IH401A INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • Switching Times (RL = 1kΩ )
  • Charge Injection Error (Typ) into 0.01µF Capacitor . . 3mV
  • Can Be Used for Hybrid Construction

Description

The IH401A is made up of 4 monolithically constructed combinations of varacitor type diode and a N-Channel JFET. The JFET itself is very similar to the popular 2N4391, and the driver diode is specially designed, such that its capacitance is a strong function of the voltage across it. The driver diode is electrically in series with the gate of the N-Channel FET and simulates a back-to-back diode structure. This structure is needed to prevent forward biasing the source-to-gate or drain-to-gate junctions of the JFET when used in switching applications. Previous applications of JFETs required the addition of diodes, in series with the gate, and then perhaps a gate-to- source referral resistor or a capacitor in parallel with the diode; therefore, at least 3 components were required to perform the switch function. The IH401A does this same job in one component (with a great deal better performance characteristics). Like a standard JFET, the practically perform a solid state switch function translator should be added to drive the diode. This translator takes the TTL levels and converts them to voltages required to drive the diode/FET system (typically a 0V to -15V translation and a 3V to +15V shift). With±15V power supplies, the IH401A will typically switch 22V P-P at any frequency from DC to 20MHz, with less than 50Ω rDS(ON) . Pinout IH401A (CERDIP) TOP VIEW Part Number Information PART NUMBER TEMP. RANGE (oC) PACKAGE IH401A -55 to 125 16 Ld CERDIP D 1 DR 1 DR 2 D 2 D 4 DR 4 DR 3 D 3 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © Harris Corporation 1999 File Number 3128.2 OBSOLETE PRODUCT NO RECOMMENDED REPLA CEMENT Call Central Applications 1-800-442-7747or email: centapp@harris.com

Absolute Maximum Ratings Thermal Information Supply Voltage Operating Conditions CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical SpecificationsAt 25oC/125oC PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Switch “ON” Resistance r DS(ON) VDRIVE = 15V, VDRAIN = -10V, ID = 10mA -3 5 5 0 Ω Pinch-Off Voltage V P ID = 1nA, VDS = 10V 2 4 5 V Switch “OFF” Current or “OFF” Leakage I D(OFF) VDRIVE = -15V, VSOURCE = -10V, VDRAIN = +10V -1 0 ±500 pA Switch “OFF” Leakage at 125oCI D(OFF) VDRIVE = -15V, VSOURCE = -10V, VDRAIN = +10V - 0.25 50 nA Switch “OFF” Current I S(OFF) VDRIVE = -15V, VDRAIN = -10V, VSOURCE = +10V -1 0 ±500 pA Switch “OFF” Leakage at 125oCI S(OFF) VDRIVE = -15V, VSOURCE = -10V, VDRAIN = +10V - 0.3 50 nA Switch Leakage When Turned “ON” I D(ON) = IS(ON) VD = VS = -10V, VDRIVE = +15V - 0.02 ±2n A AC Input Voltage Range without Distortion VANALOG See Figure 2 20 22 - V P-P Charge Injection Amplitude V INJECT See Figure 3 - 3 - mV P-P Diode Reverse Breakdown Voltage. This Correlates to Overvoltage Protection BV DIODE VD = VS = -V, IDRIVE = 1µA, DRIVE = 0V -30 -45 - V Gate to Source or Gate to Drain Reverse Breakdown Voltage BV GSS VDRIVE = -V, VD = VS = 0V, DRIVE = 1µA 30 41 - V Maximum Current Switch can Deliver (Pulsed) IDSS VDRIVE = 15V, VS = 0V, D = +10V 35 55 - mA Switch “ON” Time (Note 1) t ON See Figure 1 - 50 - ns Switch “OFF” Time (Note 1) t OFF See Figure 1 - 150 - ns NOTE: 1. Driving waveform must be >100ns rise and fall time. IH401A