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Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1 www.infineon.com 2020-07-10 IHFW40N65R5S TRENCHSTOPTM5AdvancedIsolation Reverse-ConductingIGBTinTRENCHSTOPTM5technologywithmonolithic bodydiodeinfullyisolatedpackage FeaturesandBenefits: TRENCHSTOPTM5technologyoffering

  • Best-in-Classefficiencyinhardswitchingandresonant topologies
  • PlugandplayreplacementofpreviousgenerationIGBTs
  • 650Vbreakdownvoltage
  • LowgatechargeQG
  • Verysoft,fastrecoveryantiparalleldiode
  • Maximumjunctiontemperature175°C
  • 2500VRMSelectricalisolation,50/60Hz,t=1min
  • 100%testedisolatedmountingsurface
  • Pb-freeleadplating;RoHScompliant
  • CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ PotentialApplications:
  • Inductioncooking
  • Inverterizedmicrowaveovens
  • Resonantconverters ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 G C E Fully isolated package TO-247 KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IHFW40N65R5S 650V 40A 1.5V 175°C H40ER5S PG-HSIP247-3-2

Datasheet 2 V2.1 2020-07-10 IHFW40N65R5S TRENCHSTOPTM5AdvancedIsolation TableofContents

Datasheet 3 V2.1 2020-07-10 IHFW40N65R5S TRENCHSTOPTM5AdvancedIsolation MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax Th=25°C Th=65°C Th=65°C IC 61.0 49.0 52.01) A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs - 120.0 A Diodeforwardcurrent,limitedbyTvjmax Th=25°C Th=65°C IF 44.0 40.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTh=25°C PowerdissipationTh=65°C Ptot 108.0 79.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm IsolationvoltageRMS,f=50/60Hz,t=1min2) Visol 2500 V ThermalResistance Value min. typ. max. Parameter Symbol Conditions Unit RthCharacteristics IGBT thermal resistance,3) junction - heatsink Rth(j-h) - 1.19 1.39 K/W Diode thermal resistance,3) junction - heatsink Rth(j-h) - 3.32 3.90 K/W Thermal resistance junction - ambient Rth(j-a) - - 65 K/W 1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 0.9 W/mK, standard polyimide based reinforced carrier insulator 2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing. 3) At force on body F = 500N, Ta = 25ºC

Datasheet 4 V2.1 2020-07-10 IHFW40N65R5S TRENCHSTOPTM5AdvancedIsolation ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 650 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=40.0A Tvj=25°C Tvj=175°C 1.50 1.85 2.00 V Diode forward voltage VF VGE=0V,IF=40.0A Tvj=25°C Tvj=175°C 2.00 2.60 2.40 V Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE 3.2 4.0 4.8 V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C 1000 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=40.0A - 88.0 - S ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 3428 - Output capacitance Coes - 34 - Reverse transfer capacitance Cres - 13 - VCE=25V,VGE=0V f=1000kHz pF Gate charge QG VCC=520V,IC=40.0A, VGE=15V - 142.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) - 44 - ns Rise time tr - 38 - ns Turn-off delay time td(off) - 363 - ns Fall time tf - 27 - ns Turn-on energy Eon - 1.52 - mJ Turn-off energy Eoff - 0.70 - mJ Total switching energy Ets - 2.22 - mJ Tvj=25°C, VCC=400V,IC=40.0A, VGE=0.0/15.0V, RG(on)=23.1Ω ,RG(off)=23.1Ω , Lσ=40nH,Cσ=50pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery.

Datasheet 5 V2.1 2020-07-10 IHFW40N65R5S TRENCHSTOPTM5AdvancedIsolation DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr - 103 - ns Diode reverse recovery charge Qrr - 2.48 - µC Diode peak reverse recovery current Irrm - 39.0 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -1493 - A/µs Tvj=25°C, VR=400V, IF=40.0A, diF/dt=900A/µs SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) - 40 - ns Rise time tr - 39 - ns Turn-off delay time td(off) - 424 - ns Fall time tf - 30 - ns Turn-on energy Eon - 1.64 - mJ Turn-off energy Eoff - 0.86 - mJ Total switching energy Ets - 2.50 - mJ Tvj=150°C, VCC=400V,IC=40.0A, VGE=0.0/15.0V, RG(on)=23.1Ω ,RG(off)=23.1Ω , Lσ=40nH,Cσ=50pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=150°C Diode reverse recovery time trr - 149 - ns Diode reverse recovery charge Qrr - 4.49 - µC Diode peak reverse recovery current Irrm - 51.0 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -905 - A/µs Tvj=150°C, VR=400V, IF=40.0A, diF/dt=900A/µs

Figure 25. Typicaldiodeforwardvoltageasafunction

Datasheet 13 V2.1 2020-07-10 IHFW40N65R5S TRENCHSTOPTM5AdvancedIsolation REVISION 28.06.2019 ISSUE DATE EUROPEAN PROJECTION SCALE 8mm PG-HSIP247-3-2 DOCUMENT NO. Z8B00195711 b D c E e L P A DIMENSIONS 2.662.16 5.44 22.70 0.50 1.10 15.70 2.26 3.50 18.01 16.96 1.30 0.70 22.90 3.70 2.46 18.21 15.90 17.16 MILLIMETERS MIN. 4.70 MAX. 5.18 4.90 3:1 2 3 4 5 6 7 A3 0.280.20 E1 13.68 13.88 P1 5.70 5.90 A4 1.501.30 A5 0.510.31 A6 1.901.70 A7 (0.25) b3 0.15 (2.88) (1.60) D2 2.34 2.54 D3 0.30 D4 4.35 4.55 D5 19.70 19.90 DIMENSIONS MILLIMETERS MIN. MAX. E2 (6.00) E3 3.24 3.44 (1.45)E5 4.39 4.59 E6 0.76 0.96 L2 1.50 1.70 Q 6.06 6.26

Datasheet 14 V2.1 2020-07-10 IHFW40N65R5S TRENCHSTOPTM5AdvancedIsolation t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Q a Qb V (t)CE VGE(t) I (t)C V (t)CE T esting Conditions

Datasheet 15 V2.1 2020-07-10 IHFW40N65R5S TRENCHSTOPTM5AdvancedIsolation RevisionHistory IHFW40N65R5S Revision:2020-07-10,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2020-05-07 Preliminary Data Sheet 2.1 2020-07-10 Final data sheet

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