IHW30N140R5L INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Infineon Technologies AG
- PDF pages: 14
Technical content
Features
- V CE = 1400 V
- I C = 30 A
- Powerful monolithic body diode with low forward voltage designed for soft commutation only
- Very tight parameter distribution
- High ruggedness, temperature stable behavior
- Very low V CEsat
- Easy paralleling capability due to positive temperature coefficient in VCEsat
- Low EMI
- Qualified according to JESD-022 for target applications
- Pb-free lead plating; RoHS compliant
- Halogen free (according to IEC 61249-2-21)
- Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Potential applications
- Induction cooker
- Microwave ovens Product validation
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Copyright © Infineon Technologies AG 2021. All rights reserved. 6 TO-247 – 3Pin 2021-10-27 restricted
Description
G C E Type Package Marking IHW30N140R5L PG-TO247-3-STD-NN2.5 H30QR5L IHW30N140R5L Reverse-Conducting IGBT Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 www.infineon.com 2023-05-19
Datasheet 2 Revision 1.00 2023-05-19
1 Package
Table 1 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Internal emitter inductance measured 5 mm (0.197 in.) from case LE 13 nH Storage temperature Tstg -55 150 °C Soldering temperature Tsold wave soldering 1.6 mm (0.063 in.) from case for 10 s 260 °C Mounting torque M M3 screw, Maximum of mounting processes: 0.6 Nm Thermal resistance, junction-ambient Rth(j-a) 40 K/W IGBT thermal resistance, junction-case Rth(j-c) 0.49 K/W Diode thermal resistance, junction-case Rth(j-c) 0.49 K/W
2 IGBT
Table 2 Maximum rated values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCE Tvj ≥ 25 °C 1400 V DC collector current, limited by Tvjmax IC limited by bondwire Tc = 25 °C 80 A Tc = 100 °C 58 Pulsed collector current, tp limited by Tvjmax ICpulse 90 A Non repetitive peak collector current1) ICSM 200 A Turn-off safe operating area2) VCE ≤ 1400 V, Tvj ≤ 175 °C 90 A Gate-emitter voltage VGE ±20 V Transient gate-emitter voltage VGE tp ≤ 10 µs, D < 0.01 ±25 V Power dissipation Ptot Tc = 25 °C 306 W Tc = 100 °C 153 1) capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3 µs 2) dV/dt < 1 kV/µs IHW30N140R5L Reverse-Conducting IGBT Datasheet 3 Revision 1.00 2023-05-19
Table 3 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter breakdown voltage VBRCES IC = 0.5 mA, VGE = 0 V 1400 V Collector-emitter saturation voltage VCEsat IC = 30 A, VGE = 15 V Tvj = 25 °C 1.65 1.95 V Tvj = 125 °C 1.85 Tvj = 175 °C 1.9 Gate-emitter threshold voltage VGEth IC = 0.47 mA, VCE = VGE 4 5.6 6.2 V Zero gate-voltage collector current ICES VCE = 1400 V, VGE = 0 V Tvj = 25 °C 100 µA Tvj = 175 °C 700 Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V 100 nA Transconductance gfs IC = 30 A, VCE = 20 V 26.4 S Input capacitance Cies VCE = 25 V, VGE = 0 V, f = 100 kHz 1520 pF Output capacitance Coes VCE = 25 V, VGE = 0 V, f = 100 kHz 45 pF Reverse transfer capacitance Cres VCE = 25 V, VGE = 0 V, f = 100 kHz 37 pF Gate charge QG VCC = 1120 V, IC = 30 A, VGE = 15 V 210 nC Turn-off delay time td(off) VGE = 0/15 V, RG(off) = 10 Ω, Cr = 270 nF, L = 77 µH, R = 2.2 Ω Tvj = 25 °C, IC = 30 A 175 ns Tvj = 175 °C, IC = 30 A 180 Fall time (inductive load) tf VGE = 0/15 V, RG(off) = 10 Ω, Cr = 270 nF, L = 77 µH, R = 2.2 Ω Tvj = 25 °C, IC = 30 A 1120 ns Tvj = 175 °C, IC = 30 A 1980 Soft turn-off energy Eoff VGE = 0/15 V, RG(off) = 10 Ω, Cr = 270 nF, L = 77 µH, R = 2.2 Ω Tvj = 25 °C, IC = 30 A 0.14 mJ Tvj = 175 °C, IC = 30 A 0.37 Operating junction temperature Tvj -40 175 °C IHW30N140R5L Reverse-Conducting IGBT Datasheet 4 Revision 1.00 2023-05-19
3 Diode
Table 4 Maximum rated values Parameter Symbol Note or test condition Values Unit Diode forward current, limited by Tvjmax IF limited by bondwire Tc = 25 °C 80 A Tc = 100 °C 60 Diode pulsed current, tp limited by Tvjmax IFpulse 90 A Table 5 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Diode forward voltage VF IF = 30 A Tvj = 25 °C 1.6 1.95 V Tvj = 125 °C 1.8 Tvj = 175 °C 1.9 Operating junction temperature Tvj -40 175 °C Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Electrical Characteristic, at Tvj = 25°C, unless otherwise specified. Dynamic test circuit, energy losses include “tail” according to Figure B. (Test circuit Figure E). IHW30N140R5L Reverse-Conducting IGBT Datasheet 5 Revision 1.00 2023-05-19
4 Characteristics diagrams
Power dissipation as a function of case temperature Ptot = f(Tc) Tvj ≤ 175 °C Collector current as a function of case temperature IC = f(Tc) Tvj ≤ 175 °C, VGE ≥ 15 V 25 50 75 100 125 150 175 120 160 200 240 280 320 25 50 75 100 125 150 175 Typical output characteristic IC = f(VCE) Tvj = 25 °C Typical output characteristic IC = f(VCE) Tvj = 175 °C 0 1 2 3 4 5 0 1 2 3 4 5 IHW30N140R5L Reverse-Conducting IGBT Datasheet 6 Revision 1.00 2023-05-19
Typical transfer characteristic IC = f(VGE) VCE = 20 V Typical collector-emitter saturation voltage as a function of junction temperature VCEsat = f(Tvj) VGE = 15 V 4 5 6 7 8 9 10 11 12 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-emitter threshold voltage as a function of junction temperature VGEth = f(Tvj) IC = 0.47 mA Typical switching times as a function of collector current t = f(IC) Tvj = 175 °C, VGE = 0/15 V, Cr = 270 nF, RG = 10 Ω 25 50 75 100 125 150 175 0 10 20 30 40 50 60 100 1000 10000 IHW30N140R5L Reverse-Conducting IGBT Datasheet 7 Revision 1.00 2023-05-19
Typical switching times as a function of gate resistor t = f(RG) IC = 30 A, Tvj = 175 °C, VGE = 0/15 V, Cr = 270 nF Typical switching times as a function of junction temperature t = f(Tvj) IC = 30 A, VGE = 0/15 V, Cr = 270 nF, RG = 10 Ω 10 20 30 40 50 100 1000 10000 25 50 75 100 125 150 175 100 1000 10000 Typical switching energy losses as a function of collector current E = f(IC) VGE = 0/15 V, Cr = 270 nF, RG = 10 Ω Typical switching energy losses as a function of gate resistor E = f(RG) IC = 30 A, Tvj = 175 °C, VGE = 0/15 V, Cr = 270 nF 0 10 20 30 40 50 60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 10 20 30 40 50 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 IHW30N140R5L Reverse-Conducting IGBT Datasheet 8 Revision 1.00 2023-05-19
Typical switching energy losses as a function of junction temperature E = f(Tvj) VGE = 0/15 V, Cr = 270 nF, RG = 10 Ω Typical switching energy losses as a function of resonant capacitance E = f(Cr) IC = 30 A, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 100 140 180 220 260 300 340 0.0 0.2 0.4 0.6 0.8 1.0 Typical gate charge VGE = f(QG) IC = 30 A Typical capacitance as a function of collector-emitter voltage C = f(VCE) f = 100 kHz, VGE = 0 V 0 30 60 90 120 150 180 210 0 5 10 15 20 25 30 100 1000 10000 IHW30N140R5L Reverse-Conducting IGBT Datasheet 9 Revision 1.00 2023-05-19
IGBT transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T Diode transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T 1E-6 1E-5 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1E-6 1E-5 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 Typical diode forward current as a function of forward voltage IF = f(VF) Typical diode forward voltage as a function of junction temperature VF = f(Tvj) 0 1 2 3 4 25 50 75 100 125 150 175 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IHW30N140R5L Reverse-Conducting IGBT Datasheet 10 Revision 1.00 2023-05-19
5 Package outlines
DIMENSIONS MIN. MAX. MILLIMETERS PG-TO247-3-U06 PACKAGE - GROUP NUMBER: b D c E e L Q øP A 2.161.85 5.44 20.80 0.55 1.07 15.70 4.10 5.49 3.50 19.80 16.25 1.33 0.68 21.10 6.00 3.70 4.47 20.32 16.13 17.65 4.83 2.27 5.21 2.54 b2 2.87 3.38 D2 0.95 1.35 E1 13.10 14.15 N 3 b1 1.90 2.41 E2 3.68 5.10 E3 1.00 2.60 S 6.04 6.30 PG-TO247-3-STD-NN2.5 Figure 1 IHW30N140R5L Reverse-Conducting IGBT Datasheet 11 Revision 1.00 2023-05-19
6 Testing conditions
t VGE(t) E t t V I toff = x x d CE C Figure A. Figure B. Figure C.Typical switching behavior in resonant applications Figure E. Dynamic test circuit Figure D. I (t)C Resonant capacitor, Damping resistor, R V (t) CE V GE (t) I (t) V (t)CE T esting Conditions CC td(off) tf 2% I C t 90% VGE t t 0% IC 1% I C t 90% VGE t t t I,V VGE I CE V CE C r R Figure 2 IHW30N140R5L Reverse-Conducting IGBT Datasheet 12 Revision 1.00 2023-05-19
Revision history
Document revision Date of release Description of changes 0.10 2022-11-25 Preliminary datasheet 1.00 2023-05-19 Final datasheet IHW30N140R5L Reverse-Conducting IGBT Datasheet 13 Revision 1.00 2023-05-19
All referenced product or service names and trademarks are the property of their respective owners. Edition 2023-05-19 Published by Infineon Technologies AG
81726 Munich, Germany
© 2023 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABC707-002 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.