IL211AT_10 VISHAY | Alldatasheet

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IL211AT, IL212AT, IL213AT www.vishay.com Vishay Semiconductors Rev. 1.9, 21-Dec-10 1 Document Number: 83615 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package

DESCRIPTION

The IL211AT, IL212AT, IL213AT are optically coupled pairs with a gallium arsenide infrared LED and silicon NPN phototransistor. Signal informa tion, including a DC level, can be transmitted by the devi ce while maintaining a high degree of electrical isolation between input and output. The IL211AT, IL212AT, IL213AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for hi gh density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A c h o i c e o f 2 0 % , 5 0 % , and 100 % minimum CTR at I F = 10 mA makes these optocouplers suitable for a variety of different applications.

FEATURES

  • Isolation test voltage, 4000 VRMS
  • Industry standard SOIC-8 surface mountable package
  • Compatible with dual wave, vapor phase and IR reflow soldering
  • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS
  • UL1577, file no. E52744 system code Y
  • cUL - file no. E52744, equivalent to CSA bulletin 5A
  • DIN EN 60747-5-2 (VDE 0884) (1)
  • DIN EN 60747-5-5 (pending) (1) Note (1) Available upon request, as option 1 i179002-1 A K NC NC NC B C E VDE i179025

ORDERING INFORMATION

IL 21# A T PART NUMBER AGENCY CERTIFIED/PACKAGE CTR (%) 10 mA UL, cUL > 20 > 50 > 100 SOIC-8 IL211AT IL212AT IL213AT ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Peak reverse voltage V R 6V Forward continuous current I F 60 mA Power dissipation P diss 90 mW Derate linearly from 25 °C 1.2 mW/°C OUTPUT Collector emitter breakdown voltage BV CEO 30 V Emitter collector breakdown voltage BV ECO 7V Collector base breakdown voltage V CBO 70 V ICMAX. DC ICMAX. DC 50 mA ICMAX. t < 1 ms I CMAX. 100 mA Power dissipation P diss 150 mW Derate linearly from 25 °C 2m W / ° C SOIC-8 6.1 mm

IL211AT, IL212AT, IL213AT www.vishay.com Vishay Semiconductors Rev. 1.9, 21-Dec-10 2 Document Number: 83615 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note

  • Stresses in excess of the absolu te maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those give n in the operational sections of this document. Exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. Note
  • Minimum and maximum values were tested requirements. Typical va lues are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. COUPLER Isolation test voltage V ISO 4000 V RMS Total package dissipation LED and detector P tot 240 mW Derate linearly from 25 °C 3.2 mW/°C Storage temperature T stg -55 to +150 °C Operating temperature T amb -55 to +100 °C Soldering time at 260 °C 10 s ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 10 mA V F -1 . 3 1 . 5V Reverse current V R = 6 V I R - 0.1 100 μA Capacitance V R = 0 V C O -1 3-p F OUTPUT Collector emitter breakdown voltage I C = 10 μA BV CEO 30 - - V Emitter collector breakdown voltage I E = 10 μA BV ECO 7--V Collector dark current V CE = 10 V I CEO - 5 50 nA Collector emitter capacitance V CE = 0 V C CE -1 0 p F COUPLER Saturation voltage, collector emitter I F = 10 mA V CEsat -- 0 . 4 V Isolation test voltage 1 s V ISO 4000 - - V RMS Capacitance (input to output) C IO -0 . 5 5 0 p F Resistance (input to output) R IO -1 0 0-G Ω Collector emitter breakdown voltage I C = 10 μA BV CEO 30 - - V CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Current transfer ratio I F = 10 mA, VCE = 5 V IL211AT CTR 20 50 - % IL212AT CTR 50 80 - % IL213AT CTR 100 130 - % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Switching time IC = 2 mA, RL = 100 Ω, VCC = 10 V ton, toff -3- μ s ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT

IL211AT, IL212AT, IL213AT www.vishay.com Vishay Semiconductors Rev. 1.9, 21-Dec-10 3 Document Number: 83615 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Forward Voltage vs. Forward Current Fig. 2 - Collector Current vs. Collector Emitter Voltage (non-saturated) Fig. 3 - Leakage Current vs. Ambient Temperature Fig. 4 - Collector Current vs. Collector Emitter Voltage (saturated) SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification According to IEC 68 part 1 - 55 / 100 / 21 - Comparative tracking index CTI 175 - 399 V IOTM 6000 - - V VIORM 560 - - V PSO - - 350 mW ISI - - 150 mA TSI - - 165 °C Creepage distance 4 - - mm Clearance distance 4 - - mm Insulation thickness 0.2 - - mm VF - Forward Voltage (V) IF - Forward Current (mA)22462 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 Tamb = 0 °C Tamb = 25 °C Tamb = 50 °C Tamb = 75 °C Tamb = 100 °C Tamb = - 40 °C Tamb = - 55 °C 22463 IC - Collector Current (mA) VCE - Collector Emitter Voltage (NS) (V) 012345678 IF = 30 mA IF = 20 mA IF = 15 mA IF = 10 mA IF = 5 mA

