IL1205AT VISHAY | Alldatasheet

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Document Number: 83549 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.7, 08-May-08 301 Optocoupler, Phototransistor Output, with Base Connection in IL1205AT/1206AT/1207AT/1208AT Vishay Semiconductors

DESCRIPTION

The 110 °C IL1205AT/1206AT/1207AT/1208AT are optically coupled pairs with a gallium arsenide infrared LED and a silicon NPN phototransistor. Si gnal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. This family comes in a standard SOIC-8 small outline package for surface mounting which makes them ideally suited for high density applic ation with limit ed space. In addition to eliminating through-hole requirements, this package conforms to stan dards for surface mounted devices. A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BV CEO of 70 V gives a higher safety margin compared to the industry standard 30 V.

FEATURES

 Operating temperature from - 55 °C to + 110 °C  High BV CEO, 70 V  Isolation test voltage, 4000 V RMS  Industry standard SOIC-8 surface mountable package  Compatible with dual wave, vapor phase and IR reflow soldering  Lead (Pb)-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

 AC adapters P L C s  Switch mode power supplies  DC/DC converters  Microprocessor I/O interfaces  General impedance matching circuits AGENCY APPROVALS  UL1577 - file no. E52744 system code Y  CUL - file no. E52744, equivalent to CSA bulletin 5A  DIN EN 60747-5-5 available with option 1 i179002 A K NC NC NC B C E ORDER INFORMATION PART REMARKS IL1205AT CTR 40 to 80 %, SOIC-8 IL1206AT CTR 63 to 125 %, SOIC-8 IL1207AT CTR 100 to 200 %, SOIC-8 IL1208AT CTR 160 to 320 %, SOIC-8 ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Continuous forward current I F 60 mA Peak reverse voltage V R 6.0 V Power dissipation Pdiss 90 mW Derate linearly from 25 °C 0.9 mW/°C OUTPUT Collector emitter voltage V CE 70 V Collector current IC 50 mA t < 1.0 ms I C 100 mA Power dissipation Pdiss 150 mW Derate linearly from 25 °C 1.5 mW/°C

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83549 302 Rev. 1.7, 08-May-08 IL1205AT/1206AT/1207AT/1208AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package, 110 °C Rated Notes (1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause per manent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SOP/SOIC). Fig. 1 - Input Power Dissipation (LED) vs. Ambient Temperature Fig. 2 - Output Power Dissipation vs. Ambient Temperature Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical val ues are characteristic s of the device and are the result of en gineering evaluations. Typical values are for information only and are not part of the testing requirements. COUPLER Isolation test voltage V ISO 4000 V RMS Operating temperature T amb - 55 to + 110 °C Total package dissipation (LED and detector) P tot 240 mW Storage temperature T stg - 55 to + 150 °C Soldering temperature (2) max. 10 s, dip soldering distance to seating plane ≥ 1.5 mm Tsld 260 °C Derate linearly from 25 °C 2.4 mW/°C ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT 01 0 2 03 04 05 06 07 0 80 90 100 110 120 100 Tamb (°C) LED Power Pdiss (mW) 0 10 20 30 40 50 60 70 80 90 100 110 120 100 Tamb (°C) Output Power Pdiss (mW) 110 120 130 140 150 160 ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 10 mA V F 1.3 1.5 V Reverse current V R = 6 V I R 0.1 100 µA Capacitance V R = 0 V C I 13 pF OUTPUT Collector emitter leakage current V CE = 10 V I CEO 5.0 50 nA Collector emitter breakdown voltage I C = 100 µA BV CEO 70 V Emitter collector breakdown voltage I E = 100 µA BV ECO 7.0 10 V Collector base breakdown current BV CBO 70 V Saturation voltage, collector emitter I C = 2 mA, IF = 10 mA V CEsat 0.4 V COUPLER DC current transfer ratio IF = 10 mA, VCE = 5.0 V IL1205AT CTR 40 80 % IL1206AT CTR 63 125 % IL1207AT CTR 100 200 % IL1208AT CTR 100 320 % I F = 1.0 mA, VCE = 5.0 V IL1205AT CTR 13 25 % IL1206AT CTR 22 40 % IL1207AT CTR 34 60 % IL1208AT CTR 56 95 % Capacitance (input to output) C IO 0.5 pF

