IHW30N160R2 INFINEON | Alldatasheet

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Power Semiconductors 1 Rev. 2.1 Nov 09 TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features:

  • Powerful monolithic Body Diode with very low forward voltage
  • Body diode clamps negative voltages
  • Trench and Fieldstop technology for 1600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior
  • NPT technology offers easy parallel switching capability due to positive temperature coefficient in V CE(sat)
  • Low EMI
  • Qualified according to JEDEC 1 for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications:
  • Inductive Cooking
  • Soft Switching Applications Type VCE I C VCE(sat),Tj=25°C Tj,max Marking Package IHW30N160R2 1600V 30A 1.8V 175°C H30R1602 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1600 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 90 Turn off safe operating area (VCE ≤ 1600V, Tj ≤ 175°C) - 90 Diode forward current TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpuls 90 Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave IFSM 130 120 A Gate-emitter voltage Transient Gate-emitter voltage (t p < 10 µs, D < 0.01) VGE ±20 ±25 V Power dissipation TC = 25°C Ptot 312 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1 J-STD-020 and JESD-022

G C E PG-TO-247-3

Power Semiconductors 2 Rev. 2.1 Nov 09 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.48 Diode thermal resistance, junction – case RthJCD 0.48 Thermal resistance, junction – ambient RthJA 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =500 µ A 1600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =30A Tj =25 °C Tj =150 °C Tj =175 °C 1.8 2.25 2.35 2.1 Diode forward voltage VF VGE =0V, IF =30A Tj =25 °C Tj =150 °C Tj =175 °C 1.65 2.0 2.0 2.0 Gate-emitter threshold voltage VGE(th) IC =0.75mA, VCE =VGE 5.1 5.8 6.4 V Zero gate voltage collector current ICES VCE =1600V , VGE =0V Tj =25 °C Tj =175 °C 2500 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =30A - 22.5 - S Integrated gate resistor RGint none Ω

Power Semiconductors 3 Rev. 2.1 Nov 09 Dynamic Characteristic Input capacitance Ciss - 2740 - Output capacitance Coss - 68.1 - Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 58.7 - pF Gate charge QGate VCC =1280V, IC =30A; VGE =15V - 94 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13 - nH Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-off delay time td(off) - 525 - Fall time tf - 38.3 - Turn-on energy Eon - - - ns Turn-off energy Eoff - 2.53 - Total switching energy Ets Tj =25 °C, VCC =600V, IC =30A VGE =0 /15V, RG =10 Ω - 2.53 - mJ Switching Characteristic, Inductive Load, at Tj=175 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-off delay time td(off) - 564 - Fall time tf - 111 - Turn-on energy Eon - - - ns Turn-off energy Eoff - 4.37 - Total switching energy Ets Tj =175 °C VCC =600V, IC =30A, VGE = 0 /15V, RG = 10 Ω - 4.37 - mJ

Power Semiconductors 10 Rev. 2.1 Nov 09

Power Semiconductors 11 Rev. 2.1 Nov 09 Figure A. Definition of switching times Figure B. Definition of switching losses I rrm 90% I rrm 10% I rrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t trr S F + Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit

Power Semiconductors 12 Rev. 2.1 Nov 09 Published by Infineon Technologies AG

81726 Munich, Germany

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