IL217AT

IL215AT VISHAY | Alldatasheet

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Optocoupler, Phototransistor Output, Low Input Current, with Base Connection www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83616 324 Rev. 1.9, 08-May-08 IL215AT/216AT/217AT Vishay Semiconductors

DESCRIPTION

The IL215AT/IL216AT/IL217AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL215AT/IL216AT/IL217AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through hole requirements, this package conforms to standards for surface mounted devices. The high CTR at low input current is designed for low power consumption requirements such as CMOS microprocessor interfaces.

FEATURES

• High current transfer ratio  Isolation test voltage, 4000 V RMS  Industry standard SOIC-8 surface mountable package  Compatible with dual wave, vapor phase and IR reflow soldering  Lead (Pb)-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS  UL1577, file no. E52744 system code Y  CUL - file no. E52744, equivalent to CSA bulletin 5A  DIN EN 60747-5-5 available with option 1 i179002 A K NC NC NC B C E ORDER INFORMATION PART REMARKS IL215AT CTR > 20 %, SOIC-8 IL216AT CTR > 50 %, SOIC-8 IL217AT CTR > 100 %, SOIC-8 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Peak reverse voltage V R 6.0 V Forward continuous current I F 60 mA Power dissipation P diss 90 mW Derate linearly from 25 °C 1.2 mW/°C OUTPUT Collector emitter breakdown voltage BV CEO 30 V Emitter collector breakdown voltage BV ECO 7.0 V Collector base breakdown voltage BV CBO 70 V ICMAX DC ICMAX DC 50 mA ICMAX t < 1.0 ms I CMAX 100 mA Power dissipation P diss 150 mW Derate linearly from 25 °C 2.0 mW/°C

Document Number: 83616 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.9, 08-May-08 325 IL215AT/216AT/217AT Optocoupler, Phototransistor Output, Low Input Current, with Base Connection Vishay Semiconductors Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requier ements. Typical values are characteristic s of the device and are the result of en gineering evaluations. Typical values are for information only and are not part of the testing requirements. COUPLER Isolation test voltage 1 s V ISO 4000 V RMS Total package dissipation LED and detector P tot 240 mW Derate linearly from 25 °C 3.2 mW/°C Storage temperature T stg - 55 to + 150 °C Operating temperature T amb - 55 to + 100 °C Soldering time at 260 °C 10 s ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 1.0 mA V F 1.0 1.5 V Reverse current V R = 6 V I R 0.1 100 µA Capacitance V R = 0 V C O 13 pF OUTPUT Collector emitter breakdown voltage I C = 10 µA BV CEO 30 V Emitter collector breakdown voltage I E = 10 µA BV ECO 7.0 V Dark current collector emitter V CE = 10 V, IF = 0 A I CEO 5.0 50 nA Collector emitter capacitance V CE = 0 C CE 10 pF COUPLER Saturation voltage, collector emitter I F =1.0 mA, IC = 0.1 mA V CEsat 0.4 V Capacitance (input to output) C IO 0.5 pF Resistance input to output R IO 100 G Ω CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT DC current transfer ratio I F = 1.0 mA, VCE = 5.0 V IL215AT CTR DC 20 50 % IL216AT CTR DC 50 80 % IL217AT CTR DC 100 130 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Switching time IF = 2.0 mA, RL = 100 Ω, VCC = 10 V ton, toff 3.0 µs ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83616 326 Rev. 1.9, 08-May-08 IL215AT/216AT/217AT Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, with Base Connection Note safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 1 - Forward Voltage vs. Forward Current Fig. 2 - Normalized Non-Saturated and Saturated CTRCE vs. LED Current Fig. 3 - Collector Emitter Current vs. LED Current Fig. 4 - Normalized Collector Base Photocurrent vs. LED Current SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification (according to IEC 68 part 1) 55/100/21 Comparative tracking index CTI 175 399 VIOTM 6000 V VIORM 560 V PSO 350 mW ISI 150 mA TSI 165 °C Creepage 4m m Clearance 4m m Insulation thickness, reinforced rated per IEC 60950 2.10.5.1 0.2 mm iil215at_01 1001010.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 IF - Forward Current (mA) VF - Forward Voltage (V) TA = - 55 °C TA = 100 °C TA = 25 °C iil215at_02 0.1 1 10 10 0.0 0.5 1.0 1.5 NCTRCE - Normalized CTRCE VCE =5 V Normalized to: VCE = 10 V IF = 10 mA VCE = 0.4 V IF - LED Current (mA) iil215at_03 0.1 1 10 100 100 150 VCE = 0.4 V VCE = 5 V IF - LED Current (mA) ICE - Collector Emitter Current (mA) iil215at_04 0.1 1 10 100 0.1 100 Nlcb - Normalized Icb IF - LED Current (mA) Normalized to: Vcb = 9.3 V IF = 1.0 mA

