IHW30N135R3 ISC | Alldatasheet
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Technical content
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DESCRIPTION
- LowSaturationVoltage:VCE(sat)=1.85V@IC=30A
- LowSwitching Losses
- High Ruggedness,TemperatureStable Behavior
APPLICATIONS
- Inverterized Microwave Ovens
- Inductive Cooking
- ResonantConverters
- SoftSwitchingApplications ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VCES Collector-EmitterVoltage 1350 V VGES Gate-EmitterVoltage ±20 V IC CollectorCurrent-Continuous @TC=25℃ 60 A IC CollectorCurrent-Continuous @TC=100℃ 30 A ICM PulsedCollectorCurrent 90 A PD PowerDissipation@TC=25℃ 349 W Tj OperatingJunctionTemperature -40~175 ℃ Tstg StorageTemperatureRange -55~175 ℃
www.iscsemi.com 2 THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCaseperIGBT 0.43 ℃/W Rthj-c ThermalResistance,JunctiontoCaseperDiode 0.43 ℃/W STATICCHARACTERISTICS（TJ =25 °Cunlessotherwise specified） SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VCES Collector-EmitterBreakdownVoltage VGE=0V,IC=0.5mA 1350 -- -- V VGE(th) Gate-EmitterThresholdVoltage VCE=VGE,IC=0.75mA 5.1 -- 6.4 V VCE(sat) Collector-EmitterSaturationVoltage IC=30A,VCE=15V, IC=30A,VCE=15V, IC=30A,VCE=15V, ICES ZeroGateVoltageCollectorCurrent VCE=1350V,VGE=0V -- -- 100 uA IGES Gate-EmitterLeakageCurrent VGE=±20V,VCE=0V -- -- ±100 nA VF DiodeForwardVoltage IF=30A,VGE=0V -- -- 1.85 V PACKAGEOUTLINE(UNIT:mm) IC()A
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