IHW30N90R_08 INFINEON | Alldatasheet

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Technical content

Power Semiconductors 1 Rev. 2.2 Nov 08 Reverse Conducting IGBT with monolithic body diode Features:

  • 1.5V typical saturation voltage of IGBT
  • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat)
  • Low EMI
  • Qualified according to JEDEC 1 for target applications
  • Application specific optimisation of inverse diode
  • Pb-free lead plating; RoHS compliant Applications:
  • Microwave Oven
  • Soft Switching Applications for ZCS Type VCE I C VCE(sat),Tj=25°C Tj,max Marking Package IHW30N90R 900V 30A 1.5V 175°C H30R90 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 900 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 90 Turn off safe operating area VCE ≤ 900V, Tj ≤ 175°C - 90 Diode forward current TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpuls 90 A Gate-emitter voltage Transient Gate-emitter voltage (t p < 5 ms) VGE ±20 ±25 V Power dissipation, TC = 25°C Ptot 454 W Operating junction temperature Tj -40...+175 °C Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1 J-STD-020 and JESD-022

G C E PG-TO-247-3

Power Semiconductors 2 Rev. 2.2 Nov 08 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.33 Diode thermal resistance, junction – case RthJCD 0.33 Thermal resistance, junction – ambient RthJA 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =0.5mA 900 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =30A Tj =25 °C Tj =150 °C Tj =175 °C 1.5 1.6 1.7 1.7 Diode forward voltage V F VGE =0V, IF =30A Tj =25 °C Tj =150 °C Tj =175 °C 1.4 1.4 1.45 1.6 Gate-emitter threshold voltage VGE(th) IC =700 μA, VCE =VGE 5.1 5.8 6.4 V Zero gate voltage collector current ICES VCE =900V , VGE =0V Tj =25 °C Tj =150 °C 2500 μA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 600 nA

Power Semiconductors 3 Rev. 2.2 Nov 08 Dynamic Characteristic Input capacitance Ciss - 2889 - Output capacitance Coss - 83 - Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 79 - pF Gate charge QGate VCC =720V, IC =30A VGE =15V - 200 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13 - nH Switching Characteristic, Inductive Load, at T j=25 °C Value Parameter Symbol Conditions min. Typ. Max. Unit IGBT Characteristic Turn-off delay time td(off) - 511 - Fall time tf - 24 - Turn-on energy Eon - - - Turn-off energy Eoff - 1.46 - Total switching energy Ets Tj =25 °C VCC =600V, IC =30A, VGE =0/15V, RG = 15 Ω - 1.46 - mJ Switching Characteristic, Inductive Load, at Tj=175 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-off delay time td(off) - 594 - Fall time tf - 46 - Turn-on energy Eon - - - Turn-off energy Eoff - 2.1 - Total switching energy Ets Tj =175 °C VCC =600V, IC =30A, VGE =0/15V, RG = 15 Ω - 2.1 - mJ

Power Semiconductors 10 Rev. 2.2 Nov 08 5.44 0.55 6.04 5.49 1.68 3.68 4.17 20.82 16.25 15.70 1.05 3.50 19.80 13.10 MIN 1.90 4.90 2.27 1.07 1.85 1.90 0.238 0.216 0.066 0.145 0.164 0.075 0.820 0.640 0.618 0.022 0.193 0.089 0.042 0.073 0.041 0.075 0.138 0.780 0.516 0.68 6.30 6.00 17.65 2.60 5.10 14.15 3.70 21.10 16.03 20.31 1.35 4.47 2.41 5.16 2.53 1.33 2.11 MAX 2.16 0.027 0.214 0.248 0.236 0.695 0.557 0.102 0.201 0.831 0.631 0.053 0.146 0.799 0.176 MIN MAX 0.095 0.203 0.099 0.052 0.083 0.085 7.5mm 5 5 17-12-2007 Z8B00003327 2.87 2.87 0.113 0.113 3.38 3.13 0.133 0.123 M M PG-TO247-3

Power Semiconductors 11 Rev. 2.2 Nov 08 Figure A. Definition of switching times I rrm 90% I rrm 10% I rrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t trr S F + Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit

Power Semiconductors 12 Rev. 2.2 Nov 08 Published by Infineon Technologies AG

81726 Munich, Germany

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