22466 ICE0 - Leakage Current (nA)

Tamb - Ambient Temperature (°C) 0.001 0.01 0.1 100 1000 10 000 - 60 - 40 - 20 0 20 40 60 80 100 IF = 0 mA VCE = 40 V VCE = 12 V VCE = 24 V 22464 IC - Collector Current (mA) VCE - Collector Emitter Voltage (sat) (V) 0 0.1 0.2 0.3 0.4 IF = 25 mA IF = 10 mA IF = 5 mA IF = 2 mAIF = 1 mA

IL211AT, IL212AT, IL213AT www.vishay.com Vishay Semiconductors Rev. 1.9, 21-Dec-10 4 Document Number: 83615 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Normalized CTR (non-saturated) vs. Ambient Temperature Fig. 6 - Normalized CTR (saturated) vs. Ambient Temperature Fig. 7 - Normalized CTR (non-saturated) vs. Forward Current Fig. 8 - Normalized CTR (saturated) vs. Forward Current Fig. 9 - Normalized Photocurrent vs. LED Current Fig. 10 - Normalized Saturated HFE vs. Base Current

22490 NCTR - Normalized CTR (NS)

Tamb - Ambient Temperature (°C) 0.2 0.4 0.6 0.8 1.0 1.2 - 60 - 40 - 20 0 20 40 60 80 100 VCE = 5 VIF = 10 mA IF = 5 mA IF = 1 mA

22489 NCTR - Normalized CTR (sat)

Tamb - Ambient Temperature (°C) - 60 - 40 - 20 0 20 40 60 80 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VCE = 0.4 V IF = 10 mA IF = 5 mA IF = 1 mA

22485 NCTR - Normalized CTR (NS)

IF - Forward Current (mA) 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 Tamb = - 40 °C Tamb = 0 °C Tamb = 50 °C Tamb = 75 °C Tamb = 100 °C VCE = 5 V Tamb = 25 °C Tamb = - 55 °C

22486 NCTR - Normalized CTR (sat)

IF - Forward Current (mA) 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tamb = - 40 °C Tamb = 0 °C Tamb = 50 °C Tamb = 75 °C Tamb = 100 °C VCE = 0.4 V Tamb = 25 °C Tamb = - 55 °C

22487 NIBP - Normalized (IBP)

IF - LED Current (mA) 0.01 0.1 0.1 1 10 100 Tamb = - 40 °C Tamb = 0 °C Tamb = 50 °C Tamb = 75 °C Tamb = 100 °C VCE = 5 V Tamb = 25 °CTamb = - 55 °C

22488 NHFE (sat) - Normalized Saturated HFE

IB - Base Current (μA) 0.4 0.8 1.2 1.6 2.0 1 10 100 VCE = 0.4 V Tamb = 100 °C Tamb = 75 °C Tamb = 50 °C Tamb = - 55 °C Tamb = - 40 °C Tamb = 0 °C Tamb = 25 °C

IL211AT, IL212AT, IL213AT www.vishay.com Vishay Semiconductors Rev. 1.9, 21-Dec-10 5 Document Number: 83615 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 11 - FCTR vs. Phase Angle Fig. 12 - FCTR vs. IC Fig. 13 - Switching Time vs. Load Resistance Fig. 14 - Switching Time vs. Base Emitter Resistance

22470 Phase (deg)

f (kHz) - 160 - 140 - 120 - 100 - 80 - 60 - 40 - 20 1 10 100 1000 VCE = 5 V

22471 FCTR (kHz)

IC - Collector Current (mA) 0.1 1 10 100 100 1000 VCC = 5 V 22491 ton, toff - Switching Time (μs) RL - Load Resistance (kΩ) 0.1 100 1000 0.1 1 10 100 ton toff VCE = 5 V, IF = 10 mA Pulse width = 100 ms f = 1 kHz 22492 ton, toff - Switching Time (μs) RBE - Base Emitter Resistance (kΩ) 100 10 100 1000 10 000 ton toff VCE = 5 V, IF = 10 mA Pulse width = 100 μs f = 1 kHz, RL = 2.2 kΩ

IL211AT, IL212AT, IL213AT www.vishay.com Vishay Semiconductors Rev. 1.9, 21-Dec-10 6 Document Number: 83615 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters PACKAGE MARKING (example) i178003 40° Pin one ID 5° max. ISO method A 0.91 0.36 4.32 1.14 6.6 R 0.13 1.276.10 1.27 typ. 0.41 0.1

0.2 Lead coplanarity

± 0.04 max. 0.20 3.05 ± 0.13 CL R 0.25 max. 0.53 3.91 ± 0.13 0.38 ± 0.05 4.88 ± 0.13 0.51 ± 0.10 2 places 1.49 ± 0.13 3.18 ± 0.13 21764-102 213A V YWW Y 68

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