Document Number: 83549 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.7, 08-May-08 303 IL1205AT/1206AT/1207AT/1208AT Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package, 110 °C Rated Vishay Semiconductors Fig. 3 Switching Test Circuit Note safety ratings shall be ensured by means of protective circuits. SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Turn-on time IC = 2 mA, RL = 100 Ω, VCC = 10 V ton 3.0 µs Turn-off time IC = 2 mA, RL = 100 Ω, VCC = 10 V toff 3.0 µs i205at_11 VOUT VCC = 5 V RL Input toff tr 10 % 50 % 90 % ts tpdofftpdon ton trtdOutput Input 10 % 50 % 90 % SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification (according to IEC 68 part 1) 55/110/21 Pollution degree (DIN VDE 0109) 2.0 Comparative tracking index per DIN IEC 112/VDE 0303 part 1, group IIIa per DIN VDE 6110 175 399 CTI 175 399 V IOTM VIOTM 6000 V VIORM VIORM 560 V Resistance (input to output) R IO 1012 Ω PSI 350 mW ISI 150 mA TSI 165 °C Creepage distance 4.0 mm Clearance distance 4.0 mm

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83549 304 Rev. 1.7, 08-May-08 IL1205AT/1206AT/1207AT/1208AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package, 110 °C Rated TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 4 - Diode Forward Voltage VF vs. Forward Current Fig. 5 - IC (Unsaturated) vs. VCE Fig. 6 - Collector to Emitter Current vs. Ambient Temperature Fig. 7 - IC (Saturated) vs. VCE Fig. 8 - CTR Normalized to IF = 10 mA vs. Ambient Temperature, (Saturated, VCE = 0.4 V) Fig. 9 - CTR Normalized to IF = 10 mA vs. Ambient Temperature, (Non-Saturated, VCE = 5 V) 0.1 1.0 10.0 100.0 IF (mA) 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Forward Voltage VF (V) - 55 °C 0 °C + 25 °C + 50 °C + 110 °C 01234567 8 91 0 VCE (V) Collector Current (mA) IF = 5 mA IF = 10 mA IF = 15 mA IF = 20 mA IF = 30 mA 0.00001 0.0001 0.001 0.01 0.1 100 1000 10000 100000 Collector to Emitter Leakage Current ICE0 (nA) 40 V 24 V 12 V - 55 - 40 - 25 - 10 20 35 50 65 80 95 110 125 Tamb (°C) VCE (V) Collector Current (mA) IF = 1 mA IF = 2 mA IF = 5 mA IF = 10 mA IF = 25 mA 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 - 55 - 40 - 25 - 10 20 35 50 65 80 95 110 125 Tamb (°C) Normalized CTR Normalized to I = 10 mA Tamb = 25 °C F I F = 5 mA I F = 10 mA I F = 1 mA 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Normalized CTR - 55 - 40 - 25 - 10 20 35 50 65 80 95 110 125 Tamb (°C) Normalized to I = 10 mA Tamb = 25 °C F IF = 1 mA IF = 5 mA IF = 10 mA

