IHP10T120

IHP10T120 INFINEON | Alldatasheet

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Technical content

Power Semiconductors 1 Rev. 2 Jun-04 Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

• Short circuit withstand time – 10 µs
• Designed for : - Soft Switching Applications - Induction Heating
• Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in V CE(sat) - Very low Vce(sat)
• Very soft, fast recovery anti-parallel EmCon ™ HE diode
• Low EMI
• Application specific optimisation of inverse diode G C E Type VCE I C VCE(sat),Tj=25°C Tj,max Marking Package Ordering Code IHP10T120 1200V 10A 1.7V 150°C H10T120 TO-220-3-1 Q67040-S4650 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 24 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 24 Diode forward current TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax, Tc = 25°C IFpuls 16.5 A Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave IFSM A Gate-emitter voltage VGE ±20 V Short circuit withstand time1) VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C tSC 10 µs Power dissipation, TC = 25°C Ptot 138 W Operating junction temperature Tj -40...+150 Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 1) Allowed number of short circuits: <1000; time between short circuits: >1s. P-TO-220-3-1 (TO-220AB)

Power Semiconductors 2 Rev. 2 Jun-04 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.9 Diode thermal resistance, junction – case RthJCD 2.6 IGBT thermal resistance, junction – ambient RthJA 62 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =0.5mA 1200 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =10A Tj =25 °C Tj =125 °C Tj =150 °C 1.7 2.0 2.2 2.2 Diode forward voltage VF VGE =0V, IF =4A Tj =25 °C Tj =150 °C 1.65 1.7 2.15 Gate-emitter threshold voltage VGE(th) IC =0.6mA, VCE =VGE 5.0 5.8 6.5 V Zero gate voltage collector current ICES VCE =1200V , VGE =0V Tj =25 °C Tj =150 °C 0.2 2.0 mA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =10A - 10 - S Integrated gate resistor RGint none Ω

Power Semiconductors 3 Rev. 2 Jun-04 Dynamic Characteristic Input capacitance Ciss - 606 - Output capacitance Coss - 48 - Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 29 - pF Gate charge QGate VCC =960V, IC =10A VGE =15V - 53 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - - 13 nH Short circuit collector current1) IC(SC) VGE =15V, tSC ≤ 10 µ s VCC = 600V, Tj = 25 °C - 48 - A Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 45 - Rise time tr - 20 - Turn-off delay time td(off) - 520 - Fall time tf - 82 - ns Turn-on energy Eon - 0.68 - Turn-off energy Eoff - 0.78 - Total switching energy Ets Tj =25 °C, VCC =610V, IC =10A, VGE = 0/15V, RG =81 Ω , Lσ 2) =180nH, Cσ 2) =39pF Energy losses include “tail” and diode reverse recovery. - 1.46 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 115 - ns Diode reverse recovery charge Qrr - 330 nC Diode peak reverse recovery current Irrm Tj =25 °C, VR =800V, I F =4A, di F /dt =750A/ µ s - 7.15 A 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

Power Semiconductors 4 Rev. 2 Jun-04 Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 45 - Rise time tr - 24 - Turn-off delay time td(off) - 592 - Fall time tf - 177 - ns Turn-on energy Eon - 0.83 - Turn-off energy Eoff - 1.19 - Total switching energy Ets Tj =150 °C, VCC =610V, IC =10A, VGE = 0 /15V, RG = 81 Ω Lσ 1) =180nH, Cσ 1) =39pF Energy losses include “tail” and diode reverse recovery. - 2.02 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 185 - ns Diode reverse recovery charge Qrr - 630 - nC Diode peak reverse recovery current Irrm Tj =150 °C VR =800V, I F =4A, di F /dt =750A/ µ s - 8.1 - A 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

Power Semiconductors 12 Rev. 2 Jun-04 dimensions symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 TO-220AB

Power Semiconductors 13 Rev. 2 Jun-04 Figure A. Definition of switching times Figure B. Definition of switching losses I rrm 90% I rrm 10% I rrm di /dt F t rr I F i,v tQS QF tS tF V R di /dt rr Q= Q Q rr S F t= t trr S F + Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity Cσ =39pF.

Power Semiconductors 14 Rev. 2 Jun-04 Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.