IHW20N120R3_V01 INFINEON | Alldatasheet

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ReverseconductingIGBTwithmonolithicbodydiode IHW20N120R3 Datasheet IndustrialPowerControl

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.7 www.infineon.com 2019-09-19 IHW20N120R3 ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode Features:

  • Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly
  • TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat
  • LowEMI
  • QualifiedaccordingtoJEDECfortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications:
  • Inductivecooking
  • Inverterizedmicrowaveovens
  • Resonantconverters
  • Softswitchingapplications G C E G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IHW20N120R3 1200V 20A 1.48V 175°C H20R1203 PG-TO247-3

Datasheet 3 V2.7 2019-09-19 IHW20N120R3 ResonantSwitchingSeries TableofContents

Datasheet 4 V2.7 2019-09-19 IHW20N120R3 ResonantSwitchingSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DCcollectorcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IC 40.0 20.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A Non repetitive peak collector current1) ICSM 200 A TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 60.0 A Diodeforwardcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IF 40.0 20.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±25 V PowerdissipationTc=25°C PowerdissipationTc=100°C Ptot 310.0 155.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+175 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Value min. typ. max. Parameter Symbol Conditions Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - - 0.48 K/W Diode thermal resistance, junction - case Rth(j-c) - - 0.48 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W 1) capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3µs

Datasheet 5 V2.7 2019-09-19 IHW20N120R3 ResonantSwitchingSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=20.0A Tvj=25°C Tvj=125°C Tvj=175°C 1.48 1.70 1.80 1.70 V Diode forward voltage VF VGE=0V,IF=20.0A Tvj=25°C Tvj=125°C Tvj=175°C 1.55 1.70 1.80 1.75 V Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 5.1 5.8 6.4 V Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25°C Tvj=175°C 100 2500 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=20.0A - 18.3 - S Integrated gate resistor rG none Ω ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 1503 - Output capacitance Coes - 50 - Reverse transfer capacitance Cres - 42 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=960V,IC=20.0A, VGE=15V - 211.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-off delay time td(off) - 387 - ns Fall time tf - 25 - ns Turn-off energy Eoff - 0.95 - mJ Tvj=25°C, VCC=600V,IC=20.0A, VGE=0.0/15.0V, RG(on)=15.0Ω ,RG(off)=15.0Ω , Lσ=180nH,Cσ=39pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery.

Datasheet 6 V2.7 2019-09-19 IHW20N120R3 ResonantSwitchingSeries SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=175°C Turn-off delay time td(off) - 454 - ns Fall time tf - 84 - ns Turn-off energy Eoff - 1.65 - mJ Tvj=175°C, VCC=600V,IC=20.0A, VGE=0.0/15.0V, RG(on)=15.0Ω ,RG(off)=15.0Ω , Lσ=180nH,Cσ=39pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery.

Datasheet 13 V2.7 2019-09-19 IHW20N120R3 ResonantSwitchingSeries

Datasheet 14 V2.7 2019-09-19 IHW20N120R3 ResonantSwitchingSeries t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Q a Qb V (t)CE VGE(t) I (t)C V (t)CE T esting Conditions

Datasheet 15 V2.7 2019-09-19 IHW20N120R3 ResonantSwitchingSeries RevisionHistory IHW20N120R3 Revision:2019-09-19,Rev.2.7 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2008-05-06 - 1.2 2008-07-11 - 2.3 2008-07-29 - 2.4 2009-04-01 - 2.5 2013-02-12 Layout change 2.6 2015-01-26 Minor changes 2.7 2019-09-19 additional parameter in maximum ratings table: non repetitive peak collector current

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2019. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.