Unit Peak pulsed current 1.0 µs, 300 pps I FP 3.0 A Forward continuous current I F 130 mA Power dissipation P diss 175 mW Derate linearly from 25 °C 2.3 mW/°C

www.vishay.com Document Number 83619 Rev. 1.6, 26-Oct-04 IL255 Vishay Semiconductors Output Coupler

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BVCEO 30 V Emitter-base breakdown voltage BVEBO 5.0 V Collector-base breakdown voltage BVCBO 70 V Power dissipation P diss 200 mW Derate linearly from 25°C 2.6 mW/°C Parameter Test condition Symbol Value Unit Isolation test voltage ( between emitter and detector, refer to standard climate 23 °C/50 %RH, DIN 50014) VISO 5300 V RMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation resistance V IO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Total dissipation P tot 250 mW Derate linearly from 25 °C 3.3 mW/°C Storage temperature T stg - 55 to + 150 °C Operating temperature T amb - 55 to + 100 °C Lead soldering time at ≤ 260 °C 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = ± 100 mA V F 1.4 1.7 V Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage I C = 10 mA BV CEO 30 50 V Emitter-collector breakdown voltage I E = 10 µAB V ECO 7.0 10 V Collector-base breakdown voltage I C = 100 µAB V CBO 70 V Emitter-base breakdown voltage I E = 100 µAB V EBO 7.0 V Collector-emitter leakage current V CE = 10 V I CEO 5.0 50 nA

Rev. 1.6, 26-Oct-04 Vishay Semiconductors www.vishay.com Package Dimensions in Inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) Min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one ID 654 123 18° 3°–9° .300–.347 (7.62–8.81) typ. ISO Method A .315 (8.0) MIN. .300 (7.62) TYP. .180 (4.6) .160 (4.1) .331 (8.4) MIN. .406 (10.3) MAX. .028 (0.7) MIN. Option 7 18494 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15° max. Option 9

www.vishay.com Document Number 83619 Rev. 1.6, 26-Oct-04 IL255 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423