IL211AT VISHAY | Alldatasheet

Document overview

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Technical content

Features

  • Isolation Voltage, 3000 V RMS  Industry Standard SOIC-8A Surface Mountable Package  Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering  Lead-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals  UL1577, File No. E52744 System Code Y  DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1

Description

The IL211AT/ IL212AT/ IL213AT are optically cou- pled pairs with a Gallium Ar senide infrared LED and silicon NPN phototransistor . Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL211AT/ IL212AT/ IL213AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A choice of 20, 50, and 100 % minimum CTR at I F = 10 mA makes these optocouplers suitable for a variety of different applications. Order Information Available only on Tape and Reel Option (Conforms to EIA Standard RS481A) For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause pe rmanent damage to the device. Func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Part Remarks IL211AT CTR > 20 %, SOIC-8 IL212AT CTR > 50 %, SOIC-8 IL213AT CTR > 100 %, SOIC-8 Parameter Test condition Symbol Value Unit Peak reverse voltage V R 6.0 V Forward continuous current I F 60 mA Power dissipation P diss 90 mW Derate linearly from 25 ° 1.2 mW/°C

www.vishay.com Document Number 83615 Rev. 1.5, 26-Oct-04 IL211AT/ 212AT/ 213AT Vishay Semiconductors Output Coupler

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BV CEO 30 V Emitter-collector breakdown voltage BV ECO 7.0 V Collector-base breakdown voltage V CEO 70 V ICMAX DC ICMAX DC 50 mA ICMAX t < 1.0 ms I CMAX 100 mA Power dissipation P diss 150 mW Derate linearly from 25 °C 2.0 mW/°C Parameter Test condition Symbol Value Unit Total package dissipation (LED + Detector) P tot 240 mW Derate linearly from 25 °C 3.2 mW/°C Storage temperature T stg - 55 to +150 °C Operating temperature T amb - 55 to +100 °C Soldering time at 260 °C 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 10 mA V F 1.3 1.5 V Reverse current V R = 6.0 V I R 0.1 100 µA Capacitance V R = 0 C O 13 pF Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 10 µAB V CEO 30 V Emitter-collector breakdown voltage IE = 10 µAB V ECO 7.0 V Collector dark current V CE = 10 V I CEO 5.0 50 nA Collector-emitter capacitance V CE = 0 C CE 10 pF Parameter Test condition Symbol Min Typ. Max Unit Saturation voltage, collector-emitter I F = 10 mA V CEsat 0.4 V Isolation test voltage 1 sec. V ISO 3000 V RMS Capacitance (input-output) C IO 0.5 50 pF Resistance input to output R IO 100 G Ω Collector-emitter breakdown voltage I C = 10 µAB V CEO 30 V

Figure 11. Switching Test Circuit

www.vishay.com Document Number 83615 Rev. 1.5, 26-Oct-04 IL211AT/ 212AT/ 213AT Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423