IL2-X009 VISHAY | Alldatasheet

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Technical content

Features

  • Current Transfer Ratio (see order information)  Isolation Test Voltage 5300 V RMS  Lead-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals  UL1577, File No. E52744 System Code H or J, Double Protection  DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1

Description

The IL1/ IL2/ IL5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN pho- totransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The IL1/ IL2/ IL5 are especially designed for driving medium-speed logic and can be used to elim- inate troublesome ground loop and noise problems These couplers can be used also to replace relays and transformers in many digital interface applica- tions such as CRT modulation. Order Information For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause pe rmanent damage to the device. Func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Part Remarks IL1 CTR > 20 %, DIP-6 IL2 CTR > 100 %, DIP-6 IL5 CTR > 50 %, DIP-6 IL1-X006 CTR > 20 %, DIP-6 400 mil (option 6) IL2-X006 CTR > 100 %, DIP-6 400 mil (option 6) IL2-X009 CTR > 100 %, SMD-6 (option 9) IL5-X009 CTR > 50 %, SMD-6 (option 9)Parameter Test condition Symbol Value Unit Reverse voltage V R 6.0 V Forward current I F 60 mA Surge current I FSM 2.5 A Power dissipation P diss 100 mW Derate linearly from 25 °C 1.33 mW/°C

www.vishay.com Document Number 83612 Rev. 1.5, 26-Oct-04 IL1/ IL2/ IL5 Vishay Semiconductors Output Coupler

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Part Symbol Value Unit Collector-emitter breakdown voltage IL1 BV CEO 50 V IL2 BV CEO 70 V IL5 BV CEO 70 V Emitter-base breakdown voltage BV EBO 7.0 V Collector-base breakdown voltage BV CBO 70 V Collector current IC 50 mA t < 1.0 ms I C 400 mA Power dissipation Pdiss 200 mW Derate linearly from 25 °C 2.6 mW/°C Parameter Test condition Symbol Value Unit Package power dissipation P tot 250 mW Derate linearly from 25 °C 3.3 mW/°C Isolation test voltage (between emitter and detector referred to standard climate 23 °/50 %RH, DIN 50014) V ISO 5300 V RMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Isolation resistance V IO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Storage temperature T stg - 40 to + 150 °C Operating temperature T amb - 40 to + 100 °C Junction temperature T j 100 °C Soldering temperature 2.0 mm from case bottom T sld 260 °C Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 60 mA V F 1.25 1.65 V Breakdown voltage I R = 10 µAV BR 6.0 30 V Reverse current V R = 6.0 V I R 0.01 10 µA Capacitance V R = 0 V, f = 1.0 MHz C O 40 pF Thermal resistance junction to lead Rthjl 750 K/W

Rev. 1.5, 26-Oct-04 Vishay Semiconductors www.vishay.com Output Coupler Current Transfer Ratio Switching Non-saturated Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter capacitance V CE = 5.0 V, f = 1.0 MHz C CE 6.8 pF Collector - base capacitance V CB = 5.0 V, f = 1.0 MHz C CB 8.5 pF Emitter - base capacitance V EB = 5.0 V, f = 1.0 MHz C EB 11 pF Collector-emitter leakage current VCE = 10 V I CEO 5.0 50 nA Collector-emitter saturation voltage ICE = 1.0 mA, IB = 20 µAV CESAT 0.25 V Base-emitter voltage V CE = 10 V, IB = 20 µAV BE 0.65 V DC forward current gain V CE = 10 V, IB = 20 µA HFE 200 650 1800 DC forward current gain saturated VCE = 0.4 V, IB = 20 µAH F E sat 120 400 600 Thermal resistance junction to lead Rthjl 500 K/W Parameter Test condition Symbol Min Typ. Max Unit Capacitance (input-output) V I-O = 0 V, f = 1.0 MHz C IO 0.6 pF Insulation resistance V I-O = 500 V R S 1014 Ω Parameter Test condition Part Symbol Min Typ. Max Unit Current Transfer Ratio (collector-emitter saturated) IF = 10 mA, VCE = 0.4 V IL1 CTR CEsat 75 % IL2 CTR CEsat 170 % IL5 CTR CEsat 100 % Current Transfer Ratio (collector-emitter) IF = 10 mA, VCE = 10 V IL1 CTR CE 20 80 300 % IL2 CTR CE 100 200 500 % IL5 CTR CE 50 130 400 % Current Transfer Ratio (collector-base) IF = 10 mA, VCB = 9.3 V IL1 CTR CB 0.25 % IL2 CTR CB 0.25 % IL5 CTR CB 0.25 % Parameter Current Delay Rise time Storage Fall time Propagation H-L Propagation L-H Test condition VCE = 5.0 V, RL = 75 Ω, tP measured at 50 % of output Symbol IF tD tr tS tf tPHL tPLH Unit mA µs µs µs µs µs µs

www.vishay.com Document Number 83612 Rev. 1.5, 26-Oct-04 IL1/ IL2/ IL5 Vishay Semiconductors Package Dimensions in Inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) Min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one ID 654 123 18° 3°–9° .300–.347 (7.62–8.81) typ. ISO Method A .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) Option 6 18493 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15° max. Option 9

Rev. 1.5, 26-Oct-04 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Cl ean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423