Document Number: 83616 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.9, 08-May-08 327 IL215AT/216AT/217AT Optocoupler, Phototransistor Output, Low Input Current, with Base Connection Vishay Semiconductors Fig. 5 - Collector Base Photocurrent vs. LED Current Fig. 6 - Collector Emitter Leakage Current vs.Temperature Fig. 7 - Normalized Saturated hFE vs. Base Current and Temperature Fig. 8 - Normalized Non-Saturated and Saturated CTRCE vs. LED Current Fig. 9 - Normalized Non-Saturated and Saturated Collector Emitter Current vs. LED Current Fig. 10 - Normalized Collector Base Photocurrent vs. LED Current iil215at_05 0.1 1 10 100 0.1 100 1000 Icb - Collector Base Current (µA) Vcb = 9.3 V IF - LED Current (mA) iil215at_06 100806040200- 20 TA - Ambient Temperature (°C) Iceo - Collector Emitter (nA) TYPICAL Vce = 10 V 10 5 - 1 - 2 iil215at_07 10 100 1000 0.0 0.5 1.0 1.5 2.0 25 °C 50 °C 70 °C Ib - Base Current (µA) NhFE(sat) - Normalized Saturated hFE Normalized to: Ib = 20 µA Vce = 10 V Vce = 0.4 V iil215at_08 10 100 0.0 0.5 1.0 1.5 2.0 Vce = 0.4 V Vce = 5 V IF - LED Current (mA) NCTRce - Normalzed CTRce Normalized to: Vce= 5 V IF = 1 mA 10.1 iil215at_09 10 100 0.01 0.1 10 0 Vce = 5 V Vce = 0.4 V I F - LED Current (mA) NIce - Normalized Ice Normalized to: Vce = 5 V IF = 1 mA 0.1 1 iil215at_10 0.01 0.1 1 10 100 1000 0.01 0.1 100 IF - LED Current (mA) NIcb - Normalized Icb Normalized to: Vce =5 V IF =1m A

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83616 328 Rev. 1.9, 08-May-08 IL215AT/216AT/217AT Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, with Base Connection Fig. 11 - Collector Base Photocurrent vs. LED Current Fig. 12 - High to Low Propagation Delay vs. LED Current and Load Resistor Fig. 13 - Low to High Propagation Delay vs. LED Current and Load Resistor Fig. 14 - Normalized Non-Saturated hFE vs. Base Current and Temperature Fig. 15 - Typical Switching Characteristics vs. Base Resistance (Saturated Operation) Fig. 16 - Typical Switching Times vs. Load Resistance iil215at_11 0.01 0.1 1 10 100 1000 0.1 100 1000 IF - LED Current (mA) Icb - Collector Base photocurrent (µA) Vcb = 9.3 V iil215at_12 10 15 20 10 kΩ IF - LED Current (mA) tpHL - High Low Propagation Delay (µs) 2 kΩ 4.7 kΩ Vcc = 5 V Vth = 1.5 V 0 5 iil215at_13 10 15 20 10 kΩ 4.7 kΩ 2 kΩ tpLH - Low High Propagation Delay (µs) Vcc = 5 V,Vth = 1.5 V 0 5 iil215at_14 1000 0.4 0.6 0.8 1.0 1.2 Ib - Base Current (µA) NhFE - Normalized hFE - 20 °C 25 °C 50 °C 70 °C Normalized to: Ib = 20 µA Vce = 10 V 10 1001 iil215at_15 100 1.0 Input: = 10 mA Pulse width = 100 mS Duty cycle = 50 % Base Emitter Resistance, RBE (W) TOFF TON Switching Time (µs) 10K 50K 100K 500K 1M IF iil215at_16 1000 500 100 0.1 0.5 1 10 50 100 Input: IF = 10 mA Pulse with = 100 mS Duty cycle = 50 % TOFF TON Load Resistance RL (kΩ) Switching Time (µs)

Document Number: 83616 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.9, 08-May-08 329 IL215AT/216AT/217AT Optocoupler, Phototransistor Output, Low Input Current, with Base Connection Vishay Semiconductors Fig. 17 Switching Test Circuit PACKAGE DIMENSIONS in inches (millimeters) iil215at_17 VCC = 5 V Input V OUT R L toff tr 10 % 50 % 90 % ts tpdofftpdon ton trtdOutput Input 10 % 50 % 90 % i178003 40° Pin one ID 5° max. ISO method A 0.036 (0.91) 0.014 (0.36) 0.170 (4.32) 0.045 (1.14) 0.260 (6.6) R 0.010 (0.13) 0.050 (1.27)0.240 (6.10) 0.050 (1.27) typ. 0.016 (0.41) 0.004 (0.10) 0.008 (0.20) Lead coplanarity 0.008 (0.20) 0.120 ± 0.005 (3.05 ± 0.13) CL R 0.010 (0.25) max. 0.021 (0.53) 0.154 ± 0.005 (3.91 ± 0.13) 0.015 ± 0.002 (0.38 ± 0.05) 0.192 ± 0.005 (4.88 ± 0.13) 0.020 ± 0.004 (0.51 ± 0.10) 2 places 0.058 ± 0.005 (1.49 ± 0.13) 0.125 ± 0.005 (3.18 ± 0.13)

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83616 330 Rev. 1.9, 08-May-08 IL215AT/216AT/217AT Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, with Base Connection OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.