Document Number: 83549 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.7, 08-May-08 305 IL1205AT/1206AT/1207AT/1208AT Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package, 110 °C Rated Vishay Semiconductors Fig. 10 - CTR vs. IF, (VCE = 5 V, Tamb = 25 °C) (Not Normalised) Fig. 11 - CTR vs. IF, (VCE = 5 V, Tamb = 25 °C) Normalised to IF = 10 mA, Tamb = 25 °C Fig. 12 - CTR vs. IF Saturated, (VCE = 0.4 V, Tamb = 25 °C) Fig. 13 - CTR vs. IF Saturated, Normalised to IF = 10 mA, Tamb = 25 °C Fig. 14 - Normalized hFE vs. Base Current and Tamb (Non-Saturated Condition) Fig. 15 - Normalized hFE vs. Base Current and Tamb (Saturated Condition) 100 150 200 250 300 0.1 1.0 10.0 IF (mA) CTR (%) IL1208 IL1207 IL1206 IL1205 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1.0 10.0 100.0 IF (mA) CTR IL1208 IL1207 IL1206 IL1205 100 150 200 250 0.1 1.0 10.0 100.0 IF (mA) CTR (%) IL1208 IL1207 IL1206 IL1205 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.0 10.0 100.0 IF (mA) CTR IL1208 IL1207 IL1206 IL1205 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.01 0.1 1 10 100 Base Current (µA) Normalized hFE + 25 °C 0 °C + 50 °C + 110 °C - 55 °C VCE = 5 V 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.01 0.1 1 10 100 Base Current (µA) Normalized hFE + 110 °C + 50 °C 0 °C + 25 °C - 55 °C VCE = 0.4 V

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83549 306 Rev. 1.7, 08-May-08 IL1205AT/1206AT/1207AT/1208AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package, 110 °C Rated Fig. 16 - Collector Base Photocurrent vs. IF Fig. 17 - Cut-Off-Frequency (- 3 dB) vs. Collector Current Fig. 18 - Switching Time ton, toff vs. Load Resistance Fig. 19 - Switching Time ton, toff vs. Load Resistance (100 Ω to 5000 Ω) Fig. 20 - Switching Time vs. IF Fig. 21 - Switching Time vs. RBE, IF = 10 mA 0.001 0.01 0.1 100 1000 0.1 1 10 100 IF (mA) Collector-Base-Photocurrent IBCP (µA) - 55 °C 0 °C + 25 °C + 50 °C + 110 °C 100 1000 0.1 1 10 100 Ic (mA) Cut-off-Frequency fctr (kHz) IL1207, IL1208 0 °C + 25 °C + 50 °C VCE = 5 V, Tamb = 25 °C 100 1000 0 1 10 100 Load Resistance (kW) ton, toff (µs) toff ton 100 011 0 Load Resistance (kW) ton, toff (µs) toff ton

19281 IF (mA)

Switching Time (µs) ton toff RBE = 500 k, VCE = 5 V Tamb = + 25 °C 10 100 1000 10000 toff ton RBE (kW) Switching Time (µs)

Document Number: 83549 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.7, 08-May-08 307 IL1205AT/1206AT/1207AT/1208AT Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package, 110 °C Rated Vishay Semiconductors PACKAGE DIMENSIONS in inches (millimeters) i178003 40° Pin one ID 5° max. ISO method A 0.036 (0.91) 0.014 (0.36) 0.170 (4.32) 0.045 (1.14) 0.260 (6.6) R 0.010 (0.13) 0.050 (1.27)0.240 (6.10) 0.050 (1.27) typ. 0.016 (0.41) 0.004 (0.10) 0.008 (0.20) Lead coplanarity 0.008 (0.20) 0.120 ± 0.005 (3.05 ± 0.13) CL R 0.010 (0.25) max. 0.021 (0.53) 0.154 ± 0.005 (3.91 ± 0.13) 0.015 ± 0.002 (0.38 ± 0.05) 0.192 ± 0.005 (4.88 ± 0.13) 0.020 ± 0.004 (0.51 ± 0.10) 2 places 0.058 ± 0.005 (1.49 ± 0.13) 0.125 ± 0.005 (3.18 ± 0.13)

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83549 308 Rev. 1.7, 08-May-08 IL1205AT/1206AT/1207AT/1208AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package, 110 °C Rated OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.