IHW30N135R3_V01 INFINEON | Alldatasheet

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ReverseconductingIGBTwithmonolithicbodydiode IHW30N135R3 Datasheet IndustrialPowerControl

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.3 www.infineon.com 2019-09-19 IHW30N135R3 ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode Features:

  • Offersnewhigherbreakdownvoltageto1350Vforimproved reliability
  • Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly
  • TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat
  • LowEMI
  • QualifiedaccordingtoJESD-022fortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • Halogenfree(accordingtoIEC61249-2-21)
  • CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications:
  • Inductivecooking
  • Inverterizedmicrowaveovens
  • Resonantconverters
  • Softswitchingapplications Packagepindefinition:
  • Pin1-gate
  • Pin2&backside-collector
  • Pin3-emitter G C E G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IHW30N135R3 1350V 30A 1.65V 175°C H30R1353 PG-TO247-3

Datasheet 3 V2.3 2019-09-19 IHW30N135R3 ResonantSwitchingSeries TableofContents

Datasheet 4 V2.3 2019-09-19 IHW30N135R3 ResonantSwitchingSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emitter voltage VCE 1350 V DCcollectorcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IC 60.0 30.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 90.0 A Non repetitive peak collector current1) ICSM 200 A TurnoffsafeoperatingareaVCE≤1350V,Tvj≤175°C - 90.0 A Diodeforwardcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IF 60.0 30.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±25 V PowerdissipationTc=25°C PowerdissipationTc=100°C Ptot 349.0 175.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+175 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Value min. typ. max. Parameter Symbol Conditions Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - - 0.43 K/W Diode thermal resistance, junction - case Rth(j-c) - - 0.43 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W 1) capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3µs

Datasheet 5 V2.3 2019-09-19 IHW30N135R3 ResonantSwitchingSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1350 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=30.0A Tvj=25°C Tvj=125°C Tvj=175°C 1.65 1.90 2.00 1.85 V Diode forward voltage VF VGE=0V,IF=30.0A Tvj=25°C Tvj=125°C Tvj=175°C 1.65 1.80 1.90 1.85 V Gate-emitter threshold voltage VGE(th) IC=0.75mA,VCE=VGE 5.1 5.8 6.4 V Zero gate voltage collector current ICES VCE=1350V,VGE=0V Tvj=25°C Tvj=175°C 100 2500 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=30.0A - 25.6 - S Integrated gate resistor rG none Ω ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 2066 - Output capacitance Coes - 67 - Reverse transfer capacitance Cres - 58 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=1080V,IC=30.0A, VGE=15V - 263.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-off delay time td(off) - 337 - ns Fall time tf - 47 - ns Turn-off energy Eoff - 1.93 - mJ Tvj=25°C, VCC=600V,IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0Ω ,RG(off)=10.0Ω , Lσ=220nH,Cσ=40pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Turn-off energy, soft switching Eoff dv/dt=150.0V/µs - 0.41 - mJ

Datasheet 6 V2.3 2019-09-19 IHW30N135R3 ResonantSwitchingSeries SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=175°C Turn-off delay time td(off) - 410 - ns Fall time tf - 100 - ns Turn-off energy Eoff - 3.50 - mJ Tvj=175°C, VCC=600V,IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0Ω ,RG(off)=10.0Ω , Lσ=220nH,Cσ=40pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Turn-off energy, soft switching Eoff dv/dt=150.0V/µs - 0.82 - mJ

Datasheet 13 V2.3 2019-09-19 IHW30N135R3 ResonantSwitchingSeries

Datasheet 14 V2.3 2019-09-19 IHW30N135R3 ResonantSwitchingSeries t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Q a Qb V (t)CE VGE(t) I (t)C V (t)CE T esting Conditions

Datasheet 15 V2.3 2019-09-19 IHW30N135R3 ResonantSwitchingSeries RevisionHistory IHW30N135R3 Revision:2019-09-19,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2012-10-12 Final data sheet 2.2 2015-01-26 Minor changes 2.3 2019-09-19 additional parameter in maximum ratings table: non repetitive peak collector current

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2